Peter Gnauck

New crossbeam inspection tool combining an ultrahigh-resolution field emission SEM and a high-resolution FIB

The combination of field emission scanning electron microscopy (FESEM) and focused ion beam (FIB) is a future key technology for semiconductor and material science related applications. A new CrossBeam tool is discussed in this presentation. Through the combination of the well known Gemini ultrahigh resolution field emission SEM column and the well known Canion31 + high performance FIB column a wide field of applications can now be accessed. This includes structural cross-sections for SEM and transmission electron microscopy (TEM) applications, device modification, failure analysis, sublayer measurement and examination, as well as SEM and FIB related analytical techniques such as energy dispersive x-ray spectroscopy (EDS), wavelength dispersive x-ray spectroscopy (WDS), secondary ion mass spectrometry (SIMS) etc. Real time high resolution SEM imaging of the cutting and deposition process enables the researcher to perform very accurate three dimensional structural examinations and device modifications.

A new SEM/FIB crossbeam inspection tool for high-resolution materials and device characterization

High resolution investigation of the microstructure of materials and devices is very often restricted to the study of the very surface of the sample. This is because most high resolution analytical and imaging techniques like scanning electron microscopy (SEM), atomic force microscopy (AFM) or scanning tunnelling microscopy (STM) only provide information about the surface microstructure of the sample. To locally investigate the internal microstructure of the sample at high resolution, the sample has to be opened up. This can be done very precisely by the use of a focused ion beam (FIB) for cutting into the sample and the use of a field emission SEM for high resolution imaging of the internal structure. The combination of FESEM and FIB is a future key technology for semiconductor and material science related applications. A new CrossBeam tool is discussed in this presentation. Through the combination of the well known Gemini ultrahigh resolution field emission SEM column and the well known Canion31+ high performance FIB column a wide field of applications can now be accessed. This includes structural cross-sections for SEM and TEM applications, device modification, failure analysis, sublayer measurement and examination, as well as SEM and FIB related analytical techniques such as EDS, WDS, SIMS etc. Real time high resolution SEM imaging of the cutting and deposition process enables the researcher to perform very accurate three dimensional structural examinations and device modifications.

CrossBeam, Principles and Application

The use of the focused ion beam (FIB) systems has increased to a high level in recent years [1]. The imaging, milling, and deposition capabilities of the FIB make it the ideal instrument for e. g. site-specific failure analysis, specimen preparation and nano-machining. Ion channelling contrast allows for selective imaging of polycrystalline and poly-phase microstructures. In addition, the FIB and CrossBeam® instruments are unique stand-alone analytical tools. Their vast capabilities have enabled numerous applications into the semiconductor and materials sciences applications. These integrated CrossBeam® Tools enable the observation and direct control of the FIB operation in real time. In addition to the improved accuracy and resolution the electron beam adds analytical capabilities as STEM, EDS and EBSP to the instruments.

High Resolution Live Imaging of FIB Milling Processes for Optimum Accuracy

The combination of field emission scanning electron microscopy (FESEM) and focused ion beam (FIB) is a future key technology for semiconductor and materials science related applications. Through the combination of the Gemini ultrahigh resolution field emission SEM column and the Canion31+ high performance FIB column a wide field of applications can be accessed. This includes structural cross-sections for SEM and transmission electron microscopy (TEM) applications, device modification, failure analysis, sublayer measurement and examination, as well as SEM and FIB related analytical techniques such as energy dispersive x-ray spectroscopy (EDS), wavelength dispersive x-ray spectroscopy (WDS), secondary ion mass spectrometry (SIMS) etc. Real time high resolution SEM imaging of the cutting and deposition process enables the researcher to perform very accurate three dimensional structural examinations and device modifications.