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international solid-state circuits conference | 1980

A 500V monolithic bidirectional 2×2 crosspoint array

Peter W. Shackle; A. Hartman; T. Riley; J. North; J. Berthold; J. Davis

This paper will report on a high voltage IC employing a gated diode switch replacing metallic switches normally used for the concentrator function that meets the telephone loop switch requirements, which are voltage blocking to +500V, surge conduction to 1A levels and interruption of direct currents forced by the 48V dc normally used to power telephone loops.


Archive | 1980

Dielectrically isolated high voltage semiconductor devices

Joseph Ernest Berthold; Adrian R. Hartman; Peter W. Shackle


Archive | 1981

High voltage solid-state switch

Adrian R. Hartman; Terence James Riley; Peter W. Shackle


Archive | 1978

Solid-state protector circuitry using gated diode switch

Adrian R. Hartman; Robert S. Scott; Peter W. Shackle


Archive | 1981

High voltage dielectrically isolated solid-state switch

Adrian R. Hartman; Terence James Riley; Peter W. Shackle


Archive | 1979

Dielectrically-isolated integrated circuit complementary transistors for high voltage use

Adrian R. Hartman; Terence James Riley; Peter W. Shackle


Archive | 1980

Control circuitry for high voltage solid-state switches

James Alvin Davis; William F. MacPherson; Harry Edward Mussman; Peter W. Shackle


Archive | 1979

Integral turn-on high voltage switch

William F. MacPherson; Robert S. Scott; Peter W. Shackle


Archive | 1979

Control circuitry using a pull-down transistor for high voltage field terminated diode solid-state switches

James Alvin Davis; William F. MacPherson; Peter W. Shackle


Archive | 1978

High voltage monolithic transistor circuit

Robert S. D'Angelo; Adrian R. Hartman; Peter W. Shackle

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