Q. L. Ma

Observation of a large spin-dependent transport length in organic spin valves at room temperature

The integration of organic semiconductors and magnetism has been a fascinating topic for fundamental scientific research and future applications in electronics, because organic semiconductors are expected to possess a large spin-dependent transport length based on weak spin-orbit coupling and weak hyperfine interaction. However, to date, this length has typically been limited to several nanometres at room temperature, and a large length has only been observed at low temperatures. Here we report on a novel organic spin valve device using C(60) as the spacer layer. A magnetoresistance ratio of over 5% was observed at room temperature, which is one of the highest magnetoresistance ratios ever reported. Most importantly, a large spin-dependent transport length of approximately 110 nm was experimentally observed for the C(60) layer at room temperature. These results provide insights for further understanding spin transport in organic semiconductors and may strongly advance the development of spin-based organic devices.

Composition dependence of magnetoresistance effect and its annealing endurance in tunnel junctions having Mn-Ga electrode with high perpendicular magnetic anisotropy

The composition dependence of the tunnel magnetoresistance (TMR) effect in Mn-Ga/MgO/CoFe magnetic tunnel junctions (MTJs) for Mn54Ga46, Mn62Ga38, and Mn71Ga29 (at. %) electrodes was investigated. An MTJ with a Mn62Ga38 electrode showed a maximum TMR ratio of 23% at 10 K and high annealing endurance up to 375 °C. The bias voltage dependence of the TMR ratio was distinct among MTJs with different Mn-Ga compositions. Here, we discuss this dependence on the basis of the difference in the Δ1 band dispersions for Mn-Ga alloys calculated by first principles.The composition dependence of the tunnel magnetoresistance (TMR) effect in Mn-Ga/MgO/CoFe magnetic tunnel junctions (MTJs) for Mn54Ga46, Mn62Ga38, and Mn71Ga29 (at. %) electrodes was investigated. An MTJ with a Mn62Ga38 electrode showed a maximum TMR ratio of 23% at 10 K and high annealing endurance up to 375 °C. The bias voltage dependence of the TMR ratio was distinct among MTJs with different Mn-Ga compositions. Here, we discuss this dependence on the basis of the difference in the Δ1 band dispersions for Mn-Ga alloys calculated by first principles.

Effect of Mg interlayer on perpendicular magnetic anisotropy of CoFeB films in MgO/Mg/CoFeB/Ta structure

The effects of Mg metallic interlayer on the magnetic properties of thin CoFeB films in MgO/Mg (tMg)/CoFeB (1.2 nm)/Ta structures were studied in this letter. Our experimental result shows that the CoFeB film exhibits perpendicular magnetic anisotropy (PMA) when the CoFeB and MgO layers are separated by a metallic Mg layer with a maximum thickness of 0.8 nm. The origin of PMA was discussed by considering the preferential transmission of the Δ1 symmetry preserved by the Mg interlayer in crystallized MgO/Mg/CoFeB/Ta. In addition, the thin Mg interlayer also contributes to enhancing the thermal stability and reducing the effective damping constant and coercivity of the CoFeB film.

Damping of Magnetization Precession in Perpendicularly Magnetized CoFeB Alloy Thin Films

Gilbert damping is investigated in perpendicularly magnetized CoFeB thin films using ferromagnetic resonance and time-resolved magneto-optical Kerr effect. The CoFeB films were deposited on a MgO layer and annealed at different temperatures. The lowest effective damping constant αeff values were 0.017, 0.013, and 0.009 for the films annealed at 250, 300, and 350 °C, respectively; these values were smaller than the values reported previously.

Spin-dependent transport behavior in C60 and Alq3 based spin valves with a magnetite electrode (invited)

The spin-dependent transport behavior in organic semiconductors (OSs) is generally observed at low temperatures, which likely results from poor spin injection efficiency at room temperature from the ferromagnetic metal electrodes to the OS layer. Possible reasons for this are the low Curie temperature and/or the small spin polarization efficiency for the ferromagnetic electrodes used in these devices. Magnetite has potential as an advanced candidate for use as the electrode in spintronic devices, because it can achieve 100% spin polarization efficiency in theory, and has a high Curie temperature (850 K). Here, we fabricated two types of organic spin valves using magnetite as a high efficiency electrode. C60 and 8-hydroxyquinoline aluminum (Alq3) were employed as the OS layers. Magnetoresistance ratios of around 8% and over 6% were obtained in C60 and Alq3-based spin valves at room temperature, respectively, which are two of the highest magnetoresistance ratios in organic spin valves reported thus far. The...

TETRAGONAL HEUSLER-LIKE Mn–Ga ALLOYS BASED PERPENDICULAR MAGNETIC TUNNEL JUNCTIONS

Films of the Mn-based tetragonal Heusler-like alloys, such as Mn–Ga, exhibit a large perpendicular magnetic anisotropy (PMA), small damping constant, small saturation magnetization and large spin polarizations. These properties are attractive for the application to the next generation high density spin-transfer-torque (STT) magnetic random access memory (STT-MRAM). We reviewed the structure, magnetic properties and Gilbert damping of the alloy films with large PMA, and the current status of research on tunnel magnetoresistance (TMR) in perpendicular magnetic tunnel junctions (p-MTJs) based on Mn-based tetragonal Heusler-like alloy electrode, and also discuss the issues for the application of those to STT-MRAM.

Dependence of Tunnel Magnetoresistance Effect on Fe Thickness of Perpendicularly Magnetized L10-Mn62Ga38/Fe/MgO/CoFe Junctions

The tunnel magnetoresistance (TMR) ratio in a magnetic tunnel junction (MTJ) with an L10-Mn62Ga38/Fe/MgO/CoFe structure was considerably improved by Fe layer insertion. A maximum TMR ratio of 24% was observed in an MTJ with a Fe thickness of 1.1 nm at room temperature, which corresponded to a 57% TMR ratio in the case of a complete antiparallel magnetization configuration. Fe layer thickness dependences of the magnetization curve and TMR effect were also investigated. It was revealed that the magnetization of Fe on 30-nm-thick MnGa could be fixed in a perpendicular direction when the thickness of the Fe was below 2.0 nm.

Magnetoresistance Effect in Rubrene-Based Spin Valves at Room Temperature

We fabricate spin-valve devices with an Fe3O4/AlO/rubrene/Co stacking structure. Their magnetoresistance (MR) effects at room temperature and low temperatures are systemically investigated based on the measurement of MR curves, current-voltage response, etc. A large MR ratio of approximately 6% is achieved at room temperature, which is one of the highest MR ratios reported to date in organic spin valves. With decreasing measurement temperatures, we observe that the MR ratios increase because of decrease in spin scattering, and the width of the MR curves becomes larger owing to increase in the coercivity of the electrodes at low temperature. A nonlinear current-voltage dependence is clearly observed in these organic spin valves. From the measurement of MR curve for the spin valves with different rubrene layer thickness, we observe that the MR ratios monotonously decrease with increasing rubrene-layer thickness. We discuss the spin-dependent transport mechanisms in these devices based on our experimental results and the present theoretical analysis. Moreover, we note that the devices exhibit smaller MR ratios after annealing compared to their counterparts without annealing. On the basis of atomic force microscopy analysis of the organic films and device resistances, we deduce that the increase of interface spin scattering induced by large surface roughness after annealing most probably leads to reduction in the MR ratios.

Artificially engineered Heusler ferrimagnetic superlattice exhibiting perpendicular magnetic anisotropy

To extend density limits in magnetic recording industry, two separate strategies were developed to build the storage bit in last decade, introduction of perpendicular magnetic anisotropy (PMA) and adoption of ferrimagnetism/antiferromagnetism. Meanwhile, these properties significantly improve device performance, such as reducing spin-transfer torque energy consumption and decreasing signal-amplitude-loss. However, materials combining PMA and antiferromagnetism rather than transition-metal/rare-earth system were rarely developed. Here, we develop a new type of ferrimagnetic superlattice exhibiting PMA based on abundant Heusler alloy families. The superlattice is formed by [MnGa/Co2FeAl] unit with their magnetizations antiparallel aligned. The effective anisotropy (Kueff) over 6 Merg/cm3 is obtained, and the SL can be easily built on various substrates with flexible lattice constants. The coercive force, saturation magnetization and Kueff of SLs are highly controllable by varying the thickness of MnGa and Co2FeAl layers. The SLs will supply a new choice for magnetic recording and spintronics memory application such as magnetic random access memory.

Interfacial exchange coupling in cubic Heusler Co2FeZ (Z = Al and Si)/tetragonal Mn3Ga bilayers

We have fabricated bilayer films of tetragonal Heusler-like D022 Mn3Ga and cubic Heusler Co2FeZ (Z = Si and Al) on (100) single-crystalline MgO substrates and investigated their structural and interfacial exchange coupling. The coupling in the Mn3Ga/Co2FeAl bilayer was either ferromagnetic or antiferromagnetic, depending on annealing temperature, whereas only antiferromagnetic exchange coupling was observed in the Mn3Ga/Co2FeSi bilayers. The effects of annealing on the structure and coupling strength in the bilayers are discussed.