Rainer Kiewitt

Ferroelectric thin films for integrated passive components

Abstract Miniaturisation and integration of passive components play an important role in todays components market. It can be achieved by applying thin-film technologies for capacitors, resistors and inductors; high component densities have been realised with ‘Passive Only Networks’. The dielectric materials used for integrated thin-film capacitors ranging from Si3N4, Ta2O5, TiO2 to earth alkaline as well as lead perovskite layers are reviewed. The capacitor performances including temperature stability, insulation resistance, breakdown fields and endurance are discussed as a function of material composition.

Oxide Films for Integrated Capacitors in Thin Film Functional Modules

Single oxide films as well as complex oxide films are intensively studied for multi-chip modules with integrated passive functions. In this paper the processing and properties of oxide films such as Ta 2 O 5 , TiO 2 , Nb 2 O5, Ta 2 O 5 -Al 2 O 3 , Ta 2 O 5 –Nb 2 O 5 as well as complex oxide films such as BiNbO 4 and Ba 1划x Sr x TiO 3 films will be discussed with respect to their integration into thin film functional modules.

Multiport S-Parameter Measurements of Linear Circuits With Open Ports

A simple technique to measure the S-parameters of a linear multiport with a two-port network analyzer is evaluated. Just two probes and a single specimen are required. All two-port combinations are measured with the other ports left open. Special care was taken to estimate the maximum measurement uncertainties and to identify critical parameter values. Results can be further improved by using a simplified weighting scheme or by correcting for open-port capacitances. The technique is especially suited for wafer probes

Thin Film Decoupling Circuits, Making Use of a Three-dimensional Integration of Thin Film Passive Components

In electronic circuits besides active devices a major part of the components are discrete passive components such as capacitors, resistors and inductors. Especially in the telecommunication circuits, miniaturisation is a major issue. To achieve a high degree of miniaturisation of passive components, thin film processes have been applied. A thin film module for high frequency applications has been demonstrated with a three-dimensional integration of a thin film resistor, a thin film X7R capacitor and a thin film NP0 capacitor processed on top of each other.