Peter Kiss
LSI Corporation
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Publication
Featured researches published by Peter Kiss.
wireless and microwave technology conference | 2013
Taesong Hwang; Jenshan Lin; Kamran Azadet; Ross S. Wilson; Peter Kiss; Said E. Abdelli; Donald R. Laturell
A GaN HEMT class-F power amplifier (PA) achieving a high maximum power added efficiency (PAE) is presented. The class-F PA exhibits maximum PAE of 80.1 % with an output power of 40.7 dBm at 2 GHz. The PA maintains PAE higher than 50% at 6-dB input back off. The PA shows PAE higher than 70% over 200-MHz frequency range from 1.9 GHz to 2.1 GHz. Source-pull and load-pull techniques in largesignal analysis were conducted to achieve optimum impedance terminations at fundamental and harmonics.
Archive | 2013
Ross S. Wilson; Said E. Abdelli; Peter Kiss; Donald R. Laturell; James F. MacDonald
Archive | 2012
Ross S. Wilson; Said E. Abdelli; Peter Kiss; Kameran Azadet; Donald R. Laturell; James F. MacDonald
Archive | 2013
Donald R. Laturell; Said E. Abdelli; Peter Kiss; James F. MacDonald; Ross S. Wilson
Archive | 2013
Ross S. Wilson; James F. MacDonald; Peter Kiss; Donald R. Laturell; Said E. Abdelli
Archive | 2013
Peter Kiss; Said E. Abdelli; Donald R. Laturell; James F. MacDonald; Steven C. Pinault; Ross S. Wilson
Archive | 2013
Ross S. Wilson; Said E. Abdelli; Peter Kiss; Donald R. Laturell; Kameran Azadet; James F. MacDonald
Archive | 2012
Donald R. Laturell; Said E. Abdelli; Peter Kiss; James F. MacDonald; Ross S. Wilson; Kameran Azadet
Archive | 2014
Peter Kiss; Said E. Abdelli; Donald R. Laturell; Ross S. Wilson; James F. MacDonald
Archive | 2014
Ross S. Wilson; Said E. Abdelli; Peter Kiss; Donald R. Laturell; James F. MacDonald
