Raymond F. DePaula

Temperature-dependent leakage mechanisms of Pt∕BiFeO3∕SrRuO3 thin film capacitors

Epitaxial c-axis oriented BiFeO3 (BFO) thin films were deposited on conductive SrRuO3 (SRO) on (001) SrTiO3 substrates by pulsed laser deposition. A Pt/BFO/SRO capacitor was constructed by depositing a top Pt electrode. The leakage current density versus. electric field characteristics were investigated from 80to350K. It was found that the leakage mechanisms were a strong function of temperature and voltage polarity. At temperatures between 80 and 150K, space-charge-limited current was the dominant leakage mechanism for both negative and positive biases. On the other hand, at temperatures between 200 and 350K the dominant leakage mechanisms were Poole-Frenkle emission and Fowler-Nordheim tunneling for negative and positive biases, respectively.

High-T/sub c/ coated conductors-performance of meter-long YBCO/IBAD flexible tapes

One meter long tapes based on 50-100 /spl mu/m thick by 1 cm wide nickel alloy substrates have been coated in a continuous process with a textured yttria-stabilized zirconia layer by ion beam-assisted deposition, followed by a 1-2 /spl mu/m thick layer of YBCO by pulsed laser deposition. The best result to date is a tape with a critical current (I/sub c/) at 75 K of 96 A over an 87 cm measurement length. The overall critical current density and engineering current density are 1 MA/cm/sup 2/ and 10 kA/cm/sup 2/, respectively. Using a special probe, individual I-V curves were generated for each centimeter of tape length in order to investigate longitudinal uniformity of the transport properties: the highest and lowest I/sub c/ values fall within a range of /spl plusmn/25%.

Rectifying current-voltage characteristics of BiFeO3∕Nb-doped SrTiO3 heterojunction

Epitaxial c-axis oriented BiFeO3 (BFO) thin films were deposited on (001) Nb-doped SrTiO3 (Nb-STO) substrates by pulsed laser deposition. Introducing Bi vacancies caused the BFO thin film to evolve to a p-type semiconductor and formed a p-n heterojunction with an n-type semiconductor Nb-STO. The current density versus voltage (J-V) and capacitance versus voltage (C-V) characteristics of the heterojunction were investigated. A typical rectifying J-V effect was observed with a large rectifying ratio of 5×104. Reverse C-V characteristics exhibited a linear 1∕C2 versus V plot, from which a built-in potential of 0.6V was deduced. The results show a potential application of BFO/Nb-STO heterojunction for oxide electronics.

Strongly coupled critical current density values achieved in Y1Ba2Cu3O7−δ coated conductors with near-single-crystal texture

One of the most intensely researched subjects in the development of YBa2Cu3O7−δ (YBCO)-based coated conductors is the methodology for achieving ever-sharper film texture on flexible metal substrates. This is a critical issue due to the intrinsic weak-link behavior that results in depressed critical current density (Jc) in polycrystalline YBCO. Using ion-beam-assisted deposition of magnesium oxide, we have achieved YBCO texture on superalloy substrates approaching that on single-crystal oxide substrates. This advance has allowed us to fabricate coated conductor samples with Jcs that are as high as for films on oxide crystals; for example, >2 MA/cm2 (75 K, self-field) at a YBCO thickness of ∼1.5 μm.

Texture development in IBAD MgO films as a function of deposition thickness and rate

We have examined the effect of film thickness on in-plane texture for ion-beam assisted deposition (IBAD) of MgO films. Plan-view dark-field transmission electron microscopy (TEM) has revealed that texture develops rapidly, reaching its best value at a critical thickness of/spl sim/10 nm. These results have been confirmed by quantifying the in-plane texture of these samples at each thickness with X-ray diffraction /spl phi/-scans. We have also examined the effects of variable deposition rate on texture formation. X-ray diffraction shows that the optimum in-plane texture is achieved at the critical thickness with a rate of 0.2 nm/s. However, TEM imaging has shown that the distribution of well-aligned grains decreases with an increase in rate. As such, deposition at 0.1 nm/s was found to be sufficient for achieving good in-plane distribution values and good surface coverage for subsequent depositions. By combining the results of both of these experiments, we were then able to optimize our deposition process and apply them to the growth of IBAD MgO on metal substrates.

