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Featured researches published by Qiming Sun.


Applied Physics Letters | 2012

Quantitative self-calibrating lock-in carrierographic lifetime imaging of silicon wafers

Qiming Sun; Alexander Melnikov; Andreas Mandelis

Quantitative self-calibrating lock-in carrierography (LIC) imaging of crystalline silicon wafers is introduced using an InGaAs camera and a spread super-bandgap illumination laser beam. Images at several modulation frequencies and a simplified model based on photocarrier radiometric theory are used to construct the effective carrier lifetime image from the phase-frequency dependence. The phase image data at several frequencies and at selected locations on a wafer were compared to frequency scans obtained with a single-element InGaAs detector, and good agreement was found. The quantitative LIC lifetime imaging capability demonstrated in this work is self-calibrating and eliminates the requirement for calibration in conventional photoluminescence imaging.


Applied Physics Letters | 2018

Surface recombination velocity imaging of wet-cleaned silicon wafers using quantitative heterodyne lock-in carrierography

Qiming Sun; Alexander Melnikov; Andreas Mandelis; Robert Pagliaro

InGaAs-camera based heterodyne lock-in carrierography (HeLIC) is developed for surface recombination velocity (SRV) imaging characterization of bare (oxide-free) hydrogen passivated Si wafer surfaces. Samples prepared using four different hydrofluoric special-solution etching conditions were tested, and a quantitative assessment of their surface quality vs. queue-time after the hydrogen passivation process was made. The data acquisition time for an SRV image was about 3 min. A “round-trip” frequency-scan mode was introduced to minimize the effects of signal transients on data self-consistency. Simultaneous best fitting of HeLIC amplitude-frequency dependencies at various queue-times was used to guarantee the reliability of resolving surface and bulk carrier recombination/transport properties. The dynamic range of the measured SRV values was established from 0.1 to 100 m/s.


photovoltaic specialists conference | 2014

Quantitative heterodyne lock-in carrierographic imaging of silicon wafers and solar cells

Qiming Sun; Alexander Melnikov; Andreas Mandelis

InGaAs camera-based high-frequency heterodyne lock-in carrierographic (LIC) imaging of Si wafers and solar cells is introduced. The nonlinearity exponents of the photocarrier radiometric signals of the samples were measured by intensity scan. Heterodyne LIC images in a wide frequency range (0.1 - 20 kHz) were obtained and the amplitude-frequency behavior was quantitatively analyzed. A contrast inversion phenomenon was observed in high frequency images which highlights image contrast from defective regions against a fading background. High frequency LIC imaging results in high-resolution and near-subsurface information, thus having excellent prospects for fundamental research and industrial in-line non-destructive testing of photovoltaic materials and devices.


Review of Scientific Instruments | 2018

Single frequency thermal wave radar: A next-generation dynamic thermography for quantitative non-destructive imaging over wide modulation frequency ranges

Alexander Melnikov; Liangjie Chen; Diego Ramirez Venegas; Koneswaran Sivagurunathan; Qiming Sun; Andreas Mandelis; Ignacio Rojas Rodriguez

Single-Frequency Thermal Wave Radar Imaging (SF-TWRI) was introduced and used to obtain quantitative thickness images of coatings on an aluminum block and on polyetherketone, and to image blind subsurface holes in a steel block. In SF-TWR, the starting and ending frequencies of a linear frequency modulation sweep are chosen to coincide. Using the highest available camera frame rate, SF-TWRI leads to a higher number of sampled points along the modulation waveform than conventional lock-in thermography imaging because it is not limited by conventional undersampling at high frequencies due to camera frame-rate limitations. This property leads to large reduction in measurement time, better quality of images, and higher signal-noise-ratio across wide frequency ranges. For quantitative thin-coating imaging applications, a two-layer photothermal model with lumped parameters was used to reconstruct the layer thickness from multi-frequency SF-TWR images. SF-TWRI represents a next-generation thermography method with superior features for imaging important classes of thin layers, materials, and components that require high-frequency thermal-wave probing well above todays available infrared camera technology frame rates.


Physica Status Solidi (a) | 2016

Camera‐based high frequency heterodyne lock‐in carrierographic (frequency‐domain photoluminescence) imaging of crystalline silicon wafers

Qiming Sun; Alexander Melnikov; Andreas Mandelis


International Journal of Thermophysics | 2016

Quantitative Carrier Density Wave Imaging in Silicon Solar Cells Using Photocarrier Radiometry and Lock-in Carrierography

Qiming Sun; Alexander Melnikov; Andreas Mandelis


International Journal of Thermophysics | 2015

Camera-Based Lock-in and Heterodyne Carrierographic Photoluminescence Imaging of Crystalline Silicon Wafers

Qiming Sun; Alexander Melnikov; Andreas Mandelis


Solar Energy Materials and Solar Cells | 2018

Colloidal quantum dot solar cell electrical parameter non-destructive quantitative imaging using high-frequency heterodyne lock-in carrierography and photocarrier radiometry

Lilei Hu; Mengxia Liu; Andreas Mandelis; Qiming Sun; Alexander Melnikov; Edward H. Sargent


International Journal of Thermophysics | 2012

Theoretical Analysis of Diffraction Efficiency of Photocarrier Grating

Qiming Sun; Yafei Wang; Chunming Gao; Y. Wan


Journal of Physical Chemistry C | 2018

Temperature- and Size-Dependent Exciton Dynamics in PbS Colloidal Quantum Dot Thin Films Using Combined Photoluminescence Spectroscopy and Photocarrier Radiometry

Jing Wang; Andreas Mandelis; Qiming Sun; Bincheng Li; Chunming Gao

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Chunming Gao

University of Electronic Science and Technology of China

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Yafei Wang

University of Electronic Science and Technology of China

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Hao Cui

University of Electronic Science and Technology of China

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Jing Wang

University of Electronic Science and Technology of China

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Bincheng Li

Chinese Academy of Sciences

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Junyan Liu

Harbin Institute of Technology

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Y. Wan

University of Electronic Science and Technology of China

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