R. Gudaitis

Optical properties of the undoped and SiOx doped DLC films

In present study DLC films were deposited by direct ion beam deposition. Hexamethyldisiloxane vapor and hydrogen gas mixture, mixture of the hexamethyldisiloxane with acetylene as well as acetylene gas alone has been used as a source of the hydrocarbons. Optical properties of the synthesized films were investigated by spectroscopic ellipsometry. Structure of the DLC films has been studied by means of the Raman spectroscopy. Effects of the technological deposition parameters such as composition of the gas precursors, ion beam energy, ion beam current density were considered.

In situ analysis of adsorption process from residual gases during thin film deposition

In this work we present the developed experimental technique as well as results of optical control of adsorption processes during thin film deposition. Different metallic films: (silver) as a model material and barium getter films were studied. Thermal evaporation method has been used to deposit thin metallic films and films of barium getter on glass substrates. Kinetics of the optical absorbance of the growing film was registered in situ measuring transmission of the film-substrate structure. These measurements were done in parallel to the ex-situ absorption (UV-VIS) and reflection spectra as well as XRD analysis. Such complex measurements enabled us to follow adsorption process from the residual gases during thermal evaporation as well to control adsorption process after the evaporation.

Al-nGaAs ohmic contact formation by H2SeO3 treatment and annealing

In this research the influence of annealing on current- voltage characteristics of selenious acid (H2SeO3) treated Al-nGaAs contacts was investigated. Linear Al-nGaAs contacts were obtained by combination of selenious acid treatment and annealing. Dependence of the annealing and selenious acid treatment effects on nGaAs substrate dopants concentration was observed. Specific resistivity of the Al- nGaAs ohmic contact as low as 7.3(DOT)10-6 (Omega) (DOT)cm2 was achieved. Formation of the Al-nGaAs ohmic contact was explained by the interface Se reactions with both GaAs and Al.© (2001) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.