R. Sreeja Sreedharan

Effect of thermal annealing on the phase evolution of silver tungstate in Ag/WO3 films

Silver/tungsten oxide multi-layer films are deposited over quartz substrates by RF magnetron sputtering technique and the films are annealed at temperatures 200, 400 and 600°C. The effect of thermal annealing on the phase evolution of silver tungstate phase in Ag/WO3 films is studied extensively using techniques like X-ray diffraction, micro-Raman analysis, atomic force microscopy and photoluminescence studies. The XRD pattern of the as-deposited film shows only the peaks of cubic phase of silver. The film annealed at 200°C shows the presence of XRD peaks corresponding to orthorhombic phase of Ag2WO4 and peaks corresponding to cubic phase of silver with reduced intensity. It is found that, as annealing temperature increases, the volume fraction of Ag decreases and that of Ag2WO4 phase increases and becomes highest at a temperature of 400°C. When the temperature increases beyond 400°C, the volume fraction of Ag2WO4 decreases, due to its decomposition into silver and oxygen deficient phase Ag2W4O13. The micro-Raman spectra of the annealed films show the characteristic bands of tungstate phase which is in agreement with XRD analysis. The surface morphology of the films studied by atomic force microscopy reveals that the particle size and r.m.s roughness are highest for the sample annealed at 400°C. In the photoluminescence study, the films with silver tungstate phase show an emission peak in blue region centered around the wavelength 441 nm (excitation wavelength 256 nm).

Highly transparent and luminescent nanostructured EU2O3 doped ZnO films

Zinc oxide is a wide, direct band gap II-VI oxide semiconductor. Pure and Eu-doped ZnO films are prepared by RF Magnetron sputtering at different doping concentrations (0.5, 1, 3 and 5 wt %). The films are annealed at 500 0C in air for two hours. The structural, morphological and optical properties of the films are characterized using XRD, micro-Raman, AFM, UV-Visible and photoluminescence spectroscopy. The thickness of the films is measured using stylus profilometer. XRD analysis shows that all the films are highly c-axis oriented exhibiting a single peak corresponding to (002) lattice reflection plane of hexagonal wurtzite crystal phase of ZnO. The micro-Raman spectra analysis reveals the presence of E2 high mode in all the samples which is the intrinsic characteristic of hexagonal wurtzite structure of ZnO. The appearance of LO modes indicates the formation of defects such as oxygen vacancies in the films. AFM micrographs show uniform distribution of densely packed grains of size with well defined grain boundaries. All the films exhibit very high transmittance (above 80%) in the visible region with a sharp fundamental absorption edge around 380 nm corresponding to the intrinsic band edge of ZnO. All the films show PL emission in the UV and visible region.