Pietro Gambardella

Perpendicular switching of a single ferromagnetic layer induced by in-plane current injection.

Modern computing technology is based on writing, storing and retrieving information encoded as magnetic bits. Although the giant magnetoresistance effect has improved the electrical read out of memory elements, magnetic writing remains the object of major research efforts. Despite several reports of methods to reverse the polarity of nanosized magnets by means of local electric fields and currents, the simple reversal of a high-coercivity, single-layer ferromagnet remains a challenge. Materials with large coercivity and perpendicular magnetic anisotropy represent the mainstay of data storage media, owing to their ability to retain a stable magnetization state over long periods of time and their amenability to miniaturization. However, the same anisotropy properties that make a material attractive for storage also make it hard to write to. Here we demonstrate switching of a perpendicularly magnetized cobalt dot driven by in-plane current injection at room temperature. Our device is composed of a thin cobalt layer with strong perpendicular anisotropy and Rashba interaction induced by asymmetric platinum and AlOx interface layers. The effective switching field is orthogonal to the direction of the magnetization and to the Rashba field. The symmetry of the switching field is consistent with the spin accumulation induced by the Rashba interaction and the spin-dependent mobility observed in non-magnetic semiconductors, as well as with the torque induced by the spin Hall effect in the platinum layer. Our measurements indicate that the switching efficiency increases with the magnetic anisotropy of the cobalt layer and the oxidation of the aluminium layer, which is uppermost, suggesting that the Rashba interaction has a key role in the reversal mechanism. To prove the potential of in-plane current switching for spintronic applications, we construct a reprogrammable magnetic switch that can be integrated into non-volatile memory and logic architectures. This device is simple, scalable and compatible with present-day magnetic recording technology.

Current-driven spin torque induced by the Rashba effect in a ferromagnetic metal layer

Methods to manipulate the magnetization of ferromagnets by means of local electric fields or current-induced spin transfer torque allow the design of integrated spintronic devices with reduced dimensions and energy consumption compared with conventional magnetic field actuation. An alternative way to induce a spin torque using an electric current has been proposed based on intrinsic spin-orbit magnetic fields and recently realized in a strained low-temperature ferromagnetic semiconductor. Here we demonstrate that strong magnetic fields can be induced in ferromagnetic metal films lacking structure inversion symmetry through the Rashba effect. Owing to the combination of spin-orbit and exchange interactions, we show that an electric current flowing in the plane of a Co layer with asymmetric Pt and AlO(x) interfaces produces an effective transverse magnetic field of 1 T per 10(8) A cm(-2). Besides its fundamental significance, the high efficiency of this process makes it a realistic candidate for room-temperature spintronic applications.

Ferromagnetism in one-dimensional monatomic metal chains

Two-dimensional systems, such as ultrathin epitaxial films and superlattices, display magnetic properties distinct from bulk materials. A challenging aim of current research in magnetism is to explore structures of still lower dimensionality. As the dimensionality of a physical system is reduced, magnetic ordering tends to decrease as fluctuations become relatively more important. Spin lattice models predict that an infinite one-dimensional linear chain with short-range magnetic interactions spontaneously breaks up into segments with different orientation of the magnetization, thereby prohibiting long-range ferromagnetic order at a finite temperature. These models, however, do not take into account kinetic barriers to reaching equilibrium or interactions with the substrates that support the one-dimensional nanostructures. Here we demonstrate the existence of both short- and long-range ferromagnetic order for one-dimensional monatomic chains of Co constructed on a Pt substrate. We find evidence that the monatomic chains consist of thermally fluctuating segments of ferromagnetically coupled atoms which, below a threshold temperature, evolve into a ferromagnetic long-range-ordered state owing to the presence of anisotropy barriers. The Co chains are characterized by large localized orbital moments and correspondingly large magnetic anisotropy energies compared to two-dimensional films and bulk Co.

Symmetry and magnitude of spin-orbit torques in ferromagnetic heterostructures

Recent demonstrations of magnetization switching induced by in-plane current injection in heavy metal/ferromagnetic heterostructures have drawn increasing attention to spin torques based on orbital-to-spin momentum transfer. The symmetry, magnitude and origin of spin-orbit torques (SOTs), however, remain a matter of debate. Here we report on the three-dimensional vector measurement of SOTs in AlOx/Co/Pt and MgO/CoFeB/Ta trilayers using harmonic analysis of the anomalous and planar Hall effects. We provide a general scheme to measure the amplitude and direction of SOTs as a function of the magnetization direction. Based on space and time inversion symmetry arguments, we demonstrate that heavy metal/ferromagnetic layers allow for two different SOTs having odd and even behaviour with respect to magnetization reversal. Such torques include strongly anisotropic field-like and spin transfer-like components, which depend on the type of heavy metal layer and annealing treatment. These results call for SOT models that go beyond the spin Hall and Rashba effects investigated thus far.

