R.A. McTaggart
Raytheon
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Publication
Featured researches published by R.A. McTaggart.
ieee gallium arsenide integrated circuit symposium | 1995
K.Y. Hur; R.A. McTaggart; B.W. LeBlanc; William E. Hoke; P. J. Lemonias; A.B. Miller; Thomas E. Kazior; L.M. Aucoin
A double recessed T-gate process has been successfully utilized to increase gate-to-drain breakdown voltages of double pulse doped AlInAs/GaInAs/InP HEMTs. By varying lateral channel dimensions, breakdown voltages in the range 11-19 V can be tailored with maximum channel currents in the range 450-600 mA/mm. This combination of high breakdown voltages and high channel currents indicate that the double recess process is a promising approach for high power applications.
IEEE Electron Device Letters | 1995
Katerina Y. Hur; R.A. McTaggart; Marco P. Ventresca; Ratana Wohlert; Lisa M. Aucoin; Thomas E. Kazior
High gain, millimeter wave AlInAs/GaInAs/InP HEMTs with individually grounded source finger vias have been fabricated for the first time using a high resolution Cl/sub 2/:HBr:BCl/sub 3/:Ar RIE process. For comparison of device characteristics at millimeter wave frequencies, HEMTs with end source vias were also fabricated on the same wafer. Fixtured RF characterization has revealed significant reduction in source inductance and reverse transmission in addition to higher gain on devices with individual source vias. These superior RF characteristics exhibited by the HEMT with individually grounded source finger vias illustrate the importance of the via technology for high performance InP-based millimeter wave system applications.<<ETX>>
international microwave symposium | 1995
K.Y. Hur; R.A. McTaggart; M.P. Ventresca; R. Wohlert; L. Aucoin; Thomas E. Kazior
Millimeter wave AlInAs/GaInAs/InP HEMTs with individually grounded source finger vias and end source vias have been fabricated and characterized. Although DC IV characteristics of the HEMTs with individually grounded source finger vias and end source vias were similar, RF measurements yielded higher small signal gain on the HEMT with individually grounded source finger vias. Power measurements at 44 GHz further revealed that the HEMT with individually grounded source finger vias produced higher output power, power added efficiency, and associated gain compared to the HEMT with end source vias.<<ETX>>
Proceedings of 1994 IEEE GaAs IC Symposium | 1994
Katerixla Y. Hur; R.A. McTaggart; Thomas E. Kazior
A Cl/sub 2/:HBr:BCl/sub 3/:Ar-based reactive ion etch process capable of producing high resolution via holes in InP has been developed. Tapered sidewall profiles are obtained using this process as a result of controlled photoresist mask erosion at an optimized etch condition. To demonstrate feasibility of this process for millimeter wave device applications, single-doped AlInAs/GaInAs/InP HEMTs with individually grounded source finger vias have been fabricated.
Archive | 2001
William E. Hoke; Katerina Hur; R.A. McTaggart
Electronics Letters | 1996
K.Y. Hur; K.T. Hetzler; R.A. McTaggart; D.W. Vye; P. J. Lemonias; William E. Hoke
Electronics Letters | 1995
K.Y. Hur; R.A. McTaggart; A.B. Miller; William E. Hoke; P. J. Lemonias; L.M. Aucoin
Archive | 1999
William E. Hoke; Katerina Hur; R.A. McTaggart
Electronics Letters | 1995
K.Y. Hur; R.A. McTaggart; M.P. Ventresca; R. Wohlert; William E. Hoke; P. J. Lemonias; Thomas E. Kazior; L. Aucoin
Electronics Letters | 1997
K.Y. Hur; K.T. Hetzler; R.A. McTaggart; P. J. Lemonias; William E. Hoke
