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Dive into the research topics where R. Eguchi is active.

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Featured researches published by R. Eguchi.


Physical Review Letters | 2010

Strong valence fluctuation in the quantum critical heavy fermion superconductor β-YbAlB4: a hard x-ray photoemission study.

Mario Okawa; Masaharu Matsunami; K. Ishizaka; R. Eguchi; M. Taguchi; A. Chainani; Y. Takata; Makina Yabashi; Kenji Tamasaku; Yoichi Nishino; Tetsuya Ishikawa; K Kuga; Naoki Horie; Satoru Nakatsuji; S. Shin

Electronic structures of the quantum critical superconductor β-YbAlB4 and its polymorph α-YbAlB4 are investigated by using bulk-sensitive hard x-ray photoemission spectroscopy. From the Yb 3d core level spectra, the values of the Yb valence are estimated to be ∼2.73 and ∼2.75 for α- and β-YbAlB4, respectively, thus providing clear evidence for valence fluctuations. The valence band spectra of these compounds also show Yb2+ peaks at the Fermi level. These observations establish an unambiguous case of a strong mixed valence at quantum criticality for the first time among heavy fermion systems, calling for a novel scheme for a quantum critical model beyond the conventional Doniach picture in β-YbAlB4.


Physical Review Letters | 2008

Revisiting the valence-band and core-level photoemission spectra of NiO.

M. Taguchi; M. Matsunami; Y. Ishida; R. Eguchi; A. Chainani; Yasutaka Takata; Makina Yabashi; Kenji Tamasaku; Yoshinori Nishino; Tetsuya Ishikawa; Y. Senba; Hirotada Ohashi; Shik Shin

We have reexamined the valence-band (VB) and core-level electronic structure of NiO by means of hard and soft x-ray photoemission spectroscopies. The spectral weight of the lowest energy state was found to be enhanced in the bulk sensitive Ni 2p core-level spectrum. A configuration-interaction model including a bound state screening has shown agreement with the core-level spectrum and off- and on-resonance VB spectra. These results identify the lowest energy states in the core-level and VB spectra as the Zhang-Rice (ZR) doublet bound states, consistent with the spin-fermion model and recent ab initio calculations within dynamical mean-field theory. The results indicate that the ZR character first ionization (the lowest hole-addition) states are responsible for transport properties in NiO and doped NiO.


Physical Review B | 2008

Photoemission evidence for a Mott-Hubbard metal-insulator transition in VO2

R. Eguchi; M. Taguchi; M. Matsunami; K. Horiba; Kota Yamamoto; Y. Ishida; A. Chainani; Y. Takata; Makina Yabashi; D. Miwa; Yoshinori Nishino; Kenji Tamasaku; Tetsuya Ishikawa; Y. Senba; Hirotada Ohashi; Yuji Muraoka; Zenji Hiroi; Shik Shin

The temperature (T) dependent metal-insulator transition (MIT) in VO2 is investigated using bulk sensitive hard x-ray (� 8 keV) valence band, core level, and V 2p-3d resonant photoemission spectroscopy (PES). The valence band and core level spectra are compared with full-multiplet cluster model calculations including a coherent screening channel. Across the MIT, V 3d spectral weight transfer from the coherent (d 1 C final) states at Fermi level to the incoherent (d 0 +d 1 L final) states, corresponding to the lower Hubbard band, lead to gap-formation. The spectral shape changes in V 1s and V 2p core levels as well as the valence band are nicely reproduced from a cluster model calculations, providing electronic structure parameters. Resonant-PES finds that the d 1 L states resonate across the V 2p-3d threshold in addition to the d 0 and d 1 C states. The results support a Mott-Hubbard transition picture for the first order MIT in VO2. PACS numbers: 79.60.-i, 71.30.+h VO2, a d 1 electron system, exhibits a sharp first-order metal-insulator transition (MIT) as a function of temperature (T), at TMI = 340 K. 1 The high-T metal phase has a rutile (R) structure, while the low-T insulating phase has a monoclinic (M1) structure with zig-zag type pairing of V atoms along the c-axis. 2 Magnetically, the metallic R phase shows enhanced susceptibility (�) with an effective mass m ∗ /m � 6, while the insulating M1 phase is non


