Ranko Heindl

Switching Distributions for Perpendicular Spin-Torque Devices Within the Macrospin Approximation

We model “soft” error rates for writing (WSER) and for reading (RSER) for spin-torque memory devices that have a free layer with easy axis perpendicular to the film plane by solving the Fokker-Planck equation for the probability distribution of the angle that the free layer magnetization makes with the normal to the plane of the film. We obtain: 1) an exact, closed form, analytical expression for the zero-temperature switching time as a function of initial angle; 2) an approximate analytical expression for the distribution function of the direction of the magnetization and the exponential decay of the WSER as a function of the time the current is applied; 3) comparison of the approximate analytical expressions for the distribution function and WSER to numerical solutions of the Fokker-Planck equation; 4) an approximate analytical expression for the distribution function and WSER for the case in which the pinned layer is not collinear with the perpendicular free layer; 5) an approximate analytical expression for the linear increase in RSER with current applied for reading; 6) comparison of the approximate analytical formula for the RSER to the numerical solution of the Fokker-Planck equation; and 7) confirmation of the accuracy of the Fokker-Planck solutions by comparison with results of direct simulation using the single-macrospin Landau-Lifshitz-Gilbert equations with a random fluctuating field in the short-time regime for which the latter is practical. We find that the WSER decays at long times as exp[-2(i-1)τ] where the reduced time τ is related to the switching time, Gilbert damping and precession frequency through τ = αω0t, and the reduced current i is the ratio of the applied current to the critical current density for switching i=I̅/I0 . This exponentially decaying tail in WSER is not easily reduced by tilting the pinned layer magnetization.

Validity of the thermal activation model for spin-transfer torque switching in magnetic tunnel junctionsa)

We have performed spin-transfer torque switching experiments with a large number of trials (up to 107 switching events) on nanoscale MgO magnetic tunnel junctions in order to test the validity and the limits of the thermal activation model for spin-torque-assisted switching. Three different methods derived from the model (“read disturb rate,” “switching voltage versus pulse duration,” and “switching voltage distribution” measurements) are used to determine the thermal stability factor and the intrinsic switching voltage. The results obtained from the first two methods agree well with each other as well as with values obtained from quasistatic measurements, if we use only the data for which the voltage is smaller than approximately 0.8 of the intrinsic switching voltage. This agreement also shows that, in our samples, in the low voltage region, the influence from other factors contributing to the switching (such as current-induced heating and field-like torque) is negligible. The third method (switching vo...

Picotesla Magnetic Sensors for Low-Frequency Applications

We demonstrate a simple low-power, magnetic sensor system suitable for high-sensitivity magnetic-field mapping, based on solid-state magnetic tunnel junction devices with minimum detectable fields in a 100 pT range at room temperature. In this paper, we discuss a method that uses multilayer thin films to improve the performance of the soft ferromagnetic layer in magnetoresistive sensor applications, by reducing the coercivity and/or improving the reversibility. We have used it in the design of our new magnetic sensor. This sensor has a sensitivity as high as 750%/mT. The magnetic sensor only dissipates 1 mW of power while operating under an applied voltage of 1 V.

Broadband ferromagnetic resonance linewidth measurement of magnetic tunnel junction multilayers

The broadband ferromagnetic resonance (FMR) linewidth of the free layer of magnetic tunnel junctions is used as a simple diagnostic of the quality of the magnetic structure. The FMR linewidth increases near the field regions of free layer reversal and pinned layer reversal, and this increase correlates with an increase in magnetic hysteresis in unpatterned films, low-frequency noise in patterned devices, and previous observations of magnetic domain ripple by use of Lorentz microscopy. Postannealing changes the free layer FMR linewidth, indicating that considerable magnetic disorder, originating in the exchange-biased pinned layer, is transferred to the free layer.

Size dependence of intrinsic spin transfer switching current density in elliptical spin valves

We studied current-induced magnetization reversal in elliptical spin valves with CoFeB free layers. The data obtained from high-speed pulsed switching experiments showed that the intrinsic switching current densities were size dependent and 50%–100% higher than predicted by a single-domain model. Micromagnetic simulations reveal a complex behavior of magnetization switching in which end-mode oscillations are important, and indicate that the switching current density depends on the device dimensions. Experimental values for the intrinsic switching current density agree with those predicted by micromagnetic simulations.

Correlation of anomalous write error rates and ferromagnetic resonance spectrum in spin-transfer-torque-magnetic-random-access-memory devices containing in-plane free layers

In a small fraction of magnetic-tunnel-junction-based magnetic random-access memory devices with in-plane free layers, the write-error rates (WERs) are higher than expected on the basis of the macrospin or quasi-uniform magnetization reversal models. In devices with increased WERs, the product of effective resistance and area, tunneling magnetoresistance, and coercivity do not deviate from typical device properties. However, the field-swept, spin-torque, ferromagnetic resonance (FS-ST-FMR) spectra with an applied DC bias current deviate significantly for such devices. With a DC bias of 300 mV (producing 9.9 × 106 A/cm2) or greater, these anomalous devices show an increase in the fraction of the power present in FS-ST-FMR modes corresponding to higher-order excitations of the free-layer magnetization. As much as 70% of the power is contained in higher-order modes compared to ≈20% in typical devices. Additionally, a shift in the uniform-mode resonant field that is correlated with the magnitude of the WER an...

Time-domain analysis of spin-torque induced switching paths in nanoscale CoFeB/MgO/CoFeB magnetic tunnel junction devices

We performed thousands of single-shot, real-time measurements of spin-transfer-torque induced switching in nanoscale CoFeB/MgO/CoFeB magnetic tunnel junctions having in-plane magnetizations. Our investigation discovered a variety of switching paths occurring in consecutive, nominally identical switching trials of a single device. By mapping the voltage as a function of time to an effective magnetization angle, we determined that reversal of a single device occurs via a variety of thermally activated paths. Our results show a complex switching behavior that has not been captured by previous observations and cannot be fully explained within the simple macrospin model.