Ranga Kamaladasa

Theory of dynamical electron channeling contrast images of near-surface crystal defects

This paper describes the dynamical simulation of electron channeling contrast images (ECCIs) of dislocations. The approach utilizes both the Bloch wave formalism and the scattering matrix formalism to generate electron channeling patterns (ECPs). The latter formalism is then adapted to include the effect of lattice defects on the back-scattered electron yield, resulting in a computational algorithm for the simulation of ECCIs. Dislocations of known line direction and Burgers vector are imaged experimentally by ECCI and match well with simulated ECCIs for various channeling conditions. Experiment/simulation comparisons for ECPs and ECCIs are demonstrated for metals (Al), semiconductors (Si), and ceramics (SrTiO₃).

Local heating-induced plastic deformation in resistive switching devices

Resistive switching is frequently associated with local heating of the switching structure. The mechanical effect of such heating on Pt/SrTiO3 (001) Schottky barriers and on Pt/SrZrO3/SrRuO3/SrTiO3 switching devices was examined. The extent and magnitude of Joule heating was assessed using IR microscopy at power dissipation levels similar to what others have reported during electroforming. Lines aligned along the [100] and [010] directions were observed spreading laterally around the locally heated area imaged by IR. Atomic force microscopy, transmission electron microscopy. and electron channeling contrast imaging suggest these lines are slip lines due to the plastic deformation induced by the local compressive stresses created by Joule heating. The deformation pattern is identical to that produced by nanoindentation. The implications of deformation for resistive switching systems are discussed.

In Situ TEM Imaging of Defect Dynamics under Electrical Bias in Resistive Switching Rutile-TiO 2

In this study, in situ electrical biasing was combined with transmission electron microscopy (TEM) in order to study the formation and evolution of Wadsley defects and Magnéli phases during electrical biasing and resistive switching in titanium dioxide (TiO2). Resistive switching devices were fabricated from single-crystal rutile TiO2 substrates through focused ion beam milling and lift-out techniques. Defect evolution and phase transformations in rutile TiO2 were monitored by diffraction contrast imaging inside the TEM during electrical biasing. Reversible bipolar resistive switching behavior was observed in these single-crystal TiO2 devices. Biased induced reduction reactions created increased oxygen vacancy concentrations to such an extent that shear faults (Wadsley defects) and oxygen-deficient phases (Magnéli phases) formed over large volumes within the TiO2 TEM specimen. Nevertheless, the observed reversible formation/dissociation of Wadsley defects does not appear to correlate to resistive switching phenomena at these length scales. These defect zones were found to reversibly reconfigure in a manner consistent with charged oxygen vacancy migration responding to the applied bias polarity.

Dislocation impact on resistive switching in single-crystal SrTiO3

Filamentary conduction via dislocations has been considered to be a mechanism driving resistive switching in SrTiO3 single-crystals. This possible mechanism is further investigated by fabricating Pt-SrTiO3-Pt lateral devices on high dislocation density areas as well as dislocation-free areas of single-crystal SrTiO3, and using electron channeling contrast imaging and dislocation-selective wet chemical etching to track pre-existing dislocations and dislocations nucleated during electrical biasing. Device size, compliance levels, and vacancy concentration were observed to impact dislocation formation. The susceptibility of SrTiO3 to dislocation formation and strategies to avoid it by reducing power dissipation are discussed. The presence of dislocations is found to have a negligible effect on the device resistive switching behavior. Dislocation-free resistive switching devices are demonstrated for reduced single-crystalline SrTiO3.

Mechanism of localized electrical conduction at the onset of electroforming in TiO2 based resistive switching devices

The onset of localized current conduction during electroforming of TiO2-based resistive switching devices is investigated using a pulsed voltage method. The temperature rise at electroforming onset is found to vary from 25 to 300 °C as the pulse amplitude and the width are varied between 3–8 V and 10 ns–100 ms, respectively. The effective activation energy of the forming event is strongly electric field dependent and decreases from 0.7 eV at 3 V to almost zero at 8 V. The functional form of this dependence points toward charge trapping as the mechanism rather than oxygen vacancy motion.

Future Prospects for Defect and Strain Analysis in the SEM via Electron Channeling

Electron diffraction in both SEM and TEM provides a contrast mechanism for imaging defects as well as a means for quantifying elastic strain. Electron backscatter diffraction (EBSD) is the commercially established method for SEM-based diffraction analysis. In EBSD, Kikuchi patterns are acquired by a charge-coupled device (CCD) camera and indexed using commercial software. Phase and crystallographic orientation information can be extracted from these Kikuchi patterns, and researchers have developed cross-correlation methods to measure strain as well.

Identifying threading dislocations in GaN films and substrates by electron channelling

Electron channelling contrast imaging of threading dislocations in GaN (0002) substrates and epitaxial films has been demonstrated using a conventional polepiece‐mounted backscatter detector in a commercial scanning electron microscope. The influence of accelerating voltage and diffraction vector on contrast features denoting specific threading dislocation types has been studied. As confirmed by coordinated transmission electron microscopy analysis, electron channelling contrast imaging contrast features for edge‐type threading dislocations are spatially smaller than mixed‐type threading dislocations in GaN. This ability to delineate GaN edge threading dislocations from mixed type was also confirmed by defect‐selective etch processing using molten MgO/KOH. This study validates electron channelling contrast imaging as a nondestructive and widely accessible method for spatially mapping and identifying dislocations in GaN with wider applicability for other single‐crystal materials.