Phillip M. Wu

Superconductivity in the PbO-type structure α-FeSe

The recent discovery of superconductivity with relatively high transition temperature (Tc) in the layered iron-based quaternary oxypnictides La[O1−xFx] FeAs by Kamihara et al. [Kamihara Y, Watanabe T, Hirano M, Hosono H (2008) Iron-based layered superconductor La[O1-xFx] FeAs (x = 0.05–0.12) with Tc = 26 K. J Am Chem Soc 130:3296–3297.] was a real surprise and has generated tremendous interest. Although superconductivity exists in alloy that contains the element Fe, LaOMPn (with M = Fe, Ni; and Pn = P and As) is the first system where Fe plays the key role to the occurrence of superconductivity. LaOMPn has a layered crystal structure with an Fe-based plane. It is quite natural to search whether there exists other Fe based planar compounds that exhibit superconductivity. Here, we report the observation of superconductivity with zero-resistance transition temperature at 8 K in the PbO-type α-FeSe compound. A key observation is that the clean superconducting phase exists only in those samples prepared with intentional Se deficiency. FeSe, compared with LaOFeAs, is less toxic and much easier to handle. What is truly striking is that this compound has the same, perhaps simpler, planar crystal sublattice as the layered oxypnictides. Therefore, this result provides an opportunity to better understand the underlying mechanism of superconductivity in this class of unconventional superconductors.

Tellurium substitution effect on superconductivity of the α-phase iron selenide

We have carried out a systematic study of the PbO-type compound FeSe1−xTex (x=0–1), where the Te substitution effect on superconductivity is investigated. It is found that the superconducting transition temperature reaches a maximum of Tc=15.2 K at about 50% Te substitution. The pressure-enhanced Tc of FeSe0.5Te0.5 is more than 10 times larger than that of FeSe. Interestingly, FeTe is no longer superconducting. A low-temperature structural distortion changes FeTe from triclinic symmetry to orthorhombic symmetry. We believe that this structural change breaks the magnetic symmetry and suppresses superconductivity in FeTe.

Spatially resolved Hall effect measurement in a single semiconductor nanowire

Efficient light-emitting diodes and photovoltaic energy-harvesting devices are expected to play an important role in the continued efforts towards sustainable global power consumption. Semiconductor nanowires are promising candidates as the active components of both light-emitting diodes and photovoltaic cells, primarily due to the added freedom in device design offered by the nanowire geometry. However, for nanowire-based components to move past the proof-of-concept stage and be implemented in production-grade devices, it is necessary to precisely quantify and control fundamental material properties such as doping and carrier mobility. Unfortunately, the nanoscale geometry that makes nanowires interesting for applications also makes them inherently difficult to characterize. Here, we report a method to carry out Hall measurements on single core-shell nanowires. Our technique allows spatially resolved and quantitative determination of the carrier concentration and mobility of the nanowire shell. As Hall measurements have previously been completely unavailable for nanowires, the experimental platform presented here should facilitate the implementation of nanowires in advanced practical devices.

Crystal orientation and thickness dependence of the superconducting transition temperature of tetragonal FeSe1-x thin films.

Superconductivity was recently found in the tetragonal phase FeSe. A structural transformation from tetragonal to orthorhombic (or monoclinic, depending on point of view) was observed at low temperature, but was not accompanied by a magnetic ordering as commonly occurs in the parent compounds of FeAs-based superconductors. Here, we report the correlation between structural distortion and superconductivity in FeSe(1-x) thin films with different preferred growth orientations. The films with preferred growth along the c axis show a strong thickness dependent suppression of superconductivity and low temperature structural distortion. In contrast, both properties are less affected in the films with (101) preferred orientation. These results suggest that the low temperature structural distortion is closely associated with the superconductivity of this material.

Colorful InAs Nanowire Arrays: From Strong to Weak Absorption with Geometrical Tuning.

