Shigemi Mizukami

Large voltage-induced magnetic anisotropy change in a few atomic layers of iron

In the field of spintronics, researchers have manipulated magnetization using spin-polarized currents. Another option is to use a voltage-induced symmetry change in a ferromagnetic material to cause changes in magnetization or in magnetic anisotropy. However, a significant improvement in efficiency is needed before this approach can be used in memory devices with ultralow power consumption. Here, we show that a relatively small electric field (less than 100 mV nm(-1)) can cause a large change (approximately 40%) in the magnetic anisotropy of a bcc Fe(001)/MgO(001) junction. The effect is tentatively attributed to the change in the relative occupation of 3d orbitals of Fe atoms adjacent to the MgO barrier. Simulations confirm that voltage-controlled magnetization switching in magnetic tunnel junctions is possible using the anisotropy change demonstrated here, which could be of use in the development of low-power logic devices and non-volatile memory cells.

The study on ferromagnetic resonance linewidth for NM/80NiFe/NM (NM=Cu, Ta, Pd and Pt) Films

The out-of-plane angular dependence of ferromagnetic resonance (FMR) was measured for NM/80NiFe(Py)/NM (NM=Cu, Ta, Pd and Pt) films with various Py, Cu and Ta thicknesses fabricated by magnetron sputtering. The out-of-plane angular dependences of FMR resonance field and linewidth were analyzed using Landau-Lifshitz-Gilbert equation taking account of broadening of linewidth due to magnetic inhomogeneities in a film. Magnetic inhomogeneities were assumed to be the fluctuation of magnitude and direction of the effective demagnetization field which contains both demagnetization and perpendicular anisotropy field for a film. The calculations of the angular variations of linewidth agreed with the experimental ones quantitatively. The fluctuations of magnitude and direction of the effective demagnetization field, which are represented as Δ(4πMeff.) and ΔθH, respectively, increased with decreasing Py thickness for all NM/Py/NM films. ΔθH increased as the thicknesses of the buffer layers increased for Cu/Py(40 A)/Cu films and was almost constant with increasing buffer layer thickness for Ta/Py(40 A)/Ta films. Only in the case of NM=Pd and Pt films, the Gilbert damping parameter, which is the speed of decay of magnetization precession, was enhanced significantly as compared with that for the bulk sample and was dependent on Py thickness.

Epitaxial Mn2.5Ga thin films with giant perpendicular magnetic anisotropy for spintronic devices

We report on epitaxial growth and magnetic properties of Mn2.5Ga thin films, which were deposited on Cr/MgO single crystal substrates by magnetron sputtering. X-ray diffraction results revealed the epitaxial relationships as Mn2.5Ga(001)[100]∥Cr(001)[110]∥MgO(001)[100]. The presence of (002) and (011) superlattice peaks indicates that the films were crystallized into DO22 ordered structures. The perpendicular magnetic anisotropy (PMA) properties were found to be related to the extent of DO22 chemical ordering. A giant PMA (Kueff=1.2×107 erg/cm3) and low saturation magnetization (Ms=250 emu/cm3) can be obtained for the film with highest chemical ordering parameter (S=0.8).

Low damping constant for Co2FeAl Heusler alloy films and its correlation with density of states

Gilbert damping for the epitaxial Co2FeAl Heusler alloy films was investigated. Gilbert damping constant for the films was evaluated by analyzing the data of ferromagnetic resonance measured at the frequency of 2–20 GHz. Gilbert damping constant for the film without annealing was rather large, while it decreased remarkably with postannealing. Gilbert damping constant for the film annealed at 600 °C was ≃0.001. These behavior of Gilbert damping constant can be well explained by the fact that the density of states calculated from first principles decreases with increasing the degree of B2 order.

Half-metallicity and Gilbert damping constant in Co2FexMn1-xSi Heusler alloys depending on the film composition

Transport properties in magnetic tunnel junctions (MTJs) with Co2FexMn1−xSi (CFMS, x=0–1.0)/Al–O/Co75Fe25 structure and Gilbert damping constant in the epitaxial CFMS films were investigated. The tunnel magnetoresistance ratio is as high as 75% in MTJs with x=0.6 at room temperature. The Gilbert damping constant is minimal at x=0.4. Relations between half-metallicity and the Gilbert damping constant in CFMS films were examined, revealing that the damping constant is small in half-metallic CFMS films.

Observation of a large spin-dependent transport length in organic spin valves at room temperature

The integration of organic semiconductors and magnetism has been a fascinating topic for fundamental scientific research and future applications in electronics, because organic semiconductors are expected to possess a large spin-dependent transport length based on weak spin-orbit coupling and weak hyperfine interaction. However, to date, this length has typically been limited to several nanometres at room temperature, and a large length has only been observed at low temperatures. Here we report on a novel organic spin valve device using C(60) as the spacer layer. A magnetoresistance ratio of over 5% was observed at room temperature, which is one of the highest magnetoresistance ratios ever reported. Most importantly, a large spin-dependent transport length of approximately 110 nm was experimentally observed for the C(60) layer at room temperature. These results provide insights for further understanding spin transport in organic semiconductors and may strongly advance the development of spin-based organic devices.

