Ragip Pala

Nanoscale Conducting Oxide PlasMOStor

We experimentally demonstrate an ultracompact PlasMOStor, a plasmon slot waveguide field-effect modulator based on a transparent conducting oxide active region. By electrically modulating the conducting oxide material deposited into the gaps of highly confined plasmonic slot waveguides, we demonstrate field-effect dynamics giving rise to modulation with high dynamic range (2.71 dB/μm) and low waveguide loss (∼0.45 dB/μm). The large modulation strength is due to the large change in complex dielectric function when the signal wavelength approaches the surface plasmon resonance in the voltage-tuned conducting oxide accumulation layer. The results provide insight about the design of ultracompact, nanoscale modulators for future integrated nanophotonic circuits.

Optimization of non-periodic plasmonic light-trapping layers for thin-film solar cells

Non-periodic arrangements of nanoscale light scatterers allow for the realization of extremely effective broadband light-trapping layers for solar cells. However, their optimization is challenging given the massive number of degrees of freedom. Brute-force, full-field electromagnetic simulations are computationally too time intensive to identify high-performance solutions in a vast design space. Here we illustrate how a semi-analytical model can be used to quickly identify promising non-periodic spatial arrangements of nanoscale scatterers. This model only requires basic knowledge of the scattering behaviour of a chosen nanostructure and the waveguiding properties of the semiconductor layer in a cell. Due to its simplicity, it provides new intuition into the ideal amount of disorder in high-performance light-trapping layers. Using simulations and experiments, we demonstrate that arrays of nanometallic stripes featuring a limited amount of disorder, for example, following a quasi-periodic or Fibonacci sequence, can substantially enhance solar absorption over perfectly periodic and random arrays.

Gate-Tunable Conducting Oxide Metasurfaces

Metasurfaces composed of planar arrays of subwavelength artificial structures show promise for extraordinary light manipulation. They have yielded novel ultrathin optical components such as flat lenses, wave plates, holographic surfaces, and orbital angular momentum manipulation and detection over a broad range of the electromagnetic spectrum. However, the optical properties of metasurfaces developed to date do not allow for versatile tunability of reflected or transmitted wave amplitude and phase after their fabrication, thus limiting their use in a wide range of applications. Here, we experimentally demonstrate a gate-tunable metasurface that enables dynamic electrical control of the phase and amplitude of the plane wave reflected from the metasurface. Tunability arises from field-effect modulation of the complex refractive index of conducting oxide layers incorporated into metasurface antenna elements which are configured in reflectarray geometry. We measure a phase shift of 180° and ∼30% change in the reflectance by applying 2.5 V gate bias. Additionally, we demonstrate modulation at frequencies exceeding 10 MHz and electrical switching of ±1 order diffracted beams by electrical control over subgroups of metasurface elements, a basic requirement for electrically tunable beam-steering phased array metasurfaces. In principle, electrically gated phase and amplitude control allows for electrical addressability of individual metasurface elements and opens the path to applications in ultrathin optical components for imaging and sensing technologies, such as reconfigurable beam steering devices, dynamic holograms, tunable ultrathin lenses, nanoprojectors, and nanoscale spatial light modulators.

A submicron plasmonic dichroic splitter

Spectral imaging and sensing techniques, new solar cell designs and wavelength-division multiplexing in optical communication rely on structures that collect and sort photons by wavelength. The strong push for chip-scale integration of such optical components has necessitated ultracompact, planar structures, and fomented great interest in identifying the smallest possible devices. Consequently, novel micro-ring, photonic crystal and plasmonic solutions have emerged. Meanwhile, the optical coupling of subwavelength plasmonic structures supporting a very limited number of modes has also enabled new functionalities, including Fano resonances and structural electromagnetically-induced transparency. Here we show how two similarly sized subwavelength metal grooves can form an ultracompact submicron plasmonic dichroic splitter. Each groove supports just two electromagnetic modes of opposite symmetry that allows independent control of how a groove collects free-space photons and directs surface plasmon polaritons. These results show how the symmetry of electromagnetic modes can be exploited to build compact optical components.

Measurement of minority-carrier diffusion lengths using wedge-shaped semiconductor photoelectrodes†

Measurement of the photocurrent as a function of the thickness of a light absorber has been shown herein both theoretically and experimentally to provide a method for determination of the minority-carrier diffusion length of a sample. To perform the measurement, an illuminated spot of photons with an energy well above the band gap of the material was scanned along the thickness gradient of a wedge-shaped, rear-illuminated semiconducting light absorber. Photogenerated majority carriers were collected through a back-side transparent ohmic contact, and a front-side liquid or Schottky junction collected the photogenerated minority carriers. Calculations showed that the diffusion length could be evaluated from the exponential variation in photocurrent as a function of the thickness of the sample. Good agreement was observed between experiment and theory for a solid-state silicon Schottky junction measured using this method. As an example for the application of the technique to semiconductor/liquid-junction photoelectrodes, the minority-carrier diffusion length was determined for graded thickness, sputtered tungsten trioxide and polished bismuth vanadate films under back-illumination in contact with an aqueous electrolyte. This wedge technique does not require knowledge of the spectral absorption coefficient, doping, or surface recombination velocity of the sample.

