Rebecca J. Welty

GaInP/GaAs collector-up tunneling-collector heterojunction bipolar transistors (C-up TC-HBTs): optimization of fabrication process and epitaxial layer structure for high-efficiency high-power amplifiers

This paper describes a novel heterojunction bipolar transistor (HBT) structure, the collector-up tunneling-collector HBT (C-up TC-HBT), that minimizes the offset voltage V/sub CE,sat/ and the knee voltage V/sub k/. In this device, a thin GaInP layer is used as a tunnel barrier at the base-collector (BC) junction to suppress hole injection into the collector, which results in small V/sub CE,sat/. Collector-up configuration is used because of the observed asymmetry of the band discontinuity between GaInP and GaAs depending on growth direction. To minimize V/sub k/, we optimized the epitaxial layer structure as well as the conditions of ion implantation into the extrinsic emitter and post-implantation annealing. The best results were obtained when a 5-nm-thick 5/spl times/10/sup 17/-cm/sup -3/-doped GaInP tunnel barrier with a 20-nm-thick undoped GaAs spacer was used at the BC junction, and when 2/spl times/10/sup 12/-cm/sup -2/ 50-keV B implantation was employed followed by 10-min annealing at 390/spl deg/C. Fabricated 40/spl times/40-/spl mu/m/sup 2/ C-up TC-HBTs showed almost zero V/sub CE,sat/ (<10 mV) and a very small V/sub k/ of 0.29 V at a collector current density of 4 kA/cm/sub 2/, which are much lower than those of a typical GaInP/GaAs HBT. The results indicate that the C-up TC-HBTs are attractive candidates for high-efficiency high power amplifiers.

X-ray detection by direct modulation of an optical probe beam—Radsensor: Progress on development for imaging applications

We present a progress report on our new x-ray detection technique based on optical measurement of the effects of x-ray absorption and electron hole pair creation in a direct band-gap semiconductor. The electron–hole pairs create a frequency dependent shift in optical refractive index and absorption. This is sensed by simultaneously directing an optical probe beam through the same volume of semiconducting medium that has experienced an x-ray induced modulation in the electron–hole population. If the wavelength of the optical probe beam is close to the semiconductor band-edge, the optical probe will be modulated significantly in phase and amplitude. We have analyzed the physics of the imaging radsensor, developed modeling tools for device design, and are cautiously optimistic that we will achieve single x-ray photon sensitivity, and picosecond response. These predictions will be tested with Cu Kα xrays at the LLNL USP facility this spring and summer, with a cavity-based radsensor detector suitable for use i...

RadSensor: Xray Detection by Direct Modulation of an Optical Probe Beam

We present a new x-ray detection technique based on optical measurement of the effects of x-ray absorption and electron hole pair creation in a direct band-gap semiconductor. The electron-hole pairs create a frequency dependent shift in optical refractive index and absorption. This is sensed by simultaneously directing an optical carrier beam through the same volume of semiconducting medium that has experienced an xray induced modulation in the electron-hole population. If the operating wavelength of the optical carrier beam is chosen to be close to the semiconductor band-edge, the optical carrier will be modulated significantly in phase and amplitude. This approach should be simultaneously capable of very high sensitivity and excellent temporal response, even in the difficult high-energy xray regime. At xray photon energies near 10 keV and higher, we believe that sub-picosecond temporal responses are possible with near single xray photon sensitivity. The approach also allows for the convenient and EMI robust transport of high-bandwidth information via fiber optics. Furthermore, the technology can be scaled to imaging applications. The basic physics of the detector, implementation considerations, and preliminary experimental data are presented and discussed.

