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Dive into the research topics where R. G. Dias is active.

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Featured researches published by R. G. Dias.


Superconductor Science and Technology | 2011

Frustrated multiband superconductivity

R. G. Dias; A. M. Marques

We show that a clean multiband superconductor may display one or several phase transitions with increasing temperature from or to chiral superconducting states with broken time-reversal symmetry with continuous evolution of the relative phases of the superconducting order parameters. These transitions may occur when more than two bands are involved in the formation of the superconducting phase and when the number of repulsive interband interactions is odd. These transitions are signalled by slope changes in the temperature dependence of the superconducting gaps. In the case of quasi-2D superconductors, such transitions also occur with increasing in-plane magnetic field.


Physical Review B | 2000

Finite-temperature transport in finite-size Hubbard rings in the strong-coupling limit

N. M. R. Peres; R. G. Dias; P. D. Sacramento; J. M. P. Carmelo

We study the current, the curvature of levels, and the finite temperature charge stiffness, D(T,L), in the strongly correlated limit, U>>t, for Hubbard rings of L sites, with U the on-site Coulomb repulsion and t the hopping integral. Our study is done for finite-size systems and any band filling. Up to order t we derive our results following two independent approaches, namely, using the solution provided by the Bethe ansatz and the solution provided by an algebraic method, where the electronic operators are represented in a slave-fermion picture. We find that, in the U=\infty case, the finite-temperature charge stiffness is finite for electronic densities, n, smaller than one. These results are essencially those of spinless fermions in a lattice of size L, apart from small corrections coming from a statistical flux, due to the spin degrees of freedom. Up to order t, the Mott-Hubbard gap is \Delta_{MH}=U-4t, and we find that D(T) is finite for n<1, but is zero at half-filling. This result comes from the effective flux felt by the holon excitations, which, due to the presence of doubly occupied sites, is renormalized to \Phi^{eff}=\phi(N_h-N_d)/(N_d+N_h), and which is zero at half-filling, with N_d and N_h being the number of doubly occupied and empty lattice sites, respectively. Further, for half-filling, the current transported by any eigenstate of the system is zero and, therefore, D(T) is also zero.


Archive | 2011

Carbon Nanotube Based Magnetic Tunnel Junctions (MTJs) for Spintronics Application

Elby Titus; Rahul Krishna; José Grácio; Manoj K. Singh; A. L. Ferreira; R. G. Dias

Spintronics devices exploiting the spin of the electron [1-10] are prepared to revolutionise the electronics industry. The significance of this new generation device is faster memory and lower power consumption at low electron density. The late 20th century has been considered as an era of microelectronics. However, the avalanche growth of microelectronics is a major threat to Moore’s law and spintronics may be a solution for it. From the first transistor to the signally powerful microprocessor in our recent computers, most electronic devices have employed circuits that express data as binary digits, or bits (1 and 0) represented by the existence or absence of electric charge. Unlike microelectronics, spintronics exploits spin (spin up ↑ and spin down ↓) of the electron to carry information between devices. The discovery of Giant Magnetoresistance (GMR) by Nobel Prize winners Albert Fert and Peter Grunberg had actually led to the birth of novel field spintronics [11]. Currently, most of the existing spintronic devices [12] are based on metallic systems such as magnetic tunnel junctions (MTJs) and single electron transistor [13]. On the other hand, a wealth of intriguing spin phenomena has been observed in nanoscale materials [14]. This triggered an extensive research effort on spin transport in nanoscale MTJs and other interesting phenomena were realised. One of the most important phenomena is tunnel magnetoresistance (TMR) of the MTJs. A MTJ is composed of two ferromagnetic conducting layers separated by an ultra-thin insulating layer [15-20]. The TMR was first demonstrated by M. Julliere [21]. Yakushiji et al. [22] experimentally demonstrated the influence of spin conduction on TMR. The enhancement and oscillation of TMR in ferromagnetic multiple junctions have been predicted by several authors [23-30]. However, there have been only a few experiments on spin-dependent single electron tunnelling (SET) to date [31-36] due to the difficulty in fabricating appropriate sample structures for spin-dependent SET. The desire to build spintronic devices that show larger spin dependent phenomena has led many researchers to combine single electron tunneling (SET) and spin dependent electron tunneling (SDT). The charge quantization in low capacitance magnetic tunnel junctions