Improvement of IBAD MgO template layers on metallic substrates for YBCO HTS deposition

We present our results to improve ion beam assisted deposition (IBAD) of magnesia (MgO) templates for subsequent YBa/sub 2/Cu/sub 3/O/sub 7-/spl delta// (YBCO) deposition. The substrate surface roughness has a significant effect on the initial nucleation texture of IBAD MgO films. We have found that reduction in our substrate surface roughness to /spl sim/ 3.5 nm has resulted in better in-plane texture for IBAD MgO films than those deposited on rougher metal substrates. We have further improved the IBAD MgO deposition parameters by using an in situ reflected high-energy electron diffraction (RHEED) analysis tool that allows for monitoring of IBAD MgO growth. We have found a direct correlation between the RHEED generated intensity versus time curve and in-plane texture. Utilizing X-ray diffraction analysis, we have been able to determine the optimum deposition parameters to routinely grow films in batch mode that have a phi scan /spl Delta//spl phi/ from 6 - 7/spl deg/. Coupling the improvements in substrate preparation with optimization of IBAD MgO deposition has allowed for both batch and continuous deposition (termed c-IBAD MgO) on metallic substrates that result in superior superconducting properties. We have demonstrated that deposited meter lengths have had phi scan FWHM values from 8 - 9/spl deg/ with /spl plusmn/ 10% uniformity. Additionally, we have been able to widen the processing zone in our system and coat two, one-meter lengths simultaneously while preserving good texture quality (/spl Delta//spl phi//sub ave/ /spl sim/ 8/spl deg/) and uniformity (60 - 80% of tape length within /spl plusmn/ 5% of /spl Delta//spl phi//sub ave/) for both tapes.

Structural and dielectric properties of epitaxial Sm2O3 thin films

Epitaxial Sm2O3 thin films were deposited on (001) SrTiO3 substrates by pulsed laser deposition. The structural and dielectric properties were investigated. Microstructural studies by x-ray diffraction and transmission electron microscopy showed that the Sm2O3 thin films have a cubic structure and an epitaxial relationship of (004)Sm2O3∥(002)SrTiO3 and [440]Sm2O3∥[200]SrTiO3. A high dielectric constant of 30.5 was found, which can be attributed to the cubic structure and the high crystalline quality and shows a potential application of epitaxial Sm2O3 thin film for high-k material.

Advances in YBCO-coated conductor technology

Processes for producing both the YSZ template film by IBAD and the YBCO superconducting film by PLD at 1 m lengths have achieved Ic values of 122 A and Jc values of 1 MA/cm2. Improvements have been made in all stages of the process. Variations of Ic along the length of the 1-m samples stimulated development of a new in-field Ic measurement capability. The use of MgO as an IBAD template film has made great progress and can potentially decrease the time to produce the template film by more than an order of magnitude. A combination of electrical and microstructural investigations are being made to understand and improve the properties of the YBCO coated

Ion-beam assisted deposition of bi-axially aligned MgO template films for YBCO coated conductors

We report the results of experiments with ion-beam-assisted deposition (IBAD) of MgO using in-situ monitoring with Reflected High-Energy Electron Diffraction (RHEED). Strips of polished Haynes 242 and Inconel 625 nickel-based super-alloys have been used as substrates for these experiments. The in-plane texture of the MgO, as measured by X-ray /spl phi/ scan, resulted in FWHM values between 11 and 15/spl deg/. Using pulsed-laser deposition, the IBAD MgO template films were then overcoated with buffer layer films and a final superconducting film of YBa/sub 2/Cu/sub 3/O/sub 7-/spl delta//. The best superconducting transport properties measured on these YBCO films were: an Ic (75 K, self-field, 1 cm wide) of 41.6 A, and a narrow-bridge J/sub c/ (1.35 /spl mu/m thick film) of 0.46 MA/cm/sup 2/.

Leakage mechanisms of self-assembled (BiFeO3)0.5:(Sm2O3)0.5 nanocomposite films

Nanocomposite (BiFeO3)0.5:(Sm2O3)0.5 films were deposited on (001) oriented Nb-doped SrTiO3 substrates by pulsed laser deposition. The leakage current density versus electric field characteristics were investigated and compared with those of as-deposited and annealed pure BiFeO3 (BFO) thin films. The dominant leakage mechanisms of nanocomposite films were space-charge-limited current and Poole–Frenkle emission for positive and negative biases, respectively. The leakage current density of nanocomposite films was reduced three orders of magnitude in comparison with the as-deposited pure BFO films. The less oxygen vacancies in the BFO phase in the nanocomposite is believed to contribute to the leakage reduction.