Quentin C. Kessel

New uses of ion accelerators

1. Ion-Excited X-Ray Analysis of Environmental Samples.- I. Introduction.- II. General Considerations for Ion Beam Analysis of Environmental Samples.- III. Formalism and Optimization.- IV. The UCD/ARB Aerosol Analysis System.- A. The Primary Ion Beam.- B. Detection of X-Rays.- C. Data Acquisition and Reduction.- D. System Calibration.- E. Target Preparation and Matrix Effects.- F. Estimation of Analytical Costs.- G. Validation of System Operations.- V. Ion-Excited X-Ray Analysis Programs.- Appendix (Forward Scattering).- Acknowledgments.- References.- 2: Material Analysis by Nuclear Backscattering.- A. Introduction.- General Comments on Nuclear Backscattering.- Appendix (Numerical Examples).- References.- B. Applications.- I. Introduction.- II. Ion Implantation.- III. Thin Films: Growth and Deposition.- IV. Thin Film Reactions: Interdiffusion and Compound Formation.- V. Bulk Effects: Composition, Diffusion and Solubility.- VI. Concluding Remarks.- Acknowledgments.- References.- Formalism.- 1. Three Basic Concepts in Backscattering.- A. Backscattering Kinematic Factor Mass ? Analysis.- B. Differential Scattering Cross Section ? Quantitative Analysis.- C. Energy Loss ? Depth Analysis.- 2. Depth Scale in Backscattering Analysis [S].- A. Depth Scale in Backscattering Analysis.- B. Surface Approximation.- C. Linear Approximation.- 3. Height of an Energy Spectrum.- A. Surface Approximation for Spectrum Height.- B. Thick Target Yield.- C. Backscattering Yield of a Thin Film.- 4. Applications of Backscattering from Elemental Targets.- A. Surface Contamination and Ion Implantation.- B. Doping Level of a Bulk Sample.- C. Film Thickness Measurement and dE/dx Measurements.- D. Yield Formula and dE/dx Measurements.- E. Differential Scattering Cross Section Measurement.- 5. Application of Backscattering to Compound Targets.- A. Thin Film Analysis.- B. Thick Compound Targets.- C. Analysis on Composition Varying Continuously with Depth.- Appendix 1. Notations.- Appendix 2. Formulae.- Appendix 3. Sources for dE/dx Information.- References.- 3: Material Analysis by Means of Nuclear Reactions.- Charged Particle Activation Analysis.- Charged Particle Activation Analysis - Examples.- Prompt Radiation Analysis.- Nonresonant Nuclear Reactions - Gamma Rays Observed.- Nonresonant Nuclear Reactions - Nuclear Particles Observed.- Resonant Nuclear Reactions.- Summary.- Acknowledgment.- References.- 4: Lattice Location of Impurities in Metals and Semiconductors.- I. Introduction.- II. Impurity Detection.- III. The Channeling Technique.- 1. Channeling Concept.- 2. Experimental Technique.- IV. Lattice Location Analysis.- V. Examples.- 1. Substitutional Impurities.- 2. Nearly Substitutional Impurities.- 3. Interstitial Impurities.- 4. High Impurity Concentrations.- 5. Radiation-Induced Change in Impurity Sites.- VI. Summary of the Literature on Channeling Lattice Location Data.- VII. Limitations.- VIII. Conclusions.- References.- 5: Ion Implantation in Metals.- Historical Perspective.- Friction and Wear.- Corrosion.- 1. Oxides with Anion Defects.- 2. Oxides with Cation Defects.- Ion Backscattering.- Titanium and Stainless Steel.- Zirconium.- Aluminum.- Copper.- Aqueous Corrosion.- Practical Applications in Corrosion.- Electrochemistry and Catalysis.- Implantation Metallurgy.- Equipment for the Ion Implantation of Metals.- Conclusions.- References.- 6: Ion Implantation in Superconductors.- Definition of the Superconducting Parameters.- Influence of Radiation Damage on the Superconducting Properties.- a. Non-Transition Metals.- b. Transition Metals.- c. Transition Metal Alloys.- d. Superconductors with A-15 and NaCl-Structure.- e. Transition Metal Layer Compounds.- f. Quantitative Estimation of Damage in Superconductors.- Influence of Implanted Ions on the Superconducting Transition Temperature.- a. Magnetic Impurities in Non Transition Metals.- b. Pd-, Pd-Noble Metal Alloy, -Hydrogen System.- c. Ion Implanted Transition Metal Systems.- d. Aluminum Based Ion Implanted Systems.- Application to Superconducting Devices.- Conclusions.- References.- 7: Ion-Induced X-Rays from Gas Collisions.- 1. Introduction.- 2. Collision Models.- 2.1. Survey of Models.- 2.2. Coulomb Ionization.- 2.3. The Molecular-Orbital Model.- 3. Measurements of Inner-Shell Excitations.- 3.1. Introduction.- 3.2. Theory of Energy-Loss Measurements.- 3.3. X-Ray and Electron Emission.- 3.4. Typical Apparatus-Ionization and Inelastic Energy Loss.- 3.5. Scattered- Ion-X-Ray/Electron Coincidence Apparatus.- 4. Discussion of Typical Data.- 4.1. Ionization States.- 4.2. Inelastic Energy Loss.- 4.3. Electron Emission Cross Sections.- 4.4. Fluorescence Yield Effects.- 4.5. X-Ray-Scattered-Ion Coincidence Data.- 4.6. X-Rays from Highly Stripped Fast Ion Beams.- 5. Summary.- References.- 8: Ion-Induced X-Rays in Solids.- 1. Introduction.- 2. Accelerators and Target Chambers.- 2.1. Ion Sources.- 2.2. Target Chambers.- 3. The Detection and Analysis of X-Rays.- 3.1. The Gas Flow Proportional Counter.- 3.2. The Si(Li) Detector.- 3.3. The X-Ray Crystal or Grating Spectrometer.- 4. The Use of Protons and Helium Ions to Generate X-Rays from Solid Targets.- 4.1. Current Areas of Fundamental Interest.- 4.2. Applications.- 5. The Use of Heavy Ions to Generate X-Rays from Solid Targets.- 5.1. General Background.- 5.2. Physical Processes.- 5.3. Applications.- 6. Conclusions.- References.- Author Index.