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Featured researches published by Pkn Yu.


Australasian Physical & Engineering Sciences in Medicine | 2006

Scanning orientation effects on Gafchromic EBT film dosimetry

Martin J Butson; Tsang Cheung; Pkn Yu

Gafchromic EBT film, a new high sensitivity radiochromic film has been tested for variations in optical properties due to scanning orientation. Gafchromic EBT film has been shown to produce a scanning orientation effect whereby variations in measured relative optical density are found due to the films orientation relative to the scanner direction. This relative optical density change was found to be relatively consistent for different films exposed to varying dose levels ranging from 0 Gy to 3 Gy. A maximum variation of 0.0157±0.0035 in optical density (OD) was found. This relates to an approximate 15 % variation in net OD for a 50 cGy irradiated film and 4 % variation for a 3 Gy irradiated film. No noticeable effects or variations were seen with changing scanning resolution or with the film placed “up or down” during scanning. Other Gafchromic film types were tested and compared to EBT for unirradiated film to assess the magnitude of this orientation effect on the scanner used and results showed that EBT produced a significantly higher effect that MD-55-2, HS, XR type T and XR type R film by up to 3 times. As such, providing the same orientation of EBT film when scanning for dosimetric analysis becomes an essential part of EBT film dosimetry.


Australasian Physical & Engineering Sciences in Medicine | 2009

Evaluation of the magnitude of EBT Gafchromic film polarization effects.

Martin J Butson; Tsang Cheung; Pkn Yu

Gafchromic EBT film, has become a main dosimetric tools for quantitative evaluation of radiation doses in radiation therapy application. One aspect of variability using EBT Gafchromic film is the magnitude of the orientation effect when analysing the film in landscape or portrait mode. This work has utilized a >99% plane polarized light source and a non-polarized diffuse light source to investigate the absolute magnitude of EBT Gafchromic films polarization or orientation effects. Results have shown that using a non-polarized light source produces a negligible orientation effect for EBT Gafchromic film and thus the angle of orientation is not important. However, the film exhibits a significant variation in transmitted optical density with angle of orientation to polarized light producing more than 100% increase, or over a doubling of measured OD for films irradiated with x-rays up to dose levels of 5 Gy. The maximum optical density was found to be in a plane at an angle of 14 °±7 ° (2SD) when the polarizing sheet is turned clockwise with respect to the film. As the magnitude of the orientation effect follows a sinusoidal shape it becomes more critical for alignment accuracy of the film with respect to the polarizing direction in the anticlockwise direction as this will place the alignment of the polarizing axes on the steeper gradient section of the sinusoidal pattern. An average change of 4.5 % per 5 ° is seen for an anticlockwise polarizer rotation where as the effect is 1.2 % per 5 ° for an clockwise polarizer rotation. This may have consequences to the positional accuracy of placement of the EBT Gafchromic film on a scanner as even a 1 ° alignment error can cause an approximate 1 % error in analysis. The magnitude of the orientation effect is therefore dependant on the degree of polarization of the scanning light source and can range from negligible (diffuse LED light source) through to more than 100 % or doubling of OD variation with a fully linear polarized light source.


Australasian Physical & Engineering Sciences in Medicine | 2009

Energy Dependence Corrections to MOSFET Dosimetric Sensitivity

Tsang Cheung; Martin J Butson; Pkn Yu

Metal Oxide Semiconductor Field Effect Transistors (MOSFET’s) are dosimeters which are now frequently utilized in radiotherapy treatment applications. An improved MOSFET , clinical semiconductor dosimetry system (CSDS) which utilizes improved packaging for the MOSFET device has been studied for energy dependence of sensitivity to x-ray radiation measurement. Energy dependence from 50 kVp to 10 MV x-rays has been studied and found to vary by up to a factor of 3.2 with 75 kVp producing the highest sensitivity response. The detectors average life span in high sensitivity mode is energy related and ranges from approximately 100 Gy for 75 kVp x-rays to approximately 300 Gy at 6 MV x-ray energy. The MOSFET detector has also been studied for sensitivity variations with integrated dose history. It was found to become less sensitive to radiation with age and the magnitude of this effect is dependant on radiation energy with lower energies producing a larger sensitivity reduction with integrated dose. The reduction in sensitivity is however approximated reproducibly by a slightly non linear, second order polynomial function allowing corrections to be made to readings to account for this effect to provide more accurate dose assessments both in phantom and in-vivo.


Australasian Physical & Engineering Sciences in Medicine | 2004

Superficial X-ray In-vivo Dosimetry with MOSFET Detectors

Tsang Cheung; Pkn Yu; Martin J Butson


Australasian Physical & Engineering Sciences in Medicine | 2004

Radiochromic Film and Polarization Effects

Pkn Yu; Tsang Cheung; Martin J Butson; D Inwood


Australasian Physical & Engineering Sciences in Medicine | 2004

Mosfet Dosimetry: Temperature Effects In-vivo

Pkn Yu; Tsang Cheung; Martin J Butson


Australasian Physical & Engineering Sciences in Medicine | 2004

Assessment of Low Absorbed Dose with a MOSFET Detector

Martin J Butson; Tsang Cheung; Pkn Yu


Australasian Physical & Engineering Sciences in Medicine | 2004

Skin Dose Variation: Influence of Energy

Tsang Cheung; Pkn Yu; Martin J Butson


Australasian Physical & Engineering Sciences in Medicine | 2004

Radiographic Film Dosimetry: Polarization Effects

Martin J Butson; Tsang Cheung; Pkn Yu


Australasian Physical & Engineering Sciences in Medicine | 2004

SSD Effects on High Energy X-ray Surface and Build Up Dose

Tsang Cheung; Martin J Butson; Pkn Yu

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Martin J Butson

City University of Hong Kong

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Tsang Cheung

City University of Hong Kong

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