Peter M. Asbeck

Power amplifiers and transmitters for RF and microwave

The generation of RF/microwave power is required not only in wireless communications, but also in applications such as jamming, imaging, RF heating, and miniature dc/dc converters. Each application has its own unique requirements for frequency, bandwidth, load, power, efficiency, linearity, and cost. RF power is generated by a wide variety of techniques, implementations, and active devices. Power amplifiers are incorporated into transmitters in a similarly wide variety of architectures, including linear, Kalm, envelope tracking, outphasing, and Doherty. Linearity can be improved through techniques such as feedback, feedforward, and predistortion.

High-efficiency power amplifier using dynamic power-supply voltage for CDMA applications

Efficiency and linearity of the microwave power amplifier are critical elements for mobile communication systems. This paper discusses improvements in system efficiency that are obtainable when a DC-DC converter is used to convert available battery voltage to an optimal supply voltage for the output RF amplifier. A boost DC-DC converter with an operating frequency of 10 MHz is demonstrated using GaAs heterojunction bipolar transistors. Advantages of 10 MHz switching frequency and associated loss mechanisms are described. For modulation formats with a time-varying envelope, such as CDMA, the probability of power usage is described. Gains in power efficiency and battery lifetime are calculated. An envelope detector circuit with a fast feedback loop regulator is discussed. Effects of varying supply voltage with respect to distortion are examined along with methods to increase system linearity.

Measurement of piezoelectrically induced charge in GaN/AlGaN heterostructure field-effect transistors

Electron concentration profiles have been obtained for AlxGa1−xN/GaN heterostructure field-effect transistor structures. Analysis of the measured electron distributions demonstrates the influence of piezoelectric effects in coherently strained layers on III-V nitride heterostructure device characteristics. Characterization of a nominally undoped Al0.15Ga0.85N/GaN transistor structure reveals the presence of a high sheet carrier density in the GaN channel which may be explained as a consequence of piezoelectrically induced charges present at the Al0.15Ga0.85N/GaN interface. Measurements performed on an Al0.15Ga0.85N/GaN transistor structure with a buried Al0.15Ga0.85N isolation layer indicate a reduction in electron sheet concentration in the transistor channel and accumulation of carriers below the Al0.15Ga0.85N isolation layer, both of which are attributable to piezoelectric effects.

Design of wide-bandwidth envelope-tracking power amplifiers for OFDM applications

An efficiency-enhanced power-amplifier system design is presented based on wide-bandwidth envelope tracking (WBET) with application to orthogonal frequency-division multiplexing wireless local area network systems. Envelope elimination and restoration (EER) and WBET are compared in terms of the time mismatch sensitivity between the base-band amplitude path and the RF path, and it is demonstrated that WBET is much less sensitive than EER to these effects. An adaptive time-alignment algorithm for the WBET system is developed and demonstrated. The analysis and algorithm are verified by experimental results. The measurement shows that the peak drain efficiency of the complete system was 30% at a 2.4-GHz orthogonal frequency-division multiplexing output power of 20 dBm.

An extended Doherty amplifier with high efficiency over a wide power range

An extension of the Doherty amplifier architecture which maintains high efficiency over a wide range of output power (>6 dB) is presented. This extended Doherty amplifier is demonstrated experimentally with InGaP-GaAs HBTs at a frequency of 950 MHz. P/sub 1 dB/ is measured at 27.5 dBm with PAE of 46%. PAE of at least 39% is maintained for over an output power range of 12 dB backed-off from P/sub 1 dB/. This is an improvement over the classical Doherty amplifier, where high efficiency is typically obtained up to 5-6 dB backed-off from P/sub 1 dB/. Generalized design equations for the Doherty amplifier are derived to show a careful choice of the output matching circuit and device scaling parameters can improve efficiencies at lower output power.

High-Efficiency Envelope-Tracking W-CDMA Base-Station Amplifier Using GaN HFETs

A high-efficiency wideband code-division multiple-access (W-CDMA) base-station amplifier is presented using high-performance GaN heterostructure field-effect transistors to achieve high gain and efficiency with good linearity. For high efficiency, class J/E operation was employed, which can attain up to 80% efficiency over a wide range of input powers and power supply voltages. For nonconstant envelope input, the average efficiency is further increased by employing the envelope-tracking architecture using a wide-bandwidth high-efficiency envelope amplifier. The linearity of overall system is enhanced by digital pre-distortion. The measured average power-added efficiency of the amplifier is as high as 50.7% for a W-CDMA modulated signal with peak-to-average power ratio of 7.67 dB at an average output power of 37.2 W and gain of 10.0 dB. We believe that this corresponds to the best efficiency performance among reported base-station power amplifiers for W-CDMA. The measured error vector magnitude is as low as 1.74% with adjacent channel leakage ratio of -51.0 dBc at an offset frequency