Raphaël Dubé-Demers

Analytical Modeling of Silicon Microring and Microdisk Modulators With Electrical and Optical Dynamics

We propose an analytical time-domain model for microring and microdisk modulators, which considers both their electrical and optical properties. Theory of the dynamics of microring/microdisk is discussed, and general solutions to the transfer matrix representation are presented. Both static and dynamic predictions from the model are compared to measurement results to demonstrate the accuracy of our model. Static predictions and measurements are presented for power and phase responses, whereas dynamic predictions and measurements are presented for small-signal and large-signal operations. The model verifies that the chirping and modulation bandwidth of the modulators depend on the detuning state. Finally, the accuracy and scalability of several techniques employed in the model are discussed.

Low-power DAC-less PAM-4 transmitter using a cascaded microring modulator

Future super-computer interconnect systems and data centers request ultrahigh data rate links at low cost and power consumption, for which transmitters with a high level of integration and spectral efficient formats are key components. We report 60 Gb/s pulse-amplitude modulation (PAM-4) of an optical signal using a dual-microring silicon photonics circuit, making a low-power, digital-to-analog converter (DAC)-less PAM modulator. The power consumption is evaluated below 100 fJ/bit, including thermal adjustments. To the best of our knowledge, these results feature the lowest reported power consumption for PAM signaling in a DAC-less scheme for data rate beyond 40 Gb/s.

Analytical modeling for ultra-high-speed microring modulators with electrical and optical dynamics

We propose an analytical, time-domain model for microring modulators, which encompasses pn-junction and resonator dynamics. It shows excellent agreement with experiment for high frequency operation beyond 20 GHz. Pulse-amplitude modulation is predicted for up to 80 Gb/s.

On-chip multi-level signal generation using cascaded microring modulator

We propose the use of a dual-microring system as an on-chip multi-level signal generator without using an external digital-to-analog converter (DAC). Four-level pulse-amplitude modulation (PAM-4) signals up to 60 Gb/s have been experimentally achieved.

Silicon photonic devices for high-capacity optical interconnects

Low-power, high-speed optical interconnects are essential to future high-performance computers and data centers for the cloud. Using CMOS-compatible silicon photonics processes, we have developed integrated photonic devices, such as 80 Gb/s optical modulators with ultralow power consumption at the level of femtojoule per bit and O-band on-chip wavelength multiplexers. These devices are promising for next-generation 400 Gb/s optical interconnects.

Ultra-fast digital transmission using low-power ring modulator

Ultra-high data rate is required for future cloud computing and interconnects systems, for which integrated optical transceivers provide promising solutions. We report 66 Gb/s, on-off keying (OOK) operation of a silicon microring modulator (MRM) consuming a low power of 15 fJ/bit. To the best of our knowledge, this result features the fastest binary shift keying operation using a MRM.

Microring modulators for power efficient multi-level transmission: How to break the 100 Gbit/s barrier

Silicon photonics enables new pinnacles of large-scale photonic integration, aiming at the need for large bandwidth in next-generation data centers and interconnects systems. Ultra-high data streams are thus required in the smallest footprint using the lowest amount of power possible. On the silicon-on-insulator platform, microring modulators are a promising solution providing desirable compactness and ultra-low-power operation. This paper discusses the latest demonstrations and mechanisms used to approach the 100 Gb/s mark using microring modulators.