Rai Moriya

Current-Controlled Magnetic Domain-Wall Nanowire Shift Register

The controlled motion of a series of domain walls along magnetic nanowires using spin-polarized current pulses is the essential ingredient of the proposed magnetic racetrack memory, a new class of potential non-volatile storage-class memories. Using permalloy nanowires, we achieved the successive creation, motion, and detection of domain walls by using sequences of properly timed, nanosecond-long, spin-polarized current pulses. The cycle time for the writing and shifting of the domain walls was a few tens of nanoseconds. Our results illustrate the basic concept of a magnetic shift register that relies on the phenomenon of spin-momentum transfer to move series of closely spaced domain walls.

Oscillatory dependence of current-driven magnetic domain wall motion on current pulse length

Magnetic domain walls, in which the magnetization direction varies continuously from one direction to another, have long been objects of considerable interest. New concepts for devices based on such domain walls are made possible by the direct manipulation of the walls using spin-polarized electrical current through the phenomenon of spin momentum transfer. Most experiments to date have considered the current-driven motion of domain walls under quasi-static conditions, whereas for technological applications, the walls must be moved on much shorter timescales. Here we show that the motion of domain walls under nanosecond-long current pulses is surprisingly sensitive to the pulse length. In particular, we find that the probability of dislodging a domain wall, confined to a pinning site in a permalloy nanowire, oscillates with the length of the current pulse, with a period of just a few nanoseconds. Using an analytical model and micromagnetic simulations, we show that this behaviour is connected to a current-induced oscillatory motion of the domain wall. The period is determined by the walls mass and the slope of the confining potential. When the current is turned off during phases of the domain wall motion when it has enough momentum, the domain wall is driven out of the confining potential in the opposite direction to the flow of spin angular momentum. This dynamic amplification effect could be exploited in magnetic nanodevices based on domain wall motion.

Dynamics of Magnetic Domain Walls Under Their Own Inertia

Moving Walls The current-induced movement of magnetic domain walls in magnetic nanowires is a candidate for a new architecture in logic processing and memory. Controlling the motion and position of the domain walls as they move along the wires in excess of 100 meters per second requires an understanding of the processes involved. Thomas et al. (p. 1810) investigated the dynamics of magnetic domain wall motion, looking at the acceleration, constant motion, and deceleration processes in detail. The whole process could be described in terms of the inertia of the domain wall. The distance traveled was simply proportional to the length of the current pulse used to move the wall, which should simplify implementation in a circuit or network architecture. The current-induced motion of magnetic domain walls is controlled by the length of the current pulse. The motion of magnetic domain walls induced by spin-polarized current has considerable potential for use in magnetic memory and logic devices. Key to the success of these devices is the precise positioning of individual domain walls along magnetic nanowires, using current pulses. We show that domain walls move surprisingly long distances of several micrometers and relax over several tens of nanoseconds, under their own inertia, when the current stimulus is removed. We also show that the net distance traveled by the domain wall is exactly proportional to the current pulse length because of the lag derived from its acceleration at the onset of the pulse. Thus, independent of its inertia, a domain wall can be accurately positioned using properly timed current pulses.

Resonant amplification of magnetic domain-wall motion by a train of current pulses.

The current-induced motion of magnetic domain walls confined to nanostructures is of interest for applications in magnetoelectronic devices in which the domain wall serves as the logic gate or memory element. The injection of spin-polarized current below a threshold value through a domain wall confined to a pinning potential results in its precessional motion within the potential well. We show that by using a short train of current pulses, whose length and spacing are tuned to this precession frequency, the domain walls oscillations can be resonantly amplified. This makes possible the motion of domain walls with much reduced currents, more than five times smaller than in the absence of resonant amplification.

