R Reinoud Lavrijsen

Domain wall depinning governed by the spin Hall effect

Perpendicularly magnetized materials have attracted significant interest owing to their high anisotropy, which gives rise to extremely narrow, nanosized domain walls. As a result, the recently studied current-induced domain wall motion (CIDWM) in these materials promises to enable a new class of data, memory and logic devices. Here we propose the spin Hall effect as an alternative mechanism for CIDWM. We are able to carefully tune the net spin Hall current in depinning experiments on Pt/Co/Pt nanowires, offering unique control over CIDWM. Furthermore, we determine that the depinning efficiency is intimately related to the internal structure of the domain wall, which we control by the application of small fields along the nanowire. This manifestation of CIDWM offers an attractive degree of freedom for manipulating domain wall motion by charge currents, and sheds light on the existence of contradicting reports on CIDWM in perpendicularly magnetized materials.

Magnetic ratchet for three-dimensional spintronic memory and logic

One of the key challenges for future electronic memory and logic devices is finding viable ways of moving from today’s two-dimensional structures, which hold data in an x–y mesh of cells, to three-dimensional structures in which data are stored in an x–y–z lattice of cells. This could allow a many-fold increase in performance. A suggested solution is the shift register—a digital building block that passes data from cell to cell along a chain. In conventional digital microelectronics, two-dimensional shift registers are routinely constructed from a number of connected transistors. However, for three-dimensional devices the added process complexity and space needed for such transistors would largely cancel out the benefits of moving into the third dimension. ‘Physical’ shift registers, in which an intrinsic physical phenomenon is used to move data near-atomic distances, without requiring conventional transistors, are therefore much preferred. Here we demonstrate a way of implementing a spintronic unidirectional vertical shift register between perpendicularly magnetized ferromagnets of subnanometre thickness, similar to the layers used in non-volatile magnetic random-access memory. By carefully controlling the thickness of each magnetic layer and the exchange coupling between the layers, we form a ratchet that allows information in the form of a sharp magnetic kink soliton to be unidirectionally pumped (or ‘shifted’) from one magnetic layer to another. This simple and efficient shift-register concept suggests a route to the creation of three-dimensional microchips for memory and logic applications.

Thickness dependence of the interfacial Dzyaloshinskii–Moriya interaction in inversion symmetry broken systems

In magnetic multilayer systems, a large spin-orbit coupling at the interface between heavy metals and ferromagnets can lead to intriguing phenomena such as the perpendicular magnetic anisotropy, the spin Hall effect, the Rashba effect, and especially the interfacial Dzyaloshinskii–Moriya (IDM) interaction. This interfacial nature of the IDM interaction has been recently revisited because of its scientific and technological potential. Here we demonstrate an experimental technique to straightforwardly observe the IDM interaction, namely Brillouin light scattering. The non-reciprocal spin wave dispersions, systematically measured by Brillouin light scattering, allow not only the determination of the IDM energy densities beyond the regime of perpendicular magnetization but also the revelation of the inverse proportionality with the thickness of the magnetic layer, which is a clear signature of the interfacial nature. Altogether, our experimental and theoretical approaches involving double time Greens function methods open up possibilities for exploring magnetic hybrid structures for engineering the IDM interaction.

Magnetization dynamics and Gilbert damping in ultrathin Co48Fe32B20 films with out-of-plane anisotropy

Time resolved magneto-optical Kerr measurements are carried out to study the precessional dynamics of ferromagnetic thin films with out-of-plane anisotropy. A combined analysis of parameters, such as coercive fields, magnetic anisotropy, and Gilbert damping α, is reported. Using a macrospin approximation and the Landau–Lifshitz–Gilbert equation, the effective anisotropy and α are obtained. A large damping varying with the applied field as well as with the thickness of the ferromagnetic layer is reported. Simulations using a distribution in the effective anisotropy allow us to reproduce the field evolution of α. Moreover, its thickness dependence correlates with the spin pumping effect.

