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彰 碓井

NEC

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Archive | 1998

Iii-v compound semiconductor film and growth method, gan system semiconductor film and its formation, gan system semiconductor stacked structure and its formation, and gan system semiconductor element and its manufacture

Haruo Sunakawa; Akira Usui; 晴夫 砂川; 彰 碓井

Archive | 2002

Iii group nitride semiconductor substrate, and method for manufacturing it

Yuichi Oshima; Masatomo Shibata; Akira Usui; 祐一 大島; 真佐知 柴田; 彰 碓井

Archive | 2002

GROUP III-V NITRIDE-BASED SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING THE SAME

Yuichi Oshima; Masatomo Shibata; Akira Usui; 祐一 大島; 真佐知 柴田; 彰 碓井

Archive | 2001

Ground substrate for crystal growth and method of producing substrate using the same

Yoshinari Matsumoto; Haruo Sunakawa; Akira Usui; 良成 松本; 晴夫 砂川; 彰 碓井

Archive | 2002

Gallium nitride crystalline substrate and method for manufacturing the same

Yuichi Oshima; Masatomo Shibata; Akira Usui; 祐一 大島; 真佐知 柴田; 彰 碓井

Archive | 1999

GaN CRYSTAL FILM, AND III-FAMILY ELEMENT NITRIDE SEMICONDUCTOR WAFER AND ITS MANUFACTURE

Yoshinari Matsumoto; Masashi Mizuta; Akira Sakai; Haruo Sunakawa; Akira Usui; 良成 松本; 正志 水田; 晴夫 砂川; 彰 碓井; 酒井 朗

Archive | 2002

Group-iii nitride independent substrate, semiconductor device using the same, and method for manufacturing them

Haruo Sunakawa; Akira Usui; Atsushi Yamaguchi; 敦史 山口; 晴夫 砂川; 彰 碓井

Archive | 1998

MANUFACTURE OF III-V NITRIDE COMPOUND SEMICONDUCTOR

Haruo Sunakawa; Akira Usui; 晴夫 砂川; 彰 碓井

Archive | 1996

Vapor growth method of low-resistance p-type gallium nitride-based compound semiconductor

Yasunori Mochizuki; Masaaki Nidou; Akira Usui; 正明 仁道; 康則 望月; 彰 碓井

Archive | 2000

Gab SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD

Haruo Sunakawa; Akira Usui; 晴夫 砂川; 彰 碓井

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Akira Usui

NEC

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晴夫 砂川

NEC

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Haruo Sunakawa

NEC

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Masatomo Shibata

Hitachi

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Yuichi Oshima

Hitachi

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千秋 笹岡

NEC

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明隆 木村

NEC

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Akira Sakai

NEC

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Atsushi Yamaguchi

NEC

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Kazutomi Yamamoto

Panasonic

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