R. J. Cobley

A quantitative study of the formation of breath figure templated polymer materials

Self-assembled ordered arrays of pores are formed when a polymer-solvent solution is deposited in the presence of a humid airflow. These structures can be used as biological scaffolds, photonic bandgap materials and microfluidic beakers. Despite a wealth of material in the published literature regarding the growth of these structures, the dynamics of the process have received little attention from a quantitative perspective. Before the self-assembly mechanism can be understood, it is important to first look at the co-existent driving conditions. Here we develop such a computational model to describe this casting process, which finds excellent agreement with published data. The solvent evaporation profile is found to be near-linear for the majority of the casting process. During this stage a steady-state thermal system exists. The model shows that a humidity threshold exists for the creation of self-assembled structures, with threshold values which find excellent agreement with the literature. Measurement estimates taken of condensate deposition on to the polymer film match the order of magnitude and trend of computational values. Although not given attention in the literature before, slide thickness is shown to be a crucial parameter in this process. The model is able to identify the critical parameters in this system and show which should be controlled and specified to enable experimental results to be repeated. The ability of this model to accurately match experimental results sets it up as the basis for development of a full approach to capture the dynamics of the self-assembly formation process.

Controlling the Electrical Transport Properties of Nanocontacts to Nanowires

The ability to control the properties of electrical contacts to nanostructures is essential to realize operational nanodevices. Here, we show that the electrical behavior of the nanocontacts between free-standing ZnO nanowires and the catalytic Au particle used for their growth can switch from Schottky to Ohmic depending on the size of the Au particles in relation to the cross-sectional width of the ZnO nanowires. We observe a distinct Schottky to Ohmic transition in transport behavior at an Au to nanowire diameter ratio of 0.6. The current-voltage electrical measurements performed with a multiprobe instrument are explained using 3-D self-consistent electrostatic and transport simulations revealing that tunneling at the contact edge is the dominant carrier transport mechanism for these nanoscale contacts. The results are applicable to other nanowire materials such as Si, GaAs, and InAs when the effects of surface charge and contact size are considered.

Modeling multiple quantum barrier effects and reduced electron leakage in red-emitting laser diodes

Severe electron leakage impedes the full exploitation of AlGaInP laser diodes in the 630nm regime. Such thermally activated currents are attributed to inherently small conduction band offsets and intervalley transfer between the Γ and X conduction band minima. To negate the detrimental effect of these two intrinsic material issues a theoretical model is proposed. A multi-quantum-barrier (MQB) structure able to inhibit both Γ- and X-band transmissions is inserted in the p-doped region adjacent to the active region of the device, allowing a greater percentage of injected electrons to be reflected back within the active region. The design of the MQB follows a strict optimization procedure that takes into account fluctuations of superlattice layer width and composition. This model is used in conjunction with a dual conduction band drift-diffusion simulator to enable the design of the MQB at an operating voltage and hence account for nonlinear charge distribution across it. Initial results indicate strong agre...

Quantitative analysis of annealed scanning probe tips using energy dispersive x-ray spectroscopy

A quantitative method to measure the reduction in oxide species on the surface of electrochemically etched tungsten tips during direct current annealing is developed using energy dispersive x-ray spectroscopy. Oxide species are found to decrease with annealing current, with the trend repeatable over many tips and along the length of the tip apex. A linear resistivity approximation finds significant oxide sublimation occurs at 1714 K, but surface melting and tip broadening at 2215 K. This method can be applied to calibrate any similar annealing stage, and to identify the tradeoff regime between required morphological and chemical properties.

The effect of interface roughness on multilayer heterostructures

Semiconductor devices which utilize the quantum confinement of charge carriers inherently employ material layers thin enough that even monolayer interface roughness has an effect on performance. We present a method for including the effect of interface roughness on the calculation of electron energy levels and wavefunctions by solving Schrodinger’s equation across the interface between semiconductor layers. Interface roughness is approximated by considering a supplementary interface in addition to the idealized perfectly flat interface. The position of the second interface is considered to be a probabilistic distribution with a mean corresponding to the position of the perfect case. Using Green’s theorem and the appropriate reciprocity relations, we deduce a correction to the reflection and transmission probabilities of an electron incident upon a rough material interface. The procedure is presented in terms of a transfer matrix algorithm to facilitate use in existing electron reflection transmission prob...

