Randall J. St. Pierre

Xenon target performance characteristics for laser-produced plasma EUV sources

Laser-produced plasmas (LPPs) are being developed as light sources for EUV lithography. To meet the requirements for high-volume manufacturing, LPP EUV sources must generate intense EUV output in the 13.5 nm band, and minimize source-induced degradation of EUV optics allowing hundreds of hours of clean operation. Xenon has been identified as a promising target material for LPP EUV light sources, with the potential for both high-efficiency EUV generation, and low optics contamination. Several dense xenon target configurations have been tested including aerosol sprays, continuous liquid streams, condensed xenon droplets, and frozen solid xenon. Important LPP performance characteristics, such as conversion efficiency, EUV radiation distribution, EUV optics degradation by material erosion and/or deposition, and the physical interface to the EUV optical system, are strongly influenced by the xenon target design. The performance of xenon targets with measured conversion efficiencies in the 0.4 percent to 1.4 percent range is reported. Prospects for xenon targets to reach the EUV power generation and contamination goals for production lithography tools are addressed.

Laser-produced plasma (LPP) scale-up and commercialization

An EUV light source, created when a high-average power (750 W) Nd:YAG laser forms a plasma in a xenon liquid-spray jet, has been characterized. This source has shown improved conversion from laser to EUV, and a more uniform angular distribution, as the laser pulse energy and average power are increased. System performance has been analyzed and compared with the requirements for future EUV microlithography tools for semiconductor manufacturing. EUV power scaling requirements and factors influencing Cost-of-Ownership are discussed.

One Joule Per Pulse, 100 Watt, Diode-Pumped, Near Diffraction Limited, Phase Conjugated, Nd:YAG Master Oscillator Power Amplifier

We have assembled and tested a diode-pumped, phase conjugated Nd:YAG master oscillator power amplifier (PC MOPA) operating at an average power of 100 Watts. 1 J per pulse has been extracted at a repetition rate of 100 Hz with a beam quality (BQ) of 1.1 x diffraction limited (D.L.). This combination of average power and beam quality makes this the brightest short pulse solid-state laser reported to date. The optical efficiency of 22% and the overall efficiency of 9.4% also represent record performance for high energy short pulse lasers. Excellent spatial uniformity and a pulse length of 7 ns make this laser ideal for frequency doubling and parametric conversion.

System and process learning in a full-field, high-power EUVL alpha tool

Full-field imaging with a developmental projection optic box (POB 1) was successfully demonstrated in the alpha tool Engineering Test Stand (ETS) last year. Since then, numerous improvements, including laser power for the laser-produced plasma (LPP) source, stages, sensors, and control system have been made. The LPP has been upgraded from the 40 W LPP cluster jet source used for initial demonstration of full-field imaging to a high-power (1500 W) LPP source with a liquid Xe spray jet. Scanned lithography at various laser drive powers of >500 W has been demonstrated with virtually identical lithographic performance.

Diode-array-pumped kilowatt laser

The Diode Array Pumped Kilowatt Laser (DAPKL) has demonstrated more than an order of magnitude increase in brightness and average power for short pulse diode-pumped solid-state lasers since its inception in 1991. Significant advances in component technology has been demonstrated, including development of a diffusion bonding process for producing large slabs of Nd:YAG laser material. Phase conjugation by stimulated Brillouin scattering has been demonstrated with high reflectivity and fidelity in a simple focused geometry with input powers of 100 W. Pulse energies at 1.06 μm of up to 10 J per pulse have been demonstrated with a beam quality of 1.25 times diffraction limited at 33 Hz. An average power of 940 Watts at 100 Hz has been obtained with two times diffraction limited beam quality. Efficient frequency doubling with an average power of 165 W has been demonstrated with 5 J per pulse at 0.53 μm. The system has been packaged in a compact brassboard for long term stability and reliability of operation.

Modeling high-brightness kW solid state lasers

Several kW-class solid-state lasers at TRW are described with an emphasis on the performance modeling used to aid development of high brightness operation. Comparisons of results and analysis are presented for key aspects of high power, diode pumped, Nd:YAG lasers and amplifiers that use zigzag slab configurations to minimize thermal effects. Devices described include multi-kW power oscillators suitable for high power machining, welding, and material processing; and phase conjugated master oscillator/power amplifiers (MOPAs) which provide short pulse, high brightness beams for active tracking, photolithography, or remote sensing. Laboratory measurements are in good agreement with predictions of diode pump profile and absorption efficiency; slab extraction efficiency and thermal load; and slab OPD.

A 900 W high-brightness diode-pumped Nd:YAG phase-conjugated laser

A short-pulse, single-mode, diode-pumped Nd:YAG laser based on phase-conjugated MOPA architecture produces 928 Watts at 2500 Hz with BQ~ 1.1 xDL.

One joule per pulse, 100-W diode-pumped, near-diffraction-limited, phase-conjugated Nd:YAG master oscillator power amplifier

We have assembled and tested a diode-pumped, phase conjugated Nd:YAG master oscillator power amplifier (PC MOPA) operating at an average power of 100 Watts. One joule per pulse has been extracted at a repetition rate of 100 Hz with a beam quality (BQ) of 1.1 x diffraction limited (D.L.). This combination of average power and beam quality makes this the brightest short pulse solid-state laser reported to date. The optical efficiency of 22% and the overall efficiency of 9.4% also represent record performance for high energy short pulse lasers. Excellent spatial uniformity and a pulse length of 7 ns make this laser ideal for frequency doubling and parametric conversion.