Peter Schüffelgen

Electrical resistance of individual defects at a topological insulator surface

Three-dimensional topological insulators host surface states with linear dispersion, which manifest as a Dirac cone. Nanoscale transport measurements provide direct access to the transport properties of the Dirac cone in real space and allow the detailed investigation of charge carrier scattering. Here we use scanning tunnelling potentiometry to analyse the resistance of different kinds of defects at the surface of a (Bi0.53Sb0.47)2Te3 topological insulator thin film. We find the largest localized voltage drop to be located at domain boundaries in the topological insulator film, with a resistivity about four times higher than that of a step edge. Furthermore, we resolve resistivity dipoles located around nanoscale voids in the sample surface. The influence of such defects on the resistance of the topological surface state is analysed by means of a resistor network model. The effect resulting from the voids is found to be small compared with the other defects.

Bi1Te1 is a dual topological insulator

Markus Eschbach, ∗ Martin Lanius, ∗ Chengwang Niu, ∗ Ewa M lyńczak, 2 Pika Gospodarič, Jens Kellner, Peter Schüffelgen, Mathias Gehlmann, Sven Döring, Elmar Neumann, Martina Luysberg, Gregor Mussler, Lukasz Plucinski, † Markus Morgenstern, Detlev Grützmacher, Gustav Bihlmayer, Stefan Blügel, and Claus M. Schneider Peter Grünberg Institute and JARA-FIT, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany Faculty of Physics and Applied Computer Science, AGH University of Science and Technology, al. Mickiewicza 30, 30-059 Krakow, Poland II. Institute of Physics B and JARA-FIT, RWTH Aachen University, 52074 Aachen, Germany Peter Grünberg Institute and Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany (Dated: May 2, 2016)New three-dimensional (3D) topological phases can emerge in superlattices containing constituents of known two-dimensional topologies. Here we demonstrate that stoichiometric Bi1Te1, which is a natural superlattice of alternating two Bi2Te3 quintuple layers and one Bi bilayer, is a dual 3D topological insulator where a weak topological insulator phase and topological crystalline insulator phase appear simultaneously. By density functional theory, we find indices (0;001) and a non-zero mirror Chern number. We have synthesized Bi1Te1 by molecular beam epitaxy and found evidence for its topological crystalline and weak topological character by spin- and angle-resolved photoemission spectroscopy. The dual topology opens the possibility to gap the differently protected metallic surface states on different surfaces independently by breaking the respective symmetries, for example, by magnetic field on one surface and by strain on another surface.

Reinventing solid state electronics: harnessing quantum confinement in bismuth thin films

Solid state electronics relies on the intentional introduction of impurity atoms or dopants into a semiconductor crystal and/or the formation of junctions between different materials (heterojunctions) to create rectifiers, potential barriers, and conducting pathways. With these building blocks, switching and amplification of electrical currents and voltages is achieved. As miniaturization continues to ultra-scaled transistors with critical dimensions on the order of ten atomic lengths, the concept of doping to form rectifying junctions fails and heterojunction formation becomes extremely difficult. Here it is shown there is no need to introduce dopant atoms nor is the formation of a heterojunction required to achieve the fundamental electronic function of current rectification. Ideal diode behavior or rectification is achieved for the first time solely by manipulation of quantum confinement in approximately 2 nanometer thick films consisting of a single atomic element, the semimetal bismuth. Crucially for nanoelectronics, this new quantum approach enables room temperature operation.

Oxide removal and stabilization of bismuth thin films through chemically bound thiol layers

Bismuth has been identified as a material of interest for electronic applications due to its extremely high electron mobility and quantum confinement effects observed at nanoscale dimensions. However, it is also the case that Bi nanostructures are readily oxidised in ambient air, necessitating additional capping steps to prevent surface re-oxidation, thus limiting the processing potential of this material. This article describes an oxide removal and surface stabilization method performed on molecular beam epitaxy (MBE) grown bismuth thin-films using ambient air wet-chemistry. Alkanethiol molecules were used to dissolve the readily formed bismuth oxides through a catalytic reaction; the bare surface was then reacted with the free thiols to form an organic layer which showed resistance to complete reoxidation for up to 10 days.

Phase-coherent transport in topological insulator nanocolumns and nanoribbons

The transport properties of topological insulator nanostructures prepared by selective-area molecular beam epitaxy is investigated. For the nanocolumn structures based on Sb2Te3/Bi2Te3-heterostructures pronounced universal conductance fluctuations are observed in the magnetoconductance, indicating phase-coherent transport. Furthermore, angle-dependent measurements indicate that the phase coherent loops are mainly oriented parallel to the substrate plane. Measurements on nanoribbons based on (Bi0.57Sb0.43)2Te3 revealed a resistance dip due to weak antilocalization as well as universal conductance fluctuations. Here, we also found indications, that the phase-coherent loops are predominantly oriented parallel to the quintuple layers forming the topological insulator.