Rafael Roldán

Local strain engineering in atomically thin MoS2.

Controlling the bandstructure through local-strain engineering is an exciting avenue for tailoring optoelectronic properties of materials at the nanoscale. Atomically thin materials are particularly well-suited for this purpose because they can withstand extreme nonhomogeneous deformations before rupture. Here, we study the effect of large localized strain in the electronic bandstructure of atomically thin MoS2. Using photoluminescence imaging, we observe a strain-induced reduction of the direct bandgap and funneling of photogenerated excitons toward regions of higher strain. To understand these results, we develop a nonuniform tight-binding model to calculate the electronic properties of MoS2 nanolayers with complex and realistic local strain geometries, finding good agreement with our experimental results.

Plasmons and Screening in Monolayer and Multilayer Black Phosphorus

Black phosphorus exhibits a high degree of band anisotropy. However, we find that its in-plane static screening remains relatively isotropic for momenta relevant to elastic long-range scattering processes. On the other hand, the collective electronic excitations in the system exhibit a strong anisotropy. Band nonparabolicity, due to interband couplings, leads to a plasmon frequency which scales as nβ, where n is the carrier concentration, and β<1/2. Screening and charge distribution in the out-of-plane direction are also studied using a nonlinear Thomas-Fermi model.

Tight-binding model and direct-gap/indirect-gap transition in single-layer and multilayer MoS2

In this paper we present a paradigmatic tight-binding model for single-layer as well as multilayered semiconducting MoS2 and similar transition metal dichalcogenides. We show that the electronic properties of multilayer systems can be reproduced in terms of a tight-binding modeling of the single-layer hopping terms by simply adding the proper interlayer hoppings ruled by the chalcogenide atoms. We show that such a tight-binding model makes it possible to understand and control in a natural way the transition between a direct-gap band structure, in single-layer systems, and an indirect gap in multilayer compounds in terms of a momentum/orbital selective interlayer splitting of the relevant valence and conduction bands. The model represents also a suitable playground to investigate in an analytical way strain and finite-size effects.

Strain engineering in semiconducting two-dimensional crystals.

One of the fascinating properties of the new families of two-dimensional crystals is their high stretchability and the possibility to use external strain to manipulate, in a controlled manner, their optical and electronic properties. Strain engineering, understood as the field that study how the physical properties of materials can be tuned by controlling the elastic strain fields applied to it, has a perfect platform for its implementation in the atomically thin semiconducting materials. The object of this review is to give an overview of the recent progress to control the optical and electronics properties of 2D crystals, by means of strain engineering. We will concentrate on semiconducting layered materials, with especial emphasis in transition metal dichalcogenides (MoS2, WS2, MoSe2 and WSe2). The effect of strain in other atomically thin materials like black phosphorus, silicene, etc, is also considered. The benefits of strain engineering in 2D crystals for applications in nanoelectronics and optoelectronics will be revised, and the open problems in the field will be discussed.

Electric‐Field Screening in Atomically Thin Layers of MoS2: the Role of Interlayer Coupling

This work was supported by MICINN/MINECO (Spain) through the programs MAT2011-25046 and CONSOLIDER-INGENIO-2010 “Nanociencia Molecular” CSD-2007-00010, Comunidad de Madrid through program Nanobiomagnet S2009/MAT-1726 and the European Union (FP7) through the programs RODIN and ELFOS. E.C. acknowledges a Marie Curie Grant, PIEF-GA-2009-251904.

Dielectric screening in atomically thin boron nitride nanosheets

Two-dimensional (2D) hexagonal boron nitride (BN) nanosheets are excellent dielectric substrate for graphene, molybdenum disulfide, and many other 2D nanomaterial-based electronic and photonic devices. To optimize the performance of these 2D devices, it is essential to understand the dielectric screening properties of BN nanosheets as a function of the thickness. Here, electric force microscopy along with theoretical calculations based on both state-of-the-art first-principles calculations with van der Waals interactions under consideration, and nonlinear Thomas-Fermi theory models are used to investigate the dielectric screening in high-quality BN nanosheets of different thicknesses. It is found that atomically thin BN nanosheets are less effective in electric field screening, but the screening capability of BN shows a relatively weak dependence on the layer thickness.

Landau Level Spectrum of ABA- and ABC-stacked Trilayer Graphene

We study the Landau level spectrum of ABA- and ABC-stacked trilayer graphene. We derive analytic low energy expressions for the spectrum, the validity of which is confirmed by comparison to a �-band tight-binding calculation of the density of states on the honeycomb lattice. We further study the effect of a perpendicular electric field on the spectrum, where a zero-energy plateau appears for ABC stacking order, due to the opening of a gap at the Dirac point, while the ABAstacked trilayer graphene remains metallic. We discuss our results in the context of recent electronic transport experiments. Furthermore, we argue that the expressions obtained can be useful in the analysis of future measurements of cyclotron resonance of electrons and holes in trilayer graphene.

Collective modes of doped graphene and a standard two-dimensional electron gas in a strong magnetic field: Linear magnetoplasmons versus magnetoexcitons

A doped graphene layer in the integer quantum Hall regime reveals a highly unusual particle-hole excitation spectrum, which is calculated from the dynamical polarizability in the random phase approximation. We find that the elementary neutral excitations in graphene in a magnetic field are unlike those of a standard two-dimensional electron gas (2DEG): in addition to the upper-hybrid mode, the particle-hole spectrum is reorganized in linear magneto-plasmons that disperse roughly parallel to

Strong Modulation of Optical Properties in Black Phosphorus through Strain-Engineered Rippling

\omega=v_F q

Electronic properties of single-layer and multilayer transition metal dichalcogenides MX2 (M = Mo, W and X = S, Se)

, instead of the usual horizontal (almost dispersionless) magneto-excitons. These modes could be detected in an inelastic light scattering experiment.