Journal of Magnetism and Magnetic Materials | 2015

Magnetic phase diagram of the Hubbard model in the Lieb lattice

J. D. Gouveia; R. G. Dias

Abstract We study the mean-field phase diagram of the repulsive Hubbard model in the Lieb lattice. Far from half-filling, the most stable phases are paramagnetism for low on-site interaction U/t and ferromagnetism for high U/t, as in the case of the mean-field phase diagram of the square lattice Hubbard model obtained by Dzierzawa (1991) [1] . At half-filling, the ground state was found to be ferrimagnetic [a ( π , π ) spiral phase], in agreement with a theorem by Lieb (1989) [2] . The total magnetization approaches Liebs prediction as U/t becomes large. As we move away from half-filling, this ferrimagnetic phase becomes a ( q 1 , q 1 ) spiral phase with q 1 ≈ π and then undergoes a series of first-order phase transitions, ( q 1 , q 1 ) → ( q 1 , q 2 ) → ( q 1 , 0 ) , with q 2 ≈ π / 2 , before becoming ferromagnetic at large U/t or paramagnetic at low U/t.


Scientific Reports | 2016

Perversions with a twist.

Pedro Emanuel Santos Silva; Joao L. Trigueiros; A. C. Trindade; Ricardo de Matos Simoes; R. G. Dias; M. H. Godinho; Fernao Vistulo de Abreu

Perversions connecting two helices with symmetric handedness are a common occurrence in nature, for example in tendrils. These defects can be found in our day life decorating ribbon gifts or when plants use tendrils to attach to a support. Perversions arise when clamped elastic filaments coil into a helical shape but have to conserve zero overall twist. We investigate whether other types of perversions exist and if they display different properties. Here we show mathematically and experimentally that a continuous range of different perversions can exist and present different geometries. Experimentally, different perversions were generated using micro electrospun fibres. Our experimental results also confirm that these perversions behave differently upon release and adopt different final configurations. These results also demonstrate that it is possible to control on demand the formation and shape of microfilaments, in particular, of electrospun fibres by using ultraviolet light.


Scientific Reports | 2015

Origami rules for the construction of localized eigenstates of the Hubbard model in decorated lattices.

R. G. Dias; J. D. Gouveia

We present a method of construction of exact localized many-body eigenstates of the Hubbard model in decorated lattices, both for U = 0 and U → ∞. These states are localized in what concerns both hole and particle movement. The starting point of the method is the construction of a plaquette or a set of plaquettes with a higher symmetry than that of the whole lattice. Using a simple set of rules, the tight-binding localized state in such a plaquette can be divided, folded and unfolded to new plaquette geometries. This set of rules is also valid for the construction of a localized state for one hole in the U → ∞ limit of the same plaquette, assuming a spin configuration which is a uniform linear combination of all possible permutations of the set of spins in the plaquette.


Physical Review B | 2011

Interacting spinless fermions in a diamond chain

A. A. Lopes; R. G. Dias

We study spinless fermions in a flux threaded AB


Solid State Communications | 1996

Superconducting upper critical field near a 2D van Hove singularity

R. G. Dias; J. M. Wheatley

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Physical Review B | 2014

Conductance through geometrically frustrated itinerant electronic systems

A. A. Lopes; B. A. Z. António; R. G. Dias

chain taking into account nearest-neighbor Coulomb interactions. The exact diagonalization of the spinless AB


Physical Review B | 2017

Multihole edge states in Su-Schrieffer-Heeger chains with interactions

A. M. Marques; R. G. Dias

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Nuno Lau

University of Aveiro

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A. A. Lopes

University of Freiburg

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