Alan J. Kemp

Thermal management in vertical-external-cavity surface-emitting lasers: finite-element analysis of a heatspreader approach

The use of crystalline heatspreaders to improve thermal management in optically pumped vertical-external-cavity surface-emitting lasers is studied via finite-element analysis. The required properties of a heatspreader are examined and the effect on heat flow is discussed, as are thermal lensing effects. The advantages of diamond heatspreaders are highlighted. The power-scaling potential is compared to other approaches. Heatspreaders are found to be promising, particularly for use with low thermal conductivity semiconductors.

Tunable ultraviolet output from an intracavity frequency-doubled red vertical-external-cavity surface-emitting laser

An optically pumped red vertical-external-cavity surface-emitting laser with an AlInGaP gain region produced more than 1W of continuous-wave output power at a wavelength of 675nm. Frequency doubling in a beta-barium borate crystal placed at an intracavity beam waist generated 120mW of total output power at 338nm. Using an intracavity birefringent filter a second harmonic tuning range of ∼5nm was achieved.

Directly diode-laser-pumped Ti:sapphire laser

A directly diode-laser-pumped Ti:Al(2)O(3) laser is demonstrated. Using a 1 W, 452 nm GaN diode laser, 19 mW of cw output power is achieved in a potentially portable format. Pumping at this short wavelength induces a loss at the laser wavelength that is not seen for the more typical green pump wavelengths. This effect is characterized and discussed.

Thermal Management in 2.3-

Finite element analysis is used to study heat flow in a 2.3-mum semiconductor disk laser (or vertical-external-cavity surface-emitting laser) based on GalnAsSb-AlGaAsSb. An intra-cavity diamond heatspreader is shown to significantly improve thermal management-and hence power scalability-in this laser compared to the substrate thinning approach typically used in semiconductor disk lasers operating around 1 mum. The parameters affecting the performance of an intracavity heat-spreader are studied in the context of a 2.3-mum semiconductor disk laser: the thermal impedance at the interface between the semiconductor gain material and the heatspreader is found to be much more important than the mounting arrangements for the gain-heatspreader composite; power scaling with pump spot radius-increasing the pump power at constant pump intensity-is found to be intrinsically limited; and the pump wavelength is predicted to have less affect on thermal management than might be expected. Direct pumping of the quantum wells is found to significantly reduce the temperature rise per unit pump power.

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The semiconductor disk laser (SDL) is a versatile laser source offering multiwatt-level output powers and diffraction limited beams. While an approach to thermal management based on substrate removal has led to tens of watts of output power in the 1 μm region, the use of intracavity diamond heatspreaders for thermal management has enabled multiwatt performance levels to be achieved at wavelengths from the red to the mid-infrared. The modeling presented indicates that this dichotomy in approach arises from the ability of the heatspreader approach to bypass the thermal resistance of the mirror structure built into the SDL. The power scaling limitations of SDLs with heatspreaders are explored: nonaxial heat flow in the heatspreader is shown to limit the power scaling with pump spot radius. The critical roles of the pump spot size and output coupling on efficiency are experimentally investigated. An output power of 7 W in a 1060 nm SDL is achieved with the maximum output power achieved at a pump spot radius of 85 μm.

Semiconductor Disk Lasers: A Finite Element Analysis

The intracavity use of newly developed low-birefringence synthetic diamond for thermal management in compact solid-state lasers is examined both experimentally and theoretically. A comparison - using single-crystal natural diamond as a base line - is made between synthetic, single-crystal diamond types: chemical vapor deposition and high pressure/high temperature grown diamond. The synthetic diamond samples are shown to possess significantly lower birefringence than often occurs in natural single-crystal diamond while maintaining the excellent thermal management properties and low insertion loss of natural diamond. Low threshold, high efficiency laser operation is demonstrated in polarization sensitive cavities incorporating intracavity synthetic diamond using both doped-dielectric and semiconductor gain elements. In addition, finite element analysis is used to demonstrate the potential of diamond to reduce thermal distortion and stress in doped-dielectric disk lasers. A 15 W Nd:GdVO4 disk laser utilizing diamond is demonstrated. These results highlight the potential of low birefringence synthetic diamond for intracavity thermal management applications in solid-state lasers.

Limits on efficiency and power scaling in semiconductor disk lasers with diamond heatspreaders

A continuous-wave diamond Raman laser is demonstrated with an output power of 5.1 W at 1217 nm. This Raman laser is intracavity pumped by a side-pumped Nd:YLF rod laser: a 43-fold brightness enhancement between the Nd:YLF and diamond Raman lasers is observed, with the M2 beam propagation factor of the diamond Raman laser measured to be <; 1.2. Although higher output powers are demonstrated in a similar configuration using KGd(WO4)2 (KGW) as the Raman laser material (6.1 W), the brightness enhancement is much lower (2.5 fold) due to the poorer beam quality of the KGW Raman laser (M2 <; 6). The Raman gain coefficient of single-crystal synthetic diamond at a pump wavelength of 1064-nm is also measured: a maximum value of 21±2 cm/GW is returned compared to 5.7±0.5 cm/GW for KGW at the same wavelength.

Synthetic Diamond for Intracavity Thermal Management in Compact Solid-State Lasers

Direct diode-laser pumping of a mode-locked Ti:Al(2)O(3) laser is reported. A single 1 W GaN-based diode laser operating at 452 nm is used as the pump laser. Pulse durations as short as 114 fs and average output powers of up to 13 mW are obtained.

Characterization of Single-Crystal Synthetic Diamond for Multi-Watt Continuous-Wave Raman Lasers

The birefringence of a number of commercially-available diamond platelets is assessed in the context of their use for intracavity thermal management in lasers. Although diamond is normally thought of as isotropic, significant birefringence is found to be present in some samples, with considerable variation from batch to batch, and in some cases across an individual sample. Nonetheless, low-loss operation is achieved in a laser cavity containing a Brewster element, either by rotating the sample or by using a diamond platelet with low birefringence.

Direct diode-laser pumping of a mode-locked Ti:sapphire laser

Guiding of the transverse mode in Nd:YVO/sub 4/ microchip lasers is examined both experimentally and theoretically at pump powers well above threshold. It is found that thermal changes in the cavity geometry induced by intense diode pumping can be well understood using a simple model. However, an understanding of these effects is not sufficient to explain the nature of the transverse mode. Gain-related guiding effects are found to play an important role even at pump powers well above threshold. For a 0.5-mm-thick microchip laser, a difference of around 30% is observed between the minimum beam waist expected due to thermal guiding and the measured beam waist. The gain-related effects are described theoretically and their importance is demonstrated experimentally.