Forming reproducible non-lithographic nanocontacts to assess the effect of contact compressive strain in nanomaterials

The application of electrical nanoprobes to measure and characterize nanomaterials has become widely spread. However, the formation of quality electrical contacts using metallic probes on nanostructures has not been directly assessed. We investigate here the electrical behaviour of non-lithographically formed contacts to ZnO nanowires (NWs) and develop a method to reproducibly form Ohmic contacts for accurate electrical measurement of the nanostructures. The contacting method used in this work relies on an electrical feedback mechanism to determine the point of contact to the individual NWs, ensuring minimal compressive strain at the contact. This developed method is compared with the standard tip deflection contacting technique and shows a significant improvement in reproducibility. The effect of excessive compressive strain at the contact was investigated, with a change from rectifying to ohmic I–V behaviour observed as compressive strain at the contact was increased, leading to irreversible changes to the electrical properties of the NW. This work provides an ideal method for forming reproducible non-lithographic nanocontacts to a multitude of nanomaterials.

The role of probe oxide in local surface conductivity measurements

Local probe methods can be used to measure nanoscale surface conductivity, but some techniques including nanoscale four point probe rely on at least two of the probes forming the same low resistivity non-rectifying contact to the sample. Here, the role of probe shank oxide has been examined by carrying out contact and non-contact I V measurements on GaAs when the probe oxide has been controllably reduced, both experimentally and in simulation. In contact, the barrier height is pinned but the barrier shape changes with probe shank oxide dimensions. In non-contact measurements, the oxide modifies the electrostatic interaction inducing a quantum dot that alters the tunneling behavior. For both, the contact resistance change is dependent on polarity, which violates the assumption required for four point probe to remove probe contact resistance from the measured conductivity. This has implications for all nanoscale surface probe measurements and macroscopic four point probe, both in air and vacuum, where the role of probe oxide contamination is not well understood.

Direct real-time observation of catastrophic optical degradation in operating semiconductor lasers using scanning tunneling microscopy

Cross-sectional scanning tunneling microscopy is performed on operating semiconductor quantum well laser devices to reveal real time changes in device structure. Low and nominally doped capping regions adjacent to the quantum well active region are found to heat under normal operating conditions. The increase in anion-vacancy defect formation and the generation of surface states pins the Fermi level at the surface and begins the process of catastrophic optical degradation which eventually destroys the device. The technique has implications for the study of defect generation and in-operation changes in all nanostructures.

The effects of surface stripping ZnO nanorods with argon bombardment

ZnO nanorods are used in devices including field effects transistors, piezoelectric transducers, optoelectronics and gas sensors. However, for efficient and reproducible device operation and contact behaviour, surface contaminants must be removed or controlled. Here we use low doses of argon bombardment to remove surface contamination and make reproducible lower resistance contacts. Higher doses strip the surface of the nanorods allowing intrinsic surface measurements through a cross section of the material. Photoluminescence finds that the defect distribution is higher at the near-surface, falling away in to the bulk. Contacts to the n-type defect-rich surface are near-Ohmic, whereas stripping away the surface layers allows more rectifying Schottky contacts to be formed. The ability to select the contact type to ZnO nanorods offers a new way to customize device behaviour.

Nondestructive Method for Mapping Metal Contact Diffusion in In2O3 Thin-Film Transistors

The channel width-to-length ratio is an important transistor parameter for integrated circuit design. Contact diffusion into the channel during fabrication or operation alters the channel width and this important parameter. A novel methodology combining atomic force microscopy and scanning Kelvin probe microscopy (SKPM) with self-consistent modeling is developed for the nondestructive detection of contact diffusion on active devices. Scans of the surface potential are modeled using physically based Technology Computer Aided Design (TCAD) simulations when the transistor terminals are grounded and under biased conditions. The simulations also incorporate the tip geometry to investigate its effect on the measurements due to electrostatic tip–sample interactions. The method is particularly useful for semiconductor– and metal–semiconductor interfaces where the potential contrast resulting from dopant diffusion is below that usually detectable with scanning probe microscopy.