Domain-Wall Pinning by Local Control of Anisotropy in Pt/Co/Pt strips

We theoretically and experimentally analyze the pinning of a magnetic domain wall (DW) at engineered anisotropy variations in Pt/Co/Pt strips with perpendicular magnetic anisotropy. An analytical model is derived showing that a step in the anisotropy acts as an energy barrier for the DW. Quantitative measurements are performed showing that the anisotropy can be controlled by focused ion beam irradiation with Ga ions. This tool is used to experimentally study the field-induced switching of nanostrips which are locally irradiated. The boundary of the irradiated area indeed acts as a pinning barrier for the domain wall and the pinning strength increases with the anisotropy difference. Varying the thickness of the Co layer provides an additional way to tune the anisotropy, and it is shown that a thinner Co layer gives a higher starting anisotropy thereby allowing tunable DW pinning in a wider range of fields. Finally, we demonstrate that not only the anisotropy itself, but also the width of the anisotropy barrier can be tuned on the length scale of the domain wall.

Tuning the interlayer exchange coupling between single perpendicularly magnetized CoFeB layers

We experimentally study the tunability of the Ruderman-Kittel-Kasuya-Yosida (RKKY) interlayer exchange coupling (IEC) in Pt/CoFeB/Pt/Ru/Pt/CoFeB/Pt stacks with perpendicular magnetic anisotropy (PMA). The perpendicular magnetization of a single Pt/Co60Fe20B20/Pt (at. %) shows full remanence and square hysteresis loops for a CoFeB thickness range of 0.60–1.0 nm. By inserting a Pt layer between the Ru and CoFeB, the PMA of the ultrathin CoFeB layers is stabilized and the IEC can be tuned. In particular, we show that the IEC versus Pt thickness exhibits a simple exponential decay with a decay length of 0.16 nm.

Precise control of domain wall injection and pinning using helium and gallium focused ion beams

In experiments on current-driven domain wall (DW) motion in nanostrips with perpendicular magnetic anisotropy (PMA), the initial DW preparation is usually not well controlled. We demonstrate precise control of DW injection using Ga and novel He focused ion beam (FIB) irradiation to locally reduce the anisotropy in part of a Pt/Co/Pt strip. DWs experience pinning at the boundary of the irradiated area. This DW pinning is more pronounced at the He irradiation boundary compared to Ga. This is attributed to a better He beam resolution, causing an anisotropy gradient over a much smaller length scale and hence, a steeper energy barrier for the DW. The results indicate that He FIB is a useful tool for anisotropy engineering of magnetic devices in the nanometer range.

Fe:O:C grown by focused-electron-beam-induced deposition: magnetic and electric properties

We systematically study the effect of oxygen content on the magneto-transport and microstructure of Fe:O:C nanowires deposited by focused-electron-beam-induced (FEBID) deposition. The Fe/O ratio can be varied with an Fe content varying between ∼ 50 and 80 at.% with overall low C content (≈16 ± 3 at.%) by adding H(2)O during the deposition while keeping the beam parameters constant as measured by energy dispersive x-ray (EDX) spectroscopy. The room-temperature magnetic properties for deposits with an Fe content of 66-71 at.% are investigated using the magneto-optical Kerr effect (MOKE) and electric magneto-transport measurements. The nanostructure of the deposits is investigated through cross-sectional high-resolution transmission electron microscopy (HRTEM) imaging, allowing us to link the observed magneto-resistance and resistivity to the transport mechanism in the deposits. These results demonstrate that functional magnetic nanostructures can be created, paving the way for new magnetic or even spintronics devices.

Asymmetric magnetic bubble expansion under in-plane field in Pt/Co/Pt: Effect of interface engineering

We analyze the impact of growth conditions on the asymmetric magnetic bubble expansion under an in-plane field in ultrathin Pt/Co/Pt films. Specifically, using sputter deposition, we vary the Ar pressure during the growth of the top Pt layer. This induces a large change in the interfacial structure as evidenced by a factor three change in the effective perpendicular magnetic anisotropy. Strikingly, a discrepancy between the current theory for domain-wall propagation based on a simple domain-wall energy density and our experimental results is found. This calls for further theoretical development of domain-wall creep under in-plane fields and varying structural asymmetry.

Asymmetric Pt/Co/Pt-stack induced sign-control of current-induced magnetic domain-wall creep

We report experimentally obtained magnetic domain wall (DW) velocities of current-assisted field-driven DW creep in perpendicularly magnetized Pt/Co/Pt. We have intentionally introduced an asymmetry in the stacks by using different thicknesses of the two Pt layers sandwiching the Co layer. Thereby, it is tested whether conflicting current-induced domain wall motion (CI-DWM) results may be intrinsically related to the basic layout and growth. We sketch a scenario which could be at the basis of contradicting reports in literature where the direction of CI-DWM conflicts with spin-torque-transfer theory, allowing the sign of the current-induced effect on DW motion to be tuned.