Ralph Whaley

Effect of H2 on the etch profile of InP/InGaAsP alloys in Cl2/Ar/H2 inductively coupled plasma reactive ion etching chemistries for photonic device fabrication

This study demonstrates etch profile engineering of InP, In1−xGaxAs1−yPy, and In0.53Ga0.47As heterostructures results from adding H2 to standard Cl2/Ar inductively coupled plasma-reactive ion etching chemistries. Etch rate curves of bulk InP, In1−xGaxAs1−yPy, and In0.53Ga0.47As show a general parabolic trend as a function of the H2 component of the Cl2/Ar/H2 ratio. Three distinct etching profiles of InP/InGaAsP layers were realized by varying the Cl2/Ar/H2 ratio. Highly anisotropic profiles result for Cl2/Ar/H2 ratios between 2/3/1 and 2/3/2. Waveguiding structures fabricated using this technology are presented with a loss as low as 2 dB/cm. An InP racetrack resonator with a quality factor (Q)>8000 is also presented.

Observation of low optical overlap mode propagation in nanoscale indium phosphide membrane waveguides

The authors have developed a nanoscale, rib-loaded waveguide that propagates a low optical overlap mode (LOOM) in which less than 1% of the modal field energy resides in the semiconductor material. Because of the small modal fill factor, the potential for extremely low waveguide propagation loss, on the order of 0.001dB or less, is predicted. Elevated membrane waveguides, 50nm thick with a 50nm thick rib, have been fabricated in InP using a multistep microelectromechanical release process. Both transverse electric and transverse magnetic LOOM propagations have been observed and measurements are compared to theoretical predictions.

Low optical overlap mode (LOOM) propagation in InP nanoscale membrane waveguides

A guided low optical overlap mode (LOOM) has a modal confinement factor below 1% and potential for extremely low loss. We demonstrate TM LOOM propagation in planar 50-nm-thick InP membrane waveguides and compare to theory.

Indium-Phosphide-Based Mutation-Designed Optical Waveguides for Application

Altering morphology at scales insensible to optical waves by nanofabrication mutates optical properties of semiconductors. Low-optical-overlap modes (LOOMs) are capable of ultra-low propagation loss, nonlinearity and dispersion in high power and signal processing applications.