Peter J. Schlosser

InP/AlGaInP quantum dot semiconductor disk lasers for CW TEM00 emission at 716-755nm

Multiple layers of InP QDs, self-assembled during epitaxial growth, were incorporated into the active region of an (Al(x)Ga(1-x))(0.51)In(0.49)P based semiconductor disk laser with monolithic Al(x)Ga(1-x)As distributed Bragg reflector. Three gain structure samples were selected from the epitaxial wafer, bonded to single-crystal diamond heatspreaders and optically pumped at 532 nm within a high finesse external laser cavity. Laser emission with peak wavelengths at 716, 729, and 739 nm, respectively, was achieved from the three samples; the latter demonstrating tuning from 729 to 755 nm. Maximum continuous wave output power of 52 mW at 739 nm was achieved with 0.2% output coupling; the threshold and slope efficiency were 220 mW and 5.7% respectively.

Hybrid GaN LED with capillary-bonded II–VI MQW color-converting membrane for visible light communications

The rapid emergence of gallium-nitride (GaN) light-emitting diodes (LEDs) for solid-state lighting has created a timely opportunity for optical communications using visible light. One important challenge to address this opportunity is to extend the wavelength coverage of GaN LEDs without compromising their modulation properties. Here, a hybrid source for emission at 540 nm consisting of a 450 nm GaN micro-sized LED (micro-LED) with a micron-thick ZnCdSe/ZnCdMgSe multi-quantum-well color-converting membrane is reported. The membrane is liquid-capillary-bonded directly onto the sapphire window of the micro-LED for full hybridization. At an injection current of 100 mA, the color-converted power was found to be 37 μW. At this same current, the −3 dB optical modulation bandwidth of the bare GaN and hybrid micro-LEDs were 79 and 51 MHz, respectively. The intrinsic bandwidth of the color-converting membrane was found to be power-density independent over the range of the micro-LED operation at 145 MHz, which corresponds to a mean carrier lifetime of 1.9 ns.

Passive Mode-Locking of a Ti : Sapphire Laser by InGaP Quantum-Dot Saturable Absorber

We demonstrate the use of a novel InGaP quantum-dot (QD) saturable absorber (SA) to induce passively mode-locked (ML) operation of a Ti : sapphire laser. Pulses as short as 518 fs are obtained at 752 nm with an average output power of up to 190 mW for 2.3 W of absorbed pump power at 532 nm. The absorption recovery of the SA is characterized by two decay coefficients: a fast and a slow component having time constants of 0.4 and 300 ps, respectively. The saturation fluence of the InGaP QDs was measured to be 28 ¿J/cm2, the initial low-signal absorption was 1.5%, where 1.15% was nonsaturable loss.

Frequency stabilization of an ultraviolet semiconductor disk laser

We report a tunable, narrow-linewidth UV laser based on intracavity second-harmonic generation in a red semiconductor disk laser. Single-frequency operation is demonstrated with a total UV output power of 26 mW. By servo-locking the fundamental frequency to a reference Fabry-Pérot cavity, the linewidth of the UV beam has been reduced to 16 kHz on short timescales and 50 kHz on a 1 s timescale, relative to the reference.

Singly-resonant sum frequency generation of visible light in a semiconductor disk laser

In this paper a generic approach for visible light generation is presented. It is based on sum frequency generation between a semiconductor disk laser and a solid-state laser, where the frequency mixing is achieved within the cavity of the semiconductor disk laser using a single-pass of the solid-state laser light. This exploits the good beam quality and high intra-cavity power present in the semiconductor disk laser to achieve high conversion efficiency. Combining sum frequency mixing and semiconductor disk lasers in this manner allows in principle for generation of any wavelength within the visible spectrum, by appropriate choice of semiconductor material and single-pass laser wavelength.

Intracavity Raman conversion of a red semiconductor disk laser using diamond

We demonstrate a diamond Raman laser intracavity-pumped by a red semiconductor disk laser (~675 nm) for laser emission at around 740 nm. Output power up to 82 mW of the Stokes-shifted field was achieved, limited by the available pump power, with an output coupling of 1.5%. We also report wavelength tuning of the diamond Raman laser over 736 - 750 nm.

Characterisation of an InAs quantum dot semiconductor disk laser

We report the performance of a 1030 nm semiconductor disk laser with gain region consisting of multiple sub-monolayers of InAs/GaAs quantum dots. Maximum output power of 512 mW was achieved with 20% slope efficiency.

Vibration-tolerant narrow-linewidth semiconductor disk laser using novel frequency-stabilisation schemes

This paper will present developments in narrow-linewidth semiconductor-disk-laser systems using novel frequencystabilisation schemes for reduced sensitivity to mechanical vibrations, a critical requirement for mobile applications. Narrow-linewidth single-frequency lasers are required for a range of applications including metrology and highresolution spectroscopy. Stabilisation of the laser was achieved using a monolithic fibre-optic ring resonator with free spectral range of 181 MHz and finesse of 52 to act as passive reference cavity for the laser. Such a cavity can operate over a broad wavelength range and is immune to a wide band of vibrational frequency noise due to its monolithic implementation. The frequency noise of the locked system has been measured and compared to typical Fabry-Perotlocked lasers using vibration equipment to simulate harsh environments, and analysed here. Locked linewidths of < 40 kHz have been achieved. These developments offer a portable, narrow-linewidth laser system for harsh environments that can be flexibly designed for a range of applications.

Narrow linewidth ultraviolet semiconductor disk laser

Here we combine active stabilisation of an AlGaInP-based red semiconductor disk laser (SDL) with intracavity frequency doubling in the same cavity in order to achieve narrow linewidth, <;25 kHz, and tuning at the second harmonic. As compared to other frequency stabilised UV laser systems which require successive external enhancement cavities, each with separate stabilisation, we benefit here from a much simpler setup thanks to the short fundamental wavelength which allows direct intracavity doubling to the UV.

Semiconductor disk lasers incorporating InP/GaInP quantum dots for 716-755nm emission

We report demonstration of semiconductor disk lasers based on InP/GaInP quantum dots for TEM00 emission from 716-755nm, and up to 25nm tuning from a single source. Maximum output power of 52mW was achieved at 739nm.