R. Navickas

Basic Self-Formation Processes in the Technologies of the Integrated Circuits

The analysis for basic processes of self-formation microstructure in technologies of manufacturing semiconductor devices and integrated circuits (IC) have been made and the requirements have been formulated. The results of the implementation of self-formation processes for creating new technologies of manufacturing semiconductor devices and IC have been presented.

Modelling Geometry of Technological Masks in Lateral Etching Processes

A model of the evolution geometry technological masks and underlaying layers in the lateral etching processes is created for analysis and design of new self-alignment and self-formation technologies semiconductor devices and integrated circuits. The results of the simulation for the different configurations masks and selectivities of the underlaying layers have been presented.

A Method for Continuous Tuning of MOSFET–RC Filters with Extended Control Range

Abstract In this paper a tuning structure for a MOSFET?RC filters is presented. The proposed tuning structure is composed of switched resistor banks with voltage controlled transistors. The voltage controlled transistors use active feedback with extended control range for continuous filter parameter tuning, without degrading the total linearity performance of the filter. The proposed tuning structure is tested by implementing it in a second order low pass biquadratic filter cell in 65 nm CMOS technology. The designed filter has a highly reconfigurable response, ranging from Chebyshev to Bessel, a tuneable -3 dB bandwidth from 10 MHz to 100 MHz and can be used for multiple standard wireless solutions. Filter IIP3 performance is not degraded when the bandwidth is continuously tuned by 40 % with a 1 V pp input. The maximum power dissipation, including active feedback circuits, is 17.2 mW from a 1.2 V source when the filter is tuned to 100 MHz bandwidth.

Modelling Evolution of Nanostructures in Lateral Etching Processes

The model of the evolution of nano- and microstructures in the self-formation process of underetching (lateral etching) layers was created for analysis and design of new self-alignment and self-formation technologies semiconductor devices and integrated circuits. The program was realized on the basis of a personal computer with the processor INTEL PENTIUM 4 and MATLAB 5.3 software. The results of the simulation were given for the different initial configurations of nanostructures. The experimental investigations evolution of microstructures in lateral etching processes of amorphous and polycrystalline films were performed and the results presented.

Design of Gigahertz Tuning Range 5 GHz LC Digitally Controlled Oscillator in 0.18 μm CMOS

Abstract In this paper design and simulation of a 4.3 - 5.4 GHz LC digitally controlled oscillator (LC DCO) in IBM 7RF 0.18 μm CMOS technology are presented. Wide gigahertz tuning range is achieved by using two LC DCOs, sharing same structure. DCO is made of one NMOS negative impedance transistor pair and LC tank, which consists of high quality inductor and two switched capacitor arrays for coarse and fine frequency tuning. Coarse and fine tuning switched capacitor arrays are controlled using 6-bit and 3-bit binary words. To increase available frequency values, frequency divider is used. Structure of frequency divider is based on extended-true-single-phase-clock flip-flops. Divider is made of eight divide-by-2 cells connected in daisy chain, thus division values from 2 to 256 are available. Wide tuning range and high division values allows using such DCO with frequency divider in multi-standart transceivers. Whole device is supplied from a single 1.8 V voltage source. At highest frequency proposed device draws 90 mA current including all buffers. Phase noise is −116.4 dBc/Hz at 1 MHz offset from 5.44 GHz carrier. Designed dual DCO and frequency divider occupies about 0.4mm×0.5mm of chip space and whole chip, including pads, occupies 1.5mm × 1.5mm area of silicon.

Technological Trends of Nanoelectromechanical Systems

The analysis of technological trends nanoelectromechanical systems and processes of self-formation micro- and nanostructures in manufacturing MEMS/NEMS have been made and the requirements have been formulated. The results of modeling geometry nanostructures and the implementation of self-formation processes for creating new technologies of manufacturing MEMS/NEMS have also been presented.

Electromagnetic analysis of the main and higher modes on the onion-like carbon tubes

ABSTRACT The electric and magnetic field distributions as well as the dispersion characteristics of open cylindrical tube (hollow-core) waveguides are analysed in this work. The analysed waveguides are made of an onion-like carbon (OLC) material. The solution of the boundary problem was fulfilled by the partial area method. It was discovered the very complicated dependencies of the phase and attenuation constants on the waveguide radii. Such dependencies arise because the OLC material is the highly dispersive and absorbing one. The fundamental and four higher modes can propagate in our investigated waveguides. We have analysed the high-frequency cut-off frequency of modes that is dependent on the tube waveguide external radius. The certain electromagnetic (EM) mode can propagate only on the frequencies lower than the mentioned cut-off frequency. For this reason, this cut-off frequency has an important use in practical applications. We presented here the EM field distributions of modes. We discovered that it is possible to reach the one-mode regime of OLC tube waveguide at the certain external radius. The fundamental and first higher modes’ EM energy is concentrated in the OLC material between the internal and external surfaces of the waveguide.

Active low-pass filter design with variable filter order for wideband transceivers

Modern wideband transceivers that supports several different wireless communication standards require flexible intermediate frequency (IF) chains. Active low-pass filters are essential blocks in all transceiver architectures and their IF chain designs. In this paper, an active low-pass filter with a variable filter order and cut-off frequency is proposed. The filter order control gives a possibility to optimize the IF chain for different modes of transceiver operation like reduced power consumption or/and noise. The proposed filter can achieve a 6th, 4th or 2nd order low-pass filter response with a tunable cut-off frequency from 20MHz to 120MHz. The proposed design was verified with Cadence using a 65nm CMOS technology.

Self-formation processes in high-speed integrated circuits

This paper presents the analysis of self-formation processes of micro and nanostructures in technologies of manufacturing high-speed semiconductor devices and integrated circuits (ICs) according possibilities to receive the minimal width of the base area and the methods used for the formation of contacts and electrodes. The results of the implementation of self-formation processes for creating new technologies of manufacturing semiconductor devices and ICs have been presented.

Micro- and nano-electronics education in Vilnius Gediminas Technical University

This paper presents a detailed overview of the Micro- and Nano-electronics curriculum for Bachelors and Masters degree studies programs in Vilnius Gediminas Technical University (VGTU). These programs focus on giving the ability and knowledge to students in designing an Integrated Circuits (ICs) using advanced EDA Tools. The Micro- and Nanoelectronics education programs cover all aspects of the IC design process: from the understanding of IC manufacturing processes and technologies to IC verification, physical design implementation and testing. Through cooperation with research institutes, industries, and governments both at home and abroad, these programs only become even stronger. These Micro- and Nano-electronics programs are designed to educate a large number of talented IC designers, to increase the number of startup companies in IC design and finally to establish a microelectronics industry ecosystem in Lithuania and in the European Union (EU).