R. Jomtarak
King Mongkut's Institute of Technology Ladkrabang
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Publication
Featured researches published by R. Jomtarak.
Journal of Lightwave Technology | 2010
Thanawat Phatharaworamet; C. Teeka; R. Jomtarak; S. Mitatha; Preecha P. Yupapin
In this paper, we have derived and presented the dynamic behavior of dark-bright soliton collision within the modified add/drop filter, which it is known as PANDA ring resonator. By using the dark-bright soliton conversion control, the obtained outputs of the dynamic states can be used to form the random binary codes, which can be available for communication security application. Results obtained have shown that the random binary codes can be formed by using the polarized light components, whereas the retrieved (decoded) codes can be obtained by using the dark-bright soliton conversion signals. The obtained switching time of 12.8 ns is noted.
international conference on enabling science and nanotechnology | 2011
C. Teeka; S. Songmuang; R. Jomtarak; Preecha P. Yupapin; Muhammad Arif Jalil; Iraj Sadegh Amiri; Jalil Ali
We present a new concept of ASK‐to‐PSK generation based on nonlinear microring resonators coupled to one MZI arm by using OptiWave FDTD method. By microring resonator increase from one to three microring (SR to TR), we found that the amplitude shift keying (ASK) are increase exactly and the phase shift keying (PSK) is equal to π.
Optical Engineering | 2010
M. Tasakorn; C. Teeka; R. Jomtarak; Preecha P. Yupapin
We propose a novel system of dynamic potential well generation and control using light pulse control within an add/drop optical filter. The multiplexing signals of the dark solition with bright/Gaussian pulses are controlled, tuned, and amplified within the system. The optical storage rings are embedded within the add/drop optical filter system, whereas the generated optical signals can be stored and amplified within the design system. In application, the storage signals can be configured to be an optical trapping tool, which is known as an optical tweezer, where the high field peak or well can be formed. The advantages are that the dynamic well can be stored and the array of wells can be generated for multiple wells applications. The different in time of the first two dynamic wells of 1 ns is noted.
International Journal of Nanomedicine | 2011
M. S. Aziz; Nathaporn Suwanpayak; Muhammad Arif Jalil; R. Jomtarak; Toto Saktioto; Jalil Ali; Preecha P. Yupapin
A new optical trapping design to transport gold nanoparticles using a PANDA ring resonator system is proposed. Intense optical fields in the form of dark solitons controlled by Gaussian pulses are used to trap and transport nanoscopic volumes of matter to the desired destination via an optical waveguide. Theoretically, the gradient and scattering forces are responsible for this trapping phenomenon, where in practice such systems can be fabricated and a thin-film device formed on the specific artificial medical materials, for instance, an artificial bone. The dynamic behavior of the tweezers can be tuned by controlling the optical pulse input power and parameters of the ring resonator system. Different trap sizes can be generated to trap different gold nanoparticles sizes, which is useful for gold nanoparticle therapy. In this paper, we have shown the utility of gold nanoparticle trapping and delivery for therapy, which may be useful for cosmetic therapy and related applications.
IEEE Transactions on Nanobioscience | 2012
Soontorn Chantanetra; C. Teeka; S. Mitatha; R. Jomtarak; Preecha P. Yupapin
In this paper, the novel type of transistor known as a hybrid transistor is proposed, in which all types of transistors can be formed by using a microring resonator called a PANDA microring resonator. In principle, such a transistor can be used to form for various transistor types by using the atom/molecule trapping tools, which is named by an optical tweezer, where in application all type of transistors, especially, molecule and photon transistors can be performed by using the trapping tools, which will be described in details.