One-dimensional nanostructure arrays can show fascinatingly different, tunable optical response compared to bulk systems. Here we study theoretically and demonstrate experimentally how to engineer the reflection and absorption of light in epitaxially grown vertical arrays of InAs nanowires (NWs). A striking observation is optically visible colors of the array, which we show can be tuned depending on the geometrical parameters of the array. Specifically, larger diameter NW arrays absorb light more effectively out to a longer wavelength compared to smaller diameter arrays. Thus, controlling the diameter provides a way to tune the optically observable color of an array. We also find that arrays with a larger amount of InAs material reflect less light (or absorb more light) than arrays with less material. On the basis of these two trends, InAs NW arrays can be designed to absorb light either much more or much less efficiently than a thin film of an effective medium containing the same amount of InAs as the NW array. The tunable absorption and low area filling factor of the NW arrays compared to thin film bode well for III-V photovoltaics and photodetection.

Large Thermoelectric Power Factor Enhancement Observed in InAs Nanowires.

We report the observation of a thermoelectric power factor in InAs nanowires that exceeds that predicted by a single-band bulk model by up to an order of magnitude at temperatures below about 20 K. We attribute this enhancement effect not to the long-predicted 1D subband effects but to quantum-dot-like states that form in electrostatically nonuniform nanowires as a result of interference between propagating states and 0D resonances.

Nonlinear thermovoltage and thermocurrent in quantum dots

Quantum dots are model systems for quantum thermoelectric behavior because of their ability to control and measure the effects of electron-energy filtering and quantum confinement on thermoelectric properties. Interestingly, nonlinear thermoelectric properties of such small systems can modify the efficiency of thermoelectric power conversion. Using quantum dots embedded in semiconductor nanowires, we measure thermovoltage and thermocurrent that are strongly nonlinear in the applied thermal bias. We show that most of the observed nonlinear effects can be understood in terms of a renormalization of the quantum-dot energy levels as a function of applied thermal bias and provide a theoretical model of the nonlinear thermovoltage taking renormalization into account. Furthermore, we propose a theory that explains a possible source of the observed, pronounced renormalization effect by the melting of Kondo correlations in the mixed-valence regime. The ability to control nonlinear thermoelectric behavior expands the range in which quantum thermoelectric effects may be used for efficient energy conversion.

Hopping Conduction in Mn Ion-Implanted GaAs Nanowires

We report on temperature-dependent charge transport in heavily doped Mn(+)-implanted GaAs nanowires. The results clearly demonstrate that the transport is governed by temperature-dependent hopping processes, with a crossover between nearest neighbor hopping and Mott variable range hopping at about 180 K. From detailed analysis, we have extracted characteristic hopping energies and corresponding hopping lengths. At low temperatures, a strongly nonlinear conductivity is observed which reflects a modified hopping process driven by the high electric field at large bias.

Drastically Increased Absorption in Vertical Semiconductor Nanowire Arrays: A Non-Absorbing Dielectric Shell Makes the Difference

AbstractEnhanced absorption of especially long wavelength light is needed to enable the full potential of semiconductor nanowire (NW) arrays for optoelectronic applications. We show both experimentally and theoretically that a transparent dielectric shell (Al2O3 coating) can drastically improve the absorption of light in InAs NW arrays. With an appropriate thickness of the Al2O3 shell, we achieve four times stronger absorption in the NWs compared to uncoated NWs and twice as good absorption as when the dielectric completely fills the space between the NWs. We provide detailed theoretical analysis from a combination of full electrodynamic modeling and intuitive electrostatic approximations. This reveals how the incident light penetrates better into the absorbing NW core with increasing thickness of the dielectric shell until a resonant shell thickness is reached. We provide a simple description of how to reach this strongly absorbing resonance condition, making our results easy to apply for a broad wavelength range and a multifold of semiconductor and dielectric coating material combinations.

Toward 3D integration of 1D conductors: junctions of InAs nanowires

A vision and one of the next challenges in nanoelectronics is the 3D integration of nanowire building blocks. Here we show that capillary forces associated with a liquid-air meniscus between two nanowires provides a simple, controllable technique to bend vertical nanowires into designed, interconnected assemblies. We characterize the electric nature of the junctions between crossed nanowires in a lateral geometry, which is one type of basic unit that can be found in interconnected-bent vertical nanowires. The crossed nanowire junction is capacitive in nature, and we demonstrate that one nanowire can be used to field effect gate the other nanowire, allowing for the possibility to develop extremely narrow conducting channels in nanowire planar or 3D electronic devices.