Large current modulation in exfoliated-graphene/MoS2/metal vertical heterostructures

Graphene-based vertical field effect transistors have attracted considerable attention in the light of realizing high-speed switching devices; however, the functionality of such devices has been limited by either their small ON-OFF current ratios or ON current densities. We fabricate a graphene/MoS2/metal vertical heterostructure by using mechanical exfoliation and dry transfer of graphene and MoS2 layers. The van der Waals interface between graphene and MoS2 exhibits a Schottky barrier, thus enabling the possibility of well-defined current rectification. The height of the Schottky barrier can be strongly modulated by an external gate electric field owing to the small density of states of graphene. We obtain large current modulation exceeding 10^5 simultaneously with a large current density of ~10^4 A/cm^2 , thereby demonstrating the superior performance of the exfoliated-graphene/MoS2/metal vertical field effect transistor

Electrical Spin Injection into Graphene through Monolayer Hexagonal Boron Nitride

We demonstrate electrical spin injection from a ferromagnet to a bilayer graphene (BLG) through a monolayer (ML) of single-crystal hexagonal boron nitride (h-BN). A Ni81Fe19/ML h-BN/BLG/h-BN structure is fabricated using a micromechanical cleavage and dry transfer technique. The transport properties across the ML h-BN layer exhibit tunnel barrier characteristics. Spin injection into BLG has been detected through non local magnetoresistance measurements.

Magnetotransport study of temperature dependent magnetic anisotropy in a (Ga,Mn)As epilayer

The anisotropic magnetotransport properties of a (Ga,Mn)As epilayer and the magnetization switching are studied as a function of temperature. The magnetization switching field shows asymmetry for crystallographically equivalent [110] and [110] directions at 4 K, and the asymmetry is more significant at 40 K. The magnetization switching features clearly show that cubic magnetocrystalline anisotropy along 〈100〉, which is biased by a small uniaxial anisotropy along the [110] easy axis, is dominant at 4 K. On the other hand, the [110] uniaxial anisotropy competes with the cubic anisotropy and dominates the magnetization switching at 40 K. Accordingly, the magnetization reversal in the (Ga,Mn)As epilayer occurs via 90° and 180° domain-wall displacement at 4 and 40 K, respectively. A mechanism of the change in the magnetic anisotropy is discussed within a theoretical description of the hole band structure.

Topological repulsion between domain walls in magnetic nanowires leading to the formation of bound states

Head-to-head and tail-to-tail magnetic domain walls in nanowires behave as free magnetic monopoles carrying a single magnetic charge. Since adjacent walls always carry opposite charges, they attract one another. In most cases this long-range attractive interaction leads to annihilation of the two domain walls. Here, we show that, in some cases, a short-range repulsive interaction suppresses annihilation of the walls, even though the lowest energy state is without any domain walls. This repulsive interaction is a consequence of topological edge defects that have the same winding number. We show that the competition between the attractive and repulsive interactions leads to the formation of metastable bound states made up of two or more domain walls. We have created bound states formed from up to eight domain walls, corresponding to the magnetization winding up over four complete 360° rotations.

Enhanced stochasticity of domain wall motion in magnetic racetracks due to dynamic pinning

Understanding the details of domain wall (DW) motion along magnetic racetracks has drawn considerable interest in the past few years for their applications in non-volatile memory devices. The propagation of the DW is dictated by the interplay between its driving force, either field or current, and the complex energy landscape of the racetrack. In this study, we use spin-valve nanowires to study field-driven DW motion in real time. By varying the strength of the driving magnetic field, the propagation mode of the DW can be changed from a simple translational mode to a more complex precessional mode. Interestingly, the DW motion becomes much more stochastic at the onset of this propagation mode. We show that this unexpected result is a consequence of an unsustainable gain in Zeeman energy of the DW, as it is driven faster by the magnetic field. As a result, the DW periodically releases energy and thereby becomes more susceptible to pinning by local imperfections in the racetrack.

Electric field modulation of Schottky barrier height in graphene/MoSe2 van der Waals heterointerface

We demonstrate a vertical field-effect transistor based on a graphene/MoSe2 van der Waals (vdW) heterostructure. The vdW interface between the graphene and MoSe2 exhibits a Schottky barrier with an ideality factor of around 1.3, suggesting a high-quality interface. Owing to the low density of states in graphene, the position of the Fermi level in the graphene can be strongly modulated by an external electric field. Therefore, the Schottky barrier height at the graphene/MoSe2 vdW interface is also modulated. We demonstrate a large current ON-OFF ratio of 105. These results point to the potential high performance of the graphene/MoSe2 vdW heterostructure for electronics applications.