Peter Reininger

Monolithically integrated mid-infrared lab-on-a-chip using plasmonics and quantum cascade structures

The increasing demand of rapid sensing and diagnosis in remote areas requires the development of compact and cost-effective mid-infrared sensing devices. So far, all miniaturization concepts have been demonstrated with discrete optical components. Here we present a monolithically integrated sensor based on mid-infrared absorption spectroscopy. A bi-functional quantum cascade laser/detector is used, where, by changing the applied bias, the device switches between laser and detector operation. The interaction with chemicals in a liquid is resolved via a dielectric-loaded surface plasmon polariton waveguide. The thin dielectric layer enhances the confinement and enables efficient end-fire coupling from and to the laser and detector. The unamplified detector signal shows a slope of 1.8–7 μV per p.p.m., which demonstrates the capability to reach p.p.m. accuracy over a wide range of concentrations (0–60%). Without any hybrid integration or subwavelength patterning, our approach allows a straightforward and cost-saving fabrication.

Detectivity enhancement in quantum well infrared photodetectors utilizing a photonic crystal slab resonator.

We characterize the performance of a quantum well infrared photodetector (QWIP), which is fabricated as a photonic crystal slab (PCS) resonator. The strongest resonance of the PCS is designed to coincide with the absorption peak frequency at 7.6 µm of the QWIP. To accurately characterize the detector performance, it is illuminated by using single mode mid-infrared lasers. The strong resonant absorption enhancement yields a detectivity increase of up to 20 times. This enhancement is a combined effect of increased responsivity and noise current reduction. With increasing temperature, we observe a red shift of the PCS-QWIP resonance peak of -0.055 cm(-1)/K. We attribute this effect to a refractive index change and present a model based on the revised plane wave method.

Diagonal-transition quantum cascade detector

We demonstrate the concept of diagonal transitions for quantum cascade detectors (QCD). Different to standard, vertical QCDs, here the active transition takes place between two energy levels in adjacent wells. Such a scheme has versatile advantages. Diagonal transitions generally yield a higher extraction efficiency and a higher resistance than vertical transitions. This leads to an improved overall performance, although the absorption strength of the active transition is smaller. Since the extraction is not based on resonant tunneling, the design is more robust, with respect to deviations from the nominal structure. In a first approach, a peak responsivity of 16.9 mA/W could be achieved, which is an improvement to the highest shown responsivity of a QCD for a wavelength of 8 μm at room-temperature by almost an order of magnitude.

A bi-functional quantum cascade device for same-frequency lasing and detection

We demonstrate a bi-functional quantum cascade device that detects at the same wavelength as it coherently emits. Our fabricated device operates at room-temperature with a pulsed peak power emission of 45 mW and a detector responsivity of 3.6 mA/W. We show how to compensate the intrinsic wavelength mismatch between the laser and the detector, based on a bound-to-continuum design. An overlap between the laser and the detector spectra was observed from 6.4 μm to 6.8 μm. The electro-luminescence spectrum almost perfectly matches the detector spectrum, overlapping from 6.2 μm to 7.1 μm.

InAs/AlAsSb based quantum cascade detector

In this letter, we introduce the InAs/AlAsSb material system for quantum cascade detectors (QCDs). InAs/AlAsSb can be grown lattice matched to InAs and exhibits a conduction band offset of approximately 2.1 eV, enabling the design of very short wavelength quantum cascade detectors. Another benefit using this material system is the low effective mass of the well material that improves the total absorption of the detector and decreases the intersubband scattering rates, which increases the device resistance and thus enhances the noise behavior. We have designed, grown, and measured a QCD that detects at a wavelength of λ = 4.84 μm and shows a peak specific detectivity of approximately 2.7 × 107 Jones at T = 300 K.

Monolithically Integrated Mid-Infrared Quantum Cascade Laser and Detector

We demonstrate the monolithic integration of a mid-infrared laser and detector utilizing a bi-functional quantum cascade active region. When biased, this active region provides optical gain, while it can be used as a detector at zero bias. With our novel approach we can measure the light intensity of the laser on the same chip without the need of external lenses or detectors. Based on a bound-to-continuum design, the bi-functional active region has an inherent broad electro-luminescence spectrum of 200 cm⁻¹, which indicates its use for single mode laser arrays. We have measured a peak signal of 191.5 mV at the on-chip detector, without any amplification. The room-temperature pulsed emission with an averaged power consumption of 4 mW and the high-speed detection makes these devices ideal for low-power sensors. The combination of the on-chip detection functionality, the broad emission spectrum and the low average power consumption indicates the potential of our bi-functional quantum cascade structures to build a mid-infrared lab-on-a-chip based on quantum cascade laser technology.

Plasmonic lens enhanced mid-infrared quantum cascade detector

We demonstrate monolithic integrated quantum cascade detectors enhanced by plasmonic lenses. Surface normal incident mid-infrared radiation is coupled to surface plasmon polaritons guided to and detected by the active region of the detector. The lens extends the optical effective active area of the device up to a 5 times larger area than for standard mesa detectors or pixel devices while the electrical active region stays the same. The extended optical area increases the absorption efficiency of the presented device as well as the room temperature performance while it offers a flexible platform for various detector geometries. A photocurrent response increase at room temperature up to a factor of 6 was observed.

Photonic crystal slab quantum cascade detector

In this Letter, we demonstrate the design, fabrication, and characterization of a photonic crystal slab quantum cascade detector (PCS-QCD). By employing a specifically designed resonant cavity, the performance of the photodetector is improved in three distinct ways. The PCS makes the QCD sensitive to surface normal incident light. It resonantly enhances the photon lifetime inside the active zone, thus increasing the photocurrent significantly. And, the construction form of the device inherently decreases the noise. Finally, we compare the characteristics of the PCS-QCD to a PCS - quantum well infrared photodetector and outline the advantages for certain fields of applications.

High performance bi-functional quantum cascade laser and detector

An improved bi-functional quantum cascade laser and detector emitting and detecting around 6.8 μm is demonstrated. The design allows a significantly higher laser performance, showing that bi-functional designs can achieve a comparable pulsed performance to conventional quantum cascade lasers. In particular, the device has a threshold current density of 3 kA/cm2, an output power of 0.47 W, and a total wall-plug efficiency of 4.5% in pulsed mode. Optimized electron extraction and the prevention of thermal backfilling allow higher duty cycles, operation up to 10%, with 15 mW average output power at room temperature without optimization of the laser cavity or coatings. At zero bias, the device has a responsivity of around 40 mA/W and a noise equivalent power of 80 pW/Hz at room temperature, which in on-chip configuration outperforms conventional uncooled discrete detectors.

4.3 μm quantum cascade detector in pixel configuration.

We present the design simulation and characterization of a quantum cascade detector operating at 4.3μm wavelength. Array integration and packaging processes were investigated. The device operates in the 4.3μm CO2 absorption region and consists of 64 pixels. The detector is designed fully compatible to standard processing and material growth methods for scalability to large pixel counts. The detector design is optimized for a high device resistance at elevated temperatures. A QCD simulation model was enhanced for resistance and responsivity optimization. The substrate illuminated pixels utilize a two dimensional Au diffraction grating to couple the light to the active region. A single pixel responsivity of 16mA/W at room temperature with a specific detectivity D* of 5⋅107 cmHz/W was measured.