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晴夫 砂川

NEC

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Archive | 1998

Iii-v compound semiconductor film and growth method, gan system semiconductor film and its formation, gan system semiconductor stacked structure and its formation, and gan system semiconductor element and its manufacture

Haruo Sunakawa; Akira Usui; 晴夫 砂川; 彰 碓井

Archive | 2001

Ground substrate for crystal growth and method of producing substrate using the same

Yoshinari Matsumoto; Haruo Sunakawa; Akira Usui; 良成 松本; 晴夫 砂川; 彰 碓井

Archive | 1999

GaN CRYSTAL FILM, AND III-FAMILY ELEMENT NITRIDE SEMICONDUCTOR WAFER AND ITS MANUFACTURE

Yoshinari Matsumoto; Masashi Mizuta; Akira Sakai; Haruo Sunakawa; Akira Usui; 良成 松本; 正志 水田; 晴夫 砂川; 彰 碓井; 酒井 朗

Archive | 2002

Group-iii nitride independent substrate, semiconductor device using the same, and method for manufacturing them

Haruo Sunakawa; Akira Usui; Atsushi Yamaguchi; 敦史 山口; 晴夫 砂川; 彰 碓井

Archive | 1998

MANUFACTURE OF III-V NITRIDE COMPOUND SEMICONDUCTOR

Haruo Sunakawa; Akira Usui; 晴夫 砂川; 彰 碓井

Archive | 1998

METHOD FOR GROWING GROUP III-V COMPOUND SEMICONDUCTOR AND MANUFACTURE OF SEMICONDUCTOR LIGHT EMITTING DEVICE USING THE METHOD

Naotaka Kuroda; Chiaki Sasaoka; Haruo Sunakawa; 晴夫 砂川; 千秋 笹岡; 尚孝 黒田

Archive | 2000

Gab SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD

Haruo Sunakawa; Akira Usui; 晴夫 砂川; 彰 碓井

Archive | 2000

Method of manufacturing nitride-based semiconductor layer

Haruo Sunakawa; Akira Usui; 晴夫 砂川; 彰 碓井

Archive | 2009

Group iii nitride semiconductor substrate and method for producing the same

Hitoshi Sasaki; Haruo Sunakawa; Norihiko Washimi; Kazutomi Yamamoto; 斉 佐々木; 一富 山本; 晴夫 砂川; 紀彦 鷲見

Archive | 2003

GROWTH METHOD OF GaN SEMICONDUCTOR LAYER, SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD USING THE SAME, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

Yujiro Ishihara; Haruo Sunakawa; Akira Usui; 裕次郎 石原; 晴夫 砂川; 彰 碓井

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彰 碓井

NEC

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Haruo Sunakawa

NEC

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Akira Usui

NEC

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千秋 笹岡

NEC

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Kazutomi Yamamoto

Panasonic

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明隆 木村

NEC

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Chiaki Sasaoka

NEC

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Akira Sakai

NEC

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Akitaka Kimura

NEC

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Atsushi Yamaguchi

NEC

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