Resonant thermoelectric nanophotonics

Photodetectors are typically based either on photocurrent generation from electron-hole pairs in semiconductor structures or on bolometry for wavelengths that are below bandgap absorption. In both cases, resonant plasmonic and nanophotonic structures have been successfully used to enhance performance. Here, we show subwavelength thermoelectric nanostructures designed for resonant spectrally selective absorption, which creates large localized temperature gradients even with unfocused, spatially uniform illumination to generate a thermoelectric voltage. We show that such structures are tunable and are capable of wavelength-specific detection, with an input power responsivity of up to 38 V W-1, referenced to incident illumination, and bandwidth of nearly 3 kHz. This is obtained by combining resonant absorption and thermoelectric junctions within a single suspended membrane nanostructure, yielding a bandgap-independent photodetection mechanism. We report results for both bismuth telluride/antimony telluride and chromel/alumel structures as examples of a potentially broader class of resonant nanophotonic thermoelectric materials for optoelectronic applications such as non-bandgap-limited hyperspectral and broadband photodetectors.

A scanning probe investigation of the role of surface motifs in the behavior of p-WSe2 photocathodes

The spatial variation in the photoelectrochemical performance for the reduction of an aqueous one-electron redox couple, Ru(NH_3)_6^(3+/2+), and for the evolution of H_2(g) from 0.5 M H_2SO_4(aq) at the surface of bare or Pt-decorated p-type WSe_2 photocathodes has been investigated in situ using scanning photocurrent microscopy (SPCM). The measurements revealed significant differences in the charge-collection performance (quantified by the values of external quantum yields, Φ_(ext)) on various macroscopic terraces. Local spectral response measurements indicated a variation in the local electronic structure among the terraces, which was consistent with a non-uniform spatial distribution of sub-band-gap states within the crystals. The photoconversion efficiencies of Pt-decorated p-WSe_2 photocathodes were greater for the evolution of H_2(g) from 0.5 M H_2SO_4 than for the reduction of Ru(NH_3)_6^(3+/2+), and terraces that exhibited relatively low values of Φ_(ext) for the reduction of Ru(NH_3)_6^(3+/2+) could in some cases yield values of Φ_(ext) for the evolution of H_2(g) comparable to the values of Φ_(ext) yielded by the highest-performing terraces. Although the spatial resolution of the techniques used in this work frequently did not result in observation of the effect of edge sites on photocurrent efficiency, some edge effects were observed in the measurements; however the observed edge effects differed among edges, and did not appear to determine the performance of the electrodes.

Omnidirectional and broadband absorption enhancement from trapezoidal Mie resonators in semiconductor metasurfaces

Light trapping in planar ultrathin-film solar cells is limited due to a small number of optical modes available in the thin-film slab. A nanostructured thin-film design could surpass this limit by providing broadband increase in the local density of states in a subwavelength volume and maintaining efficient coupling of light. Here we report a broadband metasurface design, enabling efficient and broadband absorption enhancement by direct coupling of incoming light to resonant modes of subwavelengthscale Mie nanoresonators defined in the thin-film active layer. Absorption was investigated both theoretically and experimentally in prototypes consisting of lithographically patterned, two-dimensional periodic arrays of silicon nanoresonators on silica substrates. A crossed trapezoid resonator shape of rectangular cross section is used to excite broadband Mie resonances across visible and near-IR spectra. Our numerical simulations, optical absorption measurements and photocurrent spectral response measurements demonstrate that crossed trapezoidal Mie resonant structures enable angle-insensitive, broadband absorption. A short circuit current density of 12.0 mA/cm2 is achieved in 210 nm thick patterned Si films, yielding a 4-fold increase compared to planar films of the same thickness. It is suggested that silicon metasurfaces with Mie resonator arrays can provide useful insights to guide future ultrathin-film solar cell designs incorporating nanostructured thin active layers.

Dual-Gated Active Metasurface at 1550 nm with Wide (>300°) Phase Tunability

Active metasurfaces composed of electrically reconfigurable nanoscale subwavelength antenna arrays can enable real-time control of scattered light amplitude and phase. Achievement of widely tunable phase and amplitude in chip-based active metasurfaces operating at or near 1550 nm wavelength has considerable potential for active beam steering, dynamic hologram rendition, and realization of flat optics with reconfigurable focal lengths. Previously, electrically tunable conducting oxide-based reflectarray metasurfaces have demonstrated dynamic phase control of reflected light with a maximum phase shift of 184° ( Nano Lett. 2016 , 16 , 5319 ). Here, we introduce a dual-gated reflectarray metasurface architecture that enables much wider (>300°) phase tunability. We explore light-matter interactions with dual-gated metasurface elements that incorporate two independent voltage-controlled MOS field effect channels connected in series to form a single metasurface element that enables wider phase tunability. Using indium tin oxide (ITO) as the active metasurface material and a composite hafnia/alumina gate dielectric, we demonstrate a prototype dual-gated metasurface with a continuous phase shift from 0 to 303° and a relative reflectance modulation of 89% under applied voltage bias of 6.5 V.

Dynamically controlled Purcell enhancement of visible spontaneous emission in a gated plasmonic heterostructure

Emission control of colloidal quantum dots (QDs) is a cornerstone of modern high-quality lighting and display technologies. Dynamic emission control of colloidal QDs in an optoelectronic device is usually achieved by changing the optical pump intensity or injection current density. Here we propose and demonstrate a distinctly different mechanism for the temporal modulation of QD emission intensity at constant optical pumping rate. Our mechanism is based on the electrically controlled modulation of the local density of optical states (LDOS) at the position of the QDs, resulting in the modulation of the QD spontaneous emission rate, far-field emission intensity, and quantum yield. We manipulate the LDOS via field effect-induced optical permittivity modulation of an ultrathin titanium nitride (TiN) film, which is incorporated in a gated TiN/SiO2/Ag plasmonic heterostructure. The demonstrated electrical control of the colloidal QD emission provides a new approach for modulating intensity of light in displays and other optoelectronics.The dynamic control of light emission from quantum dots is generally controlled via optical or electrical pumping. Here, Lu et al. electrically control the local density of states around a quantum dot to modulate its visible light emission properties.