R. Fletcher

Critical behaviour of thermopower and conductivity at the metal-insulator transition in high-mobility Si-MOSFETs

This paper reports thermopower and conductivity measurements through the metal-insulator transition for two-dimensional electron gases in high-mobility Si-MOSFETs. At low temperatures both thermopower and conductivity show critical behaviour as functions of the electron density. When approaching the critical density from the metallic side the diffusion thermopower appears to diverge and the conductivity vanishes. On the insulating side the thermopower shows an upturn with decreasing temperature. These features have much in common with those expected for an Anderson transition.

Phonon-drag thermopower and weak localization

Previous experimental work on a two-dimensional (2D) electron gas in a Si-on-sapphire device led to the conclusion that both conductivity and phonon drag thermopower

The effect of second subband occupation on the thermopower of a high mobility GaAs-Al0.33Ga0.67As heterojunction

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Thermopower and weak localization

are affected to the same relative extent by weak localization. The present paper presents further experimental and theoretical results on these transport coefficients for two very low-mobility 2D electron gases in

Thermoelectric properties of GaAs/Ga1−xAlxAs heterojunctions in the fractional quantum Hall regime

\ensuremath{\delta}

The thermopower of 2D electron gases in AlxGa1-xAs/GaAs heterostructures over a wide temperature range

-doped

Individual band mobilities in a double quantum well

{\mathrm{G}\mathrm{a}\mathrm{A}\mathrm{s}/\mathrm{G}\mathrm{a}}_{x}{\mathrm{Al}}_{1\ensuremath{-}x}\mathrm{As}

The thermopower of a high-mobility Si-MOSFET around the metal-insulator transition

quantum wells. The experiments were carried out in the temperature range 3\char21{}7 K, where phonon drag dominates the thermopower and, in contrast to the previous work, the changes observed in the thermopower due to weak localization were found to be an order of magnitude less than those in the conductivity. A theoretical framework for phonon drag thermopower in 2D and 3D semiconductors is presented that accounts for this insensitivity of

Oscillations in the low-field diffusion thermopower of a 2D electron gas

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An investigation into the possible effects of inelastic inter-Landau level scattering on the resistivity and thermopower of a two-dimensional electron gas

to weak localization. It also provides transparent physical explanations of many previous experimental and theoretical results.