Tobias Zederbauer

High power terahertz quantum cascade lasers with symmetric wafer bonded active regions

We increased the active region/waveguide thickness of terahertz quantum cascade lasers with semi-insulating surface plasmon waveguides by stacking two symmetric active regions on top of each other, via a direct wafer bonding technique. In this way, we enhance the generated optical power in the cavity and the mode confinement. We achieved 470 mW peak output power in pulsed mode from a single facet at a heat sink temperature of 5 K and a maximum operation temperature of 122 K. Furthermore, the devices show a broad band emission spectrum over a range of 420 GHz, centered around 3.9 THz.

Probing scattering mechanisms with symmetric quantum cascade lasers.

A characteristic feature of quantum cascade lasers is their unipolar carrier transport. We exploit this feature and realize nominally symmetric active regions for terahertz quantum cascade lasers, which should yield equal performance with either bias polarity. However, symmetric devices exhibit a strongly bias polarity dependent performance due to growth direction asymmetries, making them an ideal tool to study the related scattering mechanisms. In the case of an InGaAs/GaAsSb heterostructure, the pronounced interface asymmetry leads to a significantly better performance with negative bias polarity and can even lead to unidirectionally working devices, although the nominal band structure is symmetric. The results are a direct experimental proof that interface roughness scattering has a major impact on transport/lasing performance.

Detectivity enhancement in quantum well infrared photodetectors utilizing a photonic crystal slab resonator.

We characterize the performance of a quantum well infrared photodetector (QWIP), which is fabricated as a photonic crystal slab (PCS) resonator. The strongest resonance of the PCS is designed to coincide with the absorption peak frequency at 7.6 µm of the QWIP. To accurately characterize the detector performance, it is illuminated by using single mode mid-infrared lasers. The strong resonant absorption enhancement yields a detectivity increase of up to 20 times. This enhancement is a combined effect of increased responsivity and noise current reduction. With increasing temperature, we observe a red shift of the PCS-QWIP resonance peak of -0.055 cm(-1)/K. We attribute this effect to a refractive index change and present a model based on the revised plane wave method.

Diagonal-transition quantum cascade detector

We demonstrate the concept of diagonal transitions for quantum cascade detectors (QCD). Different to standard, vertical QCDs, here the active transition takes place between two energy levels in adjacent wells. Such a scheme has versatile advantages. Diagonal transitions generally yield a higher extraction efficiency and a higher resistance than vertical transitions. This leads to an improved overall performance, although the absorption strength of the active transition is smaller. Since the extraction is not based on resonant tunneling, the design is more robust, with respect to deviations from the nominal structure. In a first approach, a peak responsivity of 16.9 mA/W could be achieved, which is an improvement to the highest shown responsivity of a QCD for a wavelength of 8 μm at room-temperature by almost an order of magnitude.

A bi-functional quantum cascade device for same-frequency lasing and detection

We demonstrate a bi-functional quantum cascade device that detects at the same wavelength as it coherently emits. Our fabricated device operates at room-temperature with a pulsed peak power emission of 45 mW and a detector responsivity of 3.6 mA/W. We show how to compensate the intrinsic wavelength mismatch between the laser and the detector, based on a bound-to-continuum design. An overlap between the laser and the detector spectra was observed from 6.4 μm to 6.8 μm. The electro-luminescence spectrum almost perfectly matches the detector spectrum, overlapping from 6.2 μm to 7.1 μm.

InAs/AlAsSb based quantum cascade detector

In this letter, we introduce the InAs/AlAsSb material system for quantum cascade detectors (QCDs). InAs/AlAsSb can be grown lattice matched to InAs and exhibits a conduction band offset of approximately 2.1 eV, enabling the design of very short wavelength quantum cascade detectors. Another benefit using this material system is the low effective mass of the well material that improves the total absorption of the detector and decreases the intersubband scattering rates, which increases the device resistance and thus enhances the noise behavior. We have designed, grown, and measured a QCD that detects at a wavelength of λ = 4.84 μm and shows a peak specific detectivity of approximately 2.7 × 107 Jones at T = 300 K.

Monolithically Integrated Mid-Infrared Quantum Cascade Laser and Detector

We demonstrate the monolithic integration of a mid-infrared laser and detector utilizing a bi-functional quantum cascade active region. When biased, this active region provides optical gain, while it can be used as a detector at zero bias. With our novel approach we can measure the light intensity of the laser on the same chip without the need of external lenses or detectors. Based on a bound-to-continuum design, the bi-functional active region has an inherent broad electro-luminescence spectrum of 200 cm⁻¹, which indicates its use for single mode laser arrays. We have measured a peak signal of 191.5 mV at the on-chip detector, without any amplification. The room-temperature pulsed emission with an averaged power consumption of 4 mW and the high-speed detection makes these devices ideal for low-power sensors. The combination of the on-chip detection functionality, the broad emission spectrum and the low average power consumption indicates the potential of our bi-functional quantum cascade structures to build a mid-infrared lab-on-a-chip based on quantum cascade laser technology.

Mid-infrared surface transmitting and detecting quantum cascade device for gas-sensing.

We present a bi-functional surface emitting and surface detecting mid-infrared device applicable for gas-sensing. A distributed feedback ring quantum cascade laser is monolithically integrated with a detector structured from a bi-functional material for same frequency lasing and detection. The emitted single mode radiation is collimated, back reflected by a flat mirror and detected by the detector element of the sensor. The surface operation mode combined with the low divergence emission of the ring quantum cascade laser enables for long analyte interaction regions spatially separated from the sample surface. The device enables for sensing of gaseous analytes which requires a relatively long interaction region. Our design is suitable for 2D array integration with multiple emission and detection frequencies. Proof of principle measurements with isobutane (2-methylpropane) and propane as gaseous analytes were conducted. Detectable concentration values of 0–70% for propane and 0–90% for isobutane were reached at a laser operation wavelength of 6.5 μm utilizing a 10 cm gas cell in double pass configuration.

Plasmonic lens enhanced mid-infrared quantum cascade detector

We demonstrate monolithic integrated quantum cascade detectors enhanced by plasmonic lenses. Surface normal incident mid-infrared radiation is coupled to surface plasmon polaritons guided to and detected by the active region of the detector. The lens extends the optical effective active area of the device up to a 5 times larger area than for standard mesa detectors or pixel devices while the electrical active region stays the same. The extended optical area increases the absorption efficiency of the presented device as well as the room temperature performance while it offers a flexible platform for various detector geometries. A photocurrent response increase at room temperature up to a factor of 6 was observed.

Dopant migration effects in terahertz quantum cascade lasers

We demonstrate that dopant migration and the resulting impurity scattering can strongly influence the performance of GaAs/Al0.15Ga0.85As terahertz quantum cascade lasers. A nominally symmetric structure allows us to compare the negative and positive bias behavior of the very same device. Dopants, migrated towards the upper laser level during sample growth, degrade the lasing performance due to enhanced impurity scattering rates. The consequences are a higher threshold current (+30%) and reduced optical output power (–29%) in the affected operating direction. This polarity dependent performance is reversed in an asymmetrically doped sample, which imitates the migration of dopants against the growth direction.