Electronic and magnetic properties of molecule-metal interfaces: Transition-metal phthalocyanines adsorbed on Ag(100)

We present a systematic investigation of molecule-metal interactions for transition-metal phthalocyanines (TMPc, with TM = Fe, Co, Ni, Cu) adsorbed on Ag(100). Scanning tunneling spectroscopy and density functional theory provide insight into the charge transfer and hybridization mechanisms of TMPc as a function of increasing occupancy of the 3d metal states. We show that all four TMPc receive approximately one electron from the substrate. Charge transfer occurs from the substrate to the molecules, inducing a charge reorganization in FePc and CoPc, while adding one electron to ligand π orbitals in NiPc and CuPc. This has opposite consequences on the molecular magnetic moment: In FePc and CoPc the interaction with the substrate tends to reduce the TM spin, whereas, in NiPc and CuPc, an additional spin is induced on the aromatic Pc ligand, leaving the TM spin unperturbed. In CuPc, the presence of both TM and ligand spins leads to a triplet ground state arising from intramolecular exchange coupling between d and π electrons. In FePc and CoPc the magnetic moment of C and N atoms is antiparallel to that of the TM. The different character and symmetry of the frontier orbitals in the TMPc series leads to varying degrees of hybridization and correlation effects, ranging from the mixed-valence (FePc, CoPc) to the Kondo regime (NiPc, CuPc). Coherent coupling between Kondo and inelastic excitations induces finite-bias Kondo resonances involving vibrational transitions in both NiPc and CuPc and triplet-singlet transitions in CuPc.

Ultrafast magnetization switching by spin-orbit torques

Spin-orbit torques induced by spin Hall and interfacial effects in heavy metal/ferromagnetic bilayers allow for a switching geometry based on in-plane current injection. Using this geometry, we demonstrate deterministic magnetization reversal by current pulses ranging from 180 ps to ms in Pt/Co/AlOx dots with lateral dimensions of 90 nm. We characterize the switching probability and critical current Ic as a function of pulse length, amplitude, and external field. Our data evidence two distinct regimes: a short-time intrinsic regime, where Ic scales linearly with the inverse of the pulse length, and a long-time thermally assisted regime, where Ic varies weakly. Both regimes are consistent with magnetization reversal proceeding by nucleation and fast propagation of domains. We find that Ic is a factor 3–4 smaller compared to a single domain model and that the incubation time is negligibly small, which is a hallmark feature of spin-orbit torques.

Reaching the magnetic anisotropy limit of a 3d metal atom

Maximizing atomic magnetic memory A study of the magnetic response of cobalt atoms adsorbed on oxide surfaces may lead to much denser storage of data. In hard drives, data are stored as magnetic bits; the magnetic field pointing up or down corresponds to storing a zero or a one. The smallest bit possible would be a single atom, but the magnetism of a single atom —its spin—has to be stabilized by interactions with heavy elements or surfaces through an effect called spin-orbit coupling. Rau et al. (see the Perspective by Khajetoorians and Wiebe) built a model system in pursuit of single-atom bits—cobalt atoms adsorbed on magnesium oxide. At temperatures approaching absolute zero, the stabilization of the spins magnetic direction reached the maximum that is theoretically possible. Science, this issue p. 988; see also p. 976 A cobalt atom bound to a single oxygen site on magnesia has the maximum magnetic anisotropy allowed for a transition metal [Also see Perspective by Khajetoorians and Wiebe] Designing systems with large magnetic anisotropy is critical to realize nanoscopic magnets. Thus far, the magnetic anisotropy energy per atom in single-molecule magnets and ferromagnetic films remains typically one to two orders of magnitude below the theoretical limit imposed by the atomic spin-orbit interaction. We realized the maximum magnetic anisotropy for a 3d transition metal atom by coordinating a single Co atom to the O site of an MgO(100) surface. Scanning tunneling spectroscopy reveals a record-high zero-field splitting of 58 millielectron volts as well as slow relaxation of the Co atom’s magnetization. This striking behavior originates from the dominating axial ligand field at the O adsorption site, which leads to out-of-plane uniaxial anisotropy while preserving the gas-phase orbital moment of Co, as observed with x-ray magnetic circular dichroism.

Spin and Orbital Magnetic Moment Anisotropies of Monodispersed Bis(Phthalocyaninato)Terbium on a Copper Surface

The magnetic properties of isolated TbPc(2) molecules supported on a Cu(100) surface are investigated by X-ray magnetic circular dichroism at 8 K in magnetic fields up to 5 T. The crystal field and magnetic properties of single molecules are found to be robust upon adsorption on a metal substrate. The Tb magnetic moment has Ising-like magnetization; XMCD spectra combined with multiplet calculations show that the saturation orbital and spin magnetic moment values reach 3 and 6 mu(B), respectively.

Current-induced spin-orbit torques

The ability to reverse the magnetization of nanomagnets by current injection has attracted increased attention ever since the spin-transfer torque mechanism was predicted in 1996. In this paper, we review the basic theoretical and experimental arguments supporting a novel current-induced spin torque mechanism taking place in ferromagnetic (FM) materials. This effect, hereafter named spin–orbit (SO) torque, is produced by the flow of an electric current in a crystalline structure lacking inversion symmetry, which transfers orbital angular momentum from the lattice to the spin system owing to the combined action of SO and exchange coupling. SO torques are found to be prominent in both FM metal and semiconducting systems, allowing for great flexibility in adjusting their orientation and magnitude by proper material engineering. Further directions of research in this field are briefly outlined.

Spin-orbit torque magnetization switching of a three-terminal perpendicular magnetic tunnel junction

We report on the current-induced magnetization switching of a three-terminal perpendicular magnetic tunnel junction by spin-orbit torque and its read-out using the tunnelling magnetoresistance (TMR) effect. The device is composed of a perpendicular Ta/FeCoB/MgO/FeCoB stack on top of a Ta current line. The magnetization of the bottom FeCoB layer can be switched reproducibly by the injection of current pulses with density 5 × 1011 A/m2 in the Ta layer in the presence of an in-plane bias magnetic field, leading to the full-scale change of the TMR signal. Our work demonstrates the proof of concept of a perpendicular spin-orbit torque magnetic memory cell.