Ramnath Venkatraman

Integration and reliability of copper magnesium alloys for multilevel interconnects

This paper discusses the deposition, integration, performance, and reliability of copper-magnesium alloys in interconnect structures for state of the art integrated circuits. A detailed discussion of process-related characteristics will be presented. Special emphasis is given here on the adhesion and diffusion properties of copper-magnesium. Furthermore, electrical performance of test structures using copper-magnesium and results from electromigration testing are being presented.

CVD Cu process integration for sub-0.25 /spl mu/m technologies

This paper discusses CVD Cu process development and back-end dual-inlaid integration of CVD Cu on sub-0.25 /spl mu/m device structure. CVD Cu was deposited on a variety of barriers, including CVD TiN, PVD Ta, PVD TaN and a hybrid barrier, using a direct liquid delivery (DLI) system. Excellent step coverage and via/trench filling were observed. Low sheet resistivity and low contact resistance have been obtained through a CVD/PVD reflow process using CVD TiN and hybrid barriers. The extendability of the CVD Cu based process technology is also discussed.