Physical Review Letters | 2008

Coherent and Incoherent Excitations of Electron-Doped SrTiO3

Y. Ishida; R. Eguchi; Masaharu Matsunami; Koji Horiba; M. Taguchi; Ashish Chainani; Y. Senba; Haruhiko Ohashi; Hiromichi Ohta; Shik Shin

Resonant photoemission at the Ti 2p and O 1s edges on a Nb-doped SrTiO(3) thin film revealed that the coherent state (CS) at the Fermi level (E(F)) had a mainly Ti 3d character whereas the incoherent in-gap state (IGS) positioned approximately 1.5 eV below E(F) had a mixed character of Ti 3d and O 2p states. This indicates that the IGS is formed by a spectral-weight transfer from the CS and subsequent spectral-weight redistribution through d-p hybridization. We discuss the evolution of the excitation spectrum with 3d band filling and rationalize the IGS through a mechanism similar to that proposed by Haldane and Anderson.


Physical Review Letters | 2008

Recoil Effect of Photoelectrons in the Fermi Edge of Simple Metals

Yasutaka Takata; Yosuke Kayanuma; S. Oshima; Sei’ichi Tanaka; Makina Yabashi; Kenji Tamasaku; Yoshinori Nishino; M. Matsunami; R. Eguchi; A. Chainani; M. Oura; Tomoyuki Takeuchi; Y. Senba; Hirotada Ohashi; Shik Shin; Tetsuya Ishikawa

High energy resolution photoelectron spectroscopy of conduction electrons in the vicinity of the Fermi edge in Al and Au at excitation energies of 880 and 7940 eV was carried out using synchrotron radiation. For the excitation energy of 7940 eV, the observed Fermi energy of Al shows a remarkable shift to higher binding energy as compared with that of Au, with accompanying broadening. This is due to the recoil effect of the emitted photoelectrons. The observed spectra are well reproduced by a simple model of Bloch electrons based on the isotropic Debye model.


Materials Science and Engineering B-advanced Functional Solid-state Materials | 2001

Magnetism and metal-insulator transition in III-V based diluted magnetic semiconductors

Shingo Katsumoto; Takashi Hayashi; Yoshiaki Hashimoto; Yasuhiro Iye; Yoichi Ishiwata; Masamitsu Watanabe; R. Eguchi; T. Takeuchi; Yoshihisa Harada; S. Shin; Kazuhiko Hirakawa

Abstract We report experiments on the magnetism and the transport in III–V based diluted magnetic semiconductors (Ga,Mn)As and (In,Mn)As. Heat treatment (annealing) at comparatively low temperatures (slightly above the growth temperature) is unexpectedly found to be effective to improve the ferromagnetism and the metallic conduction. IR optical conductivity measurements and soft X-ray absorption spectroscopy reveal that the double exchange model is a convenient picture to describe the ferromagnetism. The transport in the vicinity of metal–insulator critical point was studied in detail by using the low-temperature annealing method.


Physical Review B | 2011

Femtosecond core-level photoemision spectroscopy on 1T-TaS2 using a 60-eV laser source

K. Ishizaka; T. Kiss; T. Yamamoto; Y. Ishida; T. Saitoh; Masaharu Matsunami; R. Eguchi; T. Ohtsuki; A. Kosuge; Teruto Kanai; M. Nohara; H. Takagi; Shinji Watanabe; Shik Shin

Time-resolved photoelectron spectroscopy (trPES) can directly detect transient electronic structure, thus bringing out its promising potential to clarify nonequilibrium processes arising in condensed matters. Here we report the result of core-level (CL) trPES on 1T-TaS2, realized by developing a high-intensity 60 eV laser obtained by high-order harmonic (HH) generation. Ta4f CL-trPES offers the transient amplitude of the charge-density-wave (CDW), via the site-selective and real-time observation of Ta electrons. The present result indicates an ultrafast photoinduced melting and recovery of CDW amplitude, followed by a peculiar long-life oscillation (i.e. collective amplitudon excitation) accompanying the transfer of 0.01 electrons among adjacent Ta atoms. CL-trPES offers a broad range of opportunities for investigating the ultrafast atom-specific electron dynamics in photo-related phenomena of interest.