Journal of Nonlinear Optical Physics & Materials | 2011
Fairuz Diyana Ismail; R. Jomtarak; C. Teeka; Jalil Ali; Preecha P. Yupapin
In this paper, an all-optical switch based on self-assembled GaAs/AlAs quantum dots (QDs) within a vertical cavity is designed and proposed. Two essential aspects of this novel device have been investigated, which include the QD/cavity nonlinearity with appropriately designed mirrors and the intersubband carrier dynamics inside QDs. The vertical-reflection-type switches have been investigated with an asymmetric cavity that consists of 12 periods of GaAs/Al0.8Ga0.2As and 25 periods for the front and back mirrors, respectively. The thicknesses of the GaAs and AlGaAs layers are chosen to be 89 and 102 nm, respectively. To give a dot-in-a-well (DWELL) structure, the 65 nm dimension of Si was recommended to deposit within a 20 nm AlAs QW. Results obtained have shown that all-optical switching via the QD excited states has been achieved with a time constant down to 275-fs and over 29.5 nm tunable wavelengths. These results demonstrated that QDs within a vertical cavity have great potential to realize low-power, consumption polarization-insensitive and micrometer-sized switching devices for future optical communication and signal processing systems.
IEEE Transactions on Nanotechnology | 2012
Farrah Dilla Zainol; R. Jomtarak; Suzairi Daud; C. Teeka; Jalil Ali; Preecha P. Yupapin
In this paper, we propose a new design of the atom bottom-up technique that uses an optical trapping tool to form the atom trapping layer within a thin-film grating. By using a PANDA ring resonator, where atoms can be trapped, pumped, and controlled by light, the trapped atoms/molecules can be selected, filtered, and embedded within the required thin-film grating layers to manufacture nanobattery. In application, P-type or N-type atom can be prepared, trapped, and embedded within the desired thin-film layers, and finally, the microbattery can be manipulated. The theoretical background of light pulse in a PANDA ring resonator is also reviewed.
Optical Engineering | 2011
A. Afroozeh; R. Jomtarak; Jalil Ali; Preecha P. Yupapin
In this study a new design of terahertz frequency carrier generation for radio frequency identification (RFID) application is proposed. The dense wavelength-division multiplexing can be generated and obtained by using a Gaussian or soliton pulse propagating within a modified add-drop filter known as a PANDA ring resonator. The broad bandwidth of terahertz signals can be obtained and are available for useful applications, in which the use of the generated terahertz pulses for RFID application, for instance Ad-Hoc network, uses RFID. Results obtained have shown that the increase in channel capacity can be obtained and useful for the large demand of RFID applications.
Journal of Nonlinear Optical Physics & Materials | 2015
R. Jomtarak; Preecha P. Yupapin; Jalil Ali
In this paper, a micro Doppler shift velocimeter using two nested-microring resonators incorporating two gratings is designed and simulated. Two wavelength light pulse can be generated by a single input wavelength source after travelling through the two defect grating. Whispering gallery mode of light pulses are localized within the nested-microring resonators, which can be used to form the two point probe Doppler shift velocimeter. The shifted frequency (velocity) can be obtained by the difference of optical path length between two point probes, where the relative velocity of Doppler frequency shift velocimeter can be obtained. The light absorption behaviors can also be investigated by the different light output spectrum. The obtained simulation results shows that the relative velocities of the reflection and transmission light intensities are ranged from 104 m/s to 105 m/s, which can be useful for Doppler frequency shift velocimeter and sensors, where the micro-optical device and multi-functions are the advantages.
international conference on enabling science and nanotechnology | 2010
R. Jomtarak; C. Teeka; Preecha P. Yupapin; Jalil Ali
Recently, the electron-hole pair generated in 1.06-µm separate-absorber-avalanche (multiplier) InP-based devices [1], SiGe/Si planar waveguides [2] fabricated with a Ge concentration ranging from 2% to 6% and different thicknesses ranging from 200 nm to 2 µm, generating electron-hole pairs with a 100 fs laser pulse emitted at 810 nm, and monitoring the free-carrier absorption transient with a c.w. probe beam at 1.55 µm, bipolar transistors [3], CMOS process [4], InAs-GaSb superlattice (SL) photodiodes [5], resonant microcavity [6], A cavity-QED using a single InAs quantum dot and a high-Q whispering gallery mode [7].