Raynald Gauvin

A Monte Carlo code to simulate the effect of fast secondary electrons on κAB factors and spatial resolution in the TEM

Fast secondary electrons (FSE), which result from inelastic scattering of incident electrons, are known to generate a significant number of X‐rays for light elements, and also to degrade the spatial resolution of X‐ray microanalysis in thin foils. A Monte Carlo program simulating the generation and diffusion of FSE in binary systems has been developed to study the effect of composition on κAB factors and spatial resolution. The effect of accelerating voltage and thickness is also presented.

Simulation of X-Ray Emission from Rough Surfaces

Abstract. A new Monte Carlo program that simulates the full X-ray spectrum, including the characteristic lines and the background, has been developed for specimen having rough surfaces. It is reported that the shape and the intensity of the X-ray spectrum are a strong function of the beam position. These variations are related to the change of generation and absorption of X-rays as the beam is moved across a rough surface.

Resistless electron beam lithography process for the fabrication of sub-50 nm silicide structures

We report on a study of the fabrication of submicron silicide structures with a resistless lithography technique. Several different metals can be used as a basis for producing silicide using this method; in this work, results will be discussed for both platinum and nickel silicide. The feasibility of producing nanostructures using polycrystalline silicon as a base growth layer for metal–oxide–semiconductor, and other device applications have also been demonstrated. Threshold doses for this method for submicron lines (<50 nm) and square areas were obtained in order to establish a framework for the fabrication of more complex devices. Preliminary electrical measurements were carried out which indicate that the resistivity of the silicide is 45 μΩ cm, and that the barrier height of the silicide/(high resistivity silicon) interface is 0.56 eV.

PROCESS CONTROL, OR CHAOS?

This is the first exploration of using the latest developments in chaos and fractals theory, notably the fractal dimension, to better detect trends on control charts. Capable of measuring the irregularity of a curve, the fractal dimension is at the..