Physical Review Letters | 2007

Observation of a superconducting gap in boron-doped diamond by laser-excited photoemission spectroscopy

K. Ishizaka; R. Eguchi; S. Tsuda; Takayoshi Yokoya; A. Chainani; T. Kiss; T. Shimojima; Tadashi Togashi; Shuntaro Watanabe; Chuangtian Chen; C. Zhang; Yoshihiko Takano; M. Nagao; Isao Sakaguchi; T. Takenouchi; Hiroshi Kawarada; Shik Shin

We investigate the temperature (T)-dependent low-energy electronic structure of a boron-doped diamond thin film using ultrahigh resolution laser-excited photoemission spectroscopy. We observe a clear shift of the leading edge below T=11 K, indicative of a superconducting gap opening (Delta approximately 0.78 meV at T=4.5 K). The gap feature is significantly broad and a well-defined quasiparticle peak is lacking even at the lowest temperature of measurement (=4.5 K). We discuss our results in terms of disorder effects on the normal state transport and superconductivity in this system.


Physical Review Letters | 2010

Evidence for a correlated insulator to antiferromagnetic metal transition in CrN.

P. A. Bhobe; Ashish Chainani; M. Taguchi; Tomoyuki Takeuchi; R. Eguchi; Masaharu Matsunami; K. Ishizaka; Yasutaka Takata; M. Oura; Y. Senba; Hirotada Ohashi; Yoshinori Nishino; Makina Yabashi; Kenji Tamasaku; Tetsuya Ishikawa; Koshi Takenaka; Hidenori Takagi; Shik Shin

We investigate the electronic structure of chromium nitride (CrN) across the first-order magnetostructural transition at T(N)∼286  K. Resonant photoemission spectroscopy (PES) shows a gap in the 3d partial density of states at the Fermi level and an on-site Coulomb energy U∼4.5  eV, indicating strong electron-electron correlations. Bulk-sensitive high-resolution (6 meV) laser PES reveals a clear Fermi edge indicating an antiferromagnetic metal below T(N). Hard x-ray Cr 2p core-level PES shows T-dependent changes across T(N) which originate from screening due to coherent states as substantiated by cluster model calculations using the experimentally observed U. Electrical resistivity confirms an insulator above T(N) (E(g)∼70  meV) becoming a disordered metal below T(N). Thus, CrN transforms from a correlated insulator to an antiferromagnetic metal, coupled to the magnetostructural transition.


New Journal of Physics | 2014

Time-resolved HAXPES at SACLA: probe and pump pulse-induced space-charge effects

Lars-Philip Oloff; M. Oura; K. Rossnagel; Ashish Chainani; Masaharu Matsunami; R. Eguchi; T. Kiss; Yasuhiro Nakatani; Takashi Yamaguchi; Jun Miyawaki; M. Taguchi; Kohei Yamagami; Tadashi Togashi; Tetsuo Katayama; Kanade Ogawa; Makina Yabashi; Tetsuya Ishikawa

Time-resolved hard x-ray photoelectron spectroscopy (trHAXPES) is established using the x-ray free-electron laser SACLA. The technique extends time-resolved photoemission into the hard x-ray regime and, as a core-level spectroscopy, combines element and atomic-site specificity and sensitivity to the chemical environment with femtosecond time resolution and bulk (sub-surface) sensitivity. The viability of trHAXPES using 8 keV x-ray free-electron-laser radiation is demonstrated by a systematic investigation of probe and pump pulse-induced vacuum space-charge effects on the V 1s emission of VO2 and the Ti 1s emission of SrTiO3. The time and excitation energy dependencies of the measured spectral shifts and broadenings are compared to the results of N-body numerical simulations and simple analytic (mean-field) models. Good agreement between the experimental and calculated results is obtained. In particular, the characteristic temporal evolution of the pump pulse-induced spectral shift is shown to provide an effective means to determine the temporal overlap of pump and probe pulses. trHAXPES opens a new avenue in the study of ultrafast atomic-site specific electron and chemical dynamics in materials and at buried interfaces.

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Y. Senba

Hiroshima University

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M. Taguchi

Nara Institute of Science and Technology

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