Design and performance of tunnel collector HBTs for microwave power amplifiers

AlGaAs/GaAs/GaAs and GaInP/GaAs/GaAs n-p-n heterojunction bipolar transistors (HBTs) are now in widespread use in microwave power amplifiers. In this paper, improved HBT structures are presented to address issues currently problematic for these devices: high offset and knee voltages and saturation charge storage. Reduced HBT offset and knee voltages (V/sub CE,os/ and V/sub k/) are important to improve the power amplifier efficiency. Reduced saturation charge storage is desirable to increase gain under conditions when the transistor saturates (such as in over-driven Class AB amplifiers and switching mode amplifiers). It is shown in this paper that HBT structures using a 100-/spl Aring/-thick layer of GaInP between the GaAs base, and collector layers are effective in reducing V/sub CE,os/ to 30 mV and V/sub k/ measured at a collector current density of 2/spl times/10/sup 4/ A/cm/sup 2/ to 0.3 V (while for conventional HBTs V/sub CE,os/=0.2 V and V/sub k/=0.5 V are typical). A five-fold reduction in saturation charge storage is simultaneously obtained.

Integrated laser with low-loss high index-contrast waveguides for OEICs

Photonic integrated circuits require the ability to integrate both lasers and waveguides with low absorption and coupling loss. This technology is being developed at LLNL for digital logic gates for optical key generation circuits to facilitate secure communications. Here, we demonstrate an approach of integrating InGaAs DQW edge emitting lasers (EEL) with electron beam evaporated dielectric waveguides. The EELs are defined by electron cyclotron resonance etching (ECR). This approach results in highly anisotropic etched mirrors with smooth etched features (sidewall rms roughness = 28 Å, surface rms roughness = 10 Å). The mirror is etched to form both the laser cavity and define the waveguide mesa, which accommodates a dielectric stack, where the core is aligned with the active region of the laser to achieve maximum vertical mode overlapping. The waveguides are based on SiO2/Ta2O5/SiO2 which yields a high index contrast of 0.6, resulting in low loss guides (~2-3dB/cm). The design of the interface has taken into account the waveguide transmission loss, air gap spacing and tilt between the laser and waveguide. The critical feature for this deposition technique is its required high directionality or minimal sidewall deposition and corner effects. In the butt coupled EEL/waveguide system we have measured a slope efficiency to be as high as 0.45 W/A. We have in conclusion demonstrated a technology that allows direct coupling of a dielectric optical interconnect to a semiconductor laser monolithically fabricated on the semiconductor substrate.

Impact of compositionally graded base regions on the DC and RF properties of reduced turn-on voltage InGaP-GaInAsN DHBTs

Built-in drift fields are employed to enhance the performance of GaAs-based heterojunction bipolar transistors (HBTs) with reduced turn-on voltage. Specifically, we explore in detail the dc and RF device property improvements enabled by using compositionally graded GaInAsN base layers. Experimental results are compared to predictions of the standard drift-diffusion base transport model employing a finite exit velocity. In large area devices, graded base samples with built-in fields of /spl sim/7 kV/cm (i.e. 40 meV over 500 /spl Aring/) typically have a dc current gain 1.8/spl times/ larger than constant base composition samples. In small area devices, the peak cut-off frequency is typically 10%-15% higher than constant composition samples. These results are shown to agree reasonably well with predictions, thereby demonstrating that analytical drift-diffusion based models can be extended to HBTs with GaInAsN base layers.

Gain lever characterization in monolithically integrated diode lasers

Gain Lever, an effect for enhancing amplitude modulation (AM) efficiency in multisection laser diodes1, has been characterized in InGaAs DQW edge emitting lasers that are integrated with passive waveguides. Specifically designed structures which give a range of split ratios from 1:1 to 9:1 have been fabricated and measured to fully characterize the parameter space for operation in the gain lever mode. Additionally the experimental results are compared to a hybrid 3-D simulation involving effective index method (EIM) reduction to 2-D. Gains greater than 6 dB in the AM efficiency can be achieved within the appropriate operating range, but this gain drops rapidly as the parameter range is exceeded. High speed RF modulation with significant gain is, in principle, possible if proper biasing and modulation conditions are used. This phenomenon can also be useful for high-speed digital information transmission.