Raju Chetty

Tetrahedrites as thermoelectric materials: an overview

Tetrahedrites are natural earth-abundant minerals consisting of environmentally-friendly elements of copper and sulphur. Recently, research has been focused on the natural and synthetic minerals of tetrahedrite materials for thermoelectric applications. The thermoelectric figure of merit zT of around unity at ∼723 K for many doped and natural tetrahedrite materials in the past 2–3 years was determined and this value is comparable to conventional p-type TE materials. In this review, a brief history of tetrahedrite materials is followed by information about its crystal structure and chemical bonding, electronic band structure and transport properties. Different synthesis approaches have been summarized. Also, this review outlines the effect of different doping elements on the thermoelectric properties of tetrahedrite materials, and the natural mineral tetrahedrite that can be used as thermoelectric materials.

Thermoelectric properties of In and I doped PbTe

A systematic study of structural, microstructural, and thermoelectric properties of bulk PbTe doped with indium (In) alone and co-doped with both indium and iodine (I) has been done. X-ray diffraction results showed all the samples to be of single phase. Scanning electron microscopy (SEM) results revealed the particle sizes to be in the range of micrometers, while high resolution transmission electron microscopy was used to investigate distinct microstructural features such as interfaces, grain boundaries, and strain field domains. Hall measurement at 300 K revealed the carrier concentration ∼1019 cm−3 showing the degenerate nature which was further seen in the electrical resistivity of samples, which increased with rising temperature. Seebeck coefficient indicated that all samples were n–type semiconductors with electrons as the majority carriers throughout the temperature range. A maximum power factor ∼25 μW cm−1 K−2 for all In doped samples and Pb0.998In0.003Te1.000I0.003 was observed at 700 K. Doping ...

High temperature XRD of Cu2.1Zn0.9SnSe4

Quaternary compound with chemical composition Cu2.1ZnSnSe4 is prepared by solid state synthesis. High temperature XRD (X-Ray Diffraction) of this compound is used in studying the effect of temperature on lattice parameters and thermal expansion coefficients. Thermal expansion coefficient is one of the important quantities in evaluating the Gruneisen parameter which further useful in determining the lattice thermal conductivity of the material. The high temperature XRD of the material revealed that the lattice parameters as well as thermal expansion coefficients of the material increased with increase in temperature which confirms the presence of anharmonicty.

High temperature XRD of Cu2GeSe3

The Cu2GeSe3 is prepared by solid state synthesis method. The high temperature XRD has been done at different temperature from 30 °C to 450 °C. The reitveld refinement confirms Cu2GeSe3 phase and orthorhombic crystal structure. The lattice constants are increasing with increase in the temperature and their rate of increase with respect to temperature are used for finding the thermal expansion coefficient. The calculation of the linear and volume coefficient of thermal expansion is done from 30 °C to 400 °C. Decrease in the values of linear expansion coefficients with temperature are observed along a and c axis. Since thermal expansion coefficient is the consequence of the distortion of atoms in the lattice; this can be further used to find the minimum lattice thermal conductivity at given temperature.

Thin Film Thermoelectric Materials for Sensor Applications: An Overview

The modern world depends completely on electricity, the demand for which is increasing day by day. However, carbon-based fuels for power generation and transportation being currently used, e.g., coal, petroleum, etc., are expected to ultimately deplete, due to which there is an urgent need for non-conventional energy sources. At the same time, a large (~60 %) amount of heat is wasted from these industries and vehicles, which will increase further with economic growth and industrialization. Other renewable sources have their own limitations and many are region-specific. Thermoelectric (TE) materials are a means of utilization of waste heat on a small scale by directly converting it into electricity. The generated voltage also finds application in several types of sensors. In addition, these materials can be used for cooling, which is equivalent to direct conversion of electricity into heat, without using any harmful chlorofluorocarbon (CFC) gases. This chapter is intended to give an overview of thin film thermoelectric materials with a focus on their application as different sensors.

Elastic Properties Of Sulphur And Selenium Doped Ternary PbTe Alloys By First Principles

Lead telluride (PbTe) is an established thermoelectric material which can be alloyed with sulphur and selenium to further enhance the thermoelectric properties. Here, a first principles study of ternary alloys PbSxTe(1-x) and PbSexTe(1-x) (0 <= x <= 1) based on the Virtual Crystal Approximation (VCA) is presented for different ratios of the isoelectronic atoms in each series. Equilibrium lattice parameters and elastic constants have been calculated and compared with the reported data. Anisotropy parameter calculated from the stiffness constants showed a slight improvement in anisotropy of elastic properties of the alloys over undoped PbTe. Furthermore, the alloys satisfied the predicted stability criteria from the elastic constants, showing stable structures, which agreed with the previously reported experimental results.