Gilbert Damping in Ni/Co Multilayer Films Exhibiting Large Perpendicular Anisotropy

Gilbert damping is reported in perpendicularly magnetized Ni/Co multilayer films with Pt buffer and capping layers, and investigated through the time-resolved magneto-optical Kerr effect under various applied magnetic field strengths and directions. Both damping constant α and perpendicular magnetic anisotropy energy Ku depend strongly on layer thickness and bilayer periodicity, and rise to approximately 0.08 and 8 Merg/cm3, respectively. The Gilbert damping rate depends linearly on inverse multilayer thickness, indicating that large damping in the Ni/Co multilayers stems from its interfaces in contact with the Pt layers.

Roadmap for Emerging Materials for Spintronic Device Applications

The Technical Committee of the IEEE Magnetics Society has selected seven research topics to develop their roadmaps, where major developments should be listed alongside expected timelines: 1) hard disk drives; 2) magnetic random access memories; 3) domain-wall devices; 4) permanent magnets; 5) sensors and actuators; 6) magnetic materials; and 7) organic devices. Among them, magnetic materials for spintronic devices have been surveyed as the first exercise. In this roadmap exercise, we have targeted magnetic tunnel and spin-valve junctions as spintronic devices. These can be used, for example, as a cell for a magnetic random access memory and a spin-torque oscillator in their vertical form as well as a spin transistor and a spin Hall device in their lateral form. In these devices, the critical role of magnetic materials is to inject spin-polarized electrons efficiently into a nonmagnet. We have accordingly identified two key properties to be achieved by developing new magnetic materials for future spintronic devices: 1) half-metallicity at room temperature (RT) and 2) perpendicular anisotropy in nanoscale devices at RT. For the first property, five major magnetic materials are selected for their evaluation for future magnetic/spintronic device applications: 1) Heusler alloys; 2) ferrites; 3) rutiles; 4) perovskites; and 5) dilute magnetic semiconductors. These alloys have been reported or predicted to be half-metallic ferromagnets at RT. They possess a bandgap at the Fermi level EF only for its minority spins, achieving 100% spin polarization at EF. We have also evaluated L10 alloys and D022-Mn alloys for the development of a perpendicularly anisotropic ferromagnet with large spin polarization. We have listed several key milestones for each material on their functionality improvements, property achievements, device implementations, and interdisciplinary applications within 35 years time scale. The individual analyses and the projections are discussed in the following sections.

Composition dependence of magnetoresistance effect and its annealing endurance in tunnel junctions having Mn-Ga electrode with high perpendicular magnetic anisotropy

The composition dependence of the tunnel magnetoresistance (TMR) effect in Mn-Ga/MgO/CoFe magnetic tunnel junctions (MTJs) for Mn54Ga46, Mn62Ga38, and Mn71Ga29 (at. %) electrodes was investigated. An MTJ with a Mn62Ga38 electrode showed a maximum TMR ratio of 23% at 10 K and high annealing endurance up to 375 °C. The bias voltage dependence of the TMR ratio was distinct among MTJs with different Mn-Ga compositions. Here, we discuss this dependence on the basis of the difference in the Δ1 band dispersions for Mn-Ga alloys calculated by first principles.The composition dependence of the tunnel magnetoresistance (TMR) effect in Mn-Ga/MgO/CoFe magnetic tunnel junctions (MTJs) for Mn54Ga46, Mn62Ga38, and Mn71Ga29 (at. %) electrodes was investigated. An MTJ with a Mn62Ga38 electrode showed a maximum TMR ratio of 23% at 10 K and high annealing endurance up to 375 °C. The bias voltage dependence of the TMR ratio was distinct among MTJs with different Mn-Ga compositions. Here, we discuss this dependence on the basis of the difference in the Δ1 band dispersions for Mn-Ga alloys calculated by first principles.

Magnetoresistance Effect in Tunnel Junctions with Perpendicularly Magnetized D022-Mn3-δGa Electrode and MgO Barrier

The tunnel magnetoresistance (TMR) effect with a perpendicularly magnetized D022-Mn3-δGa (δ= 0.6) electrode was investigated in epitaxially grown D022-Mn3-δGa (30)/Mg (dMg)/MgO (2)/CoFe (2.5) (nm) magnetic tunnel junctions (MTJs). The maximum TMR ratio of 9.8% (22.1%) was achieved at 300 K (10 K) with dMg = 0.4 nm. The bias voltage dependence of differential conductance spectra suggests the existence of a coherent tunneling process in the MTJs. First principles calculations of band dispersion relations and tunneling transmittance in a Mn3Ga/MgO/Mn3Ga structure were also performed. The results revealed the existence of Δ1-bands in Mn3Ga and demonstrated the possibility of a coherent tunneling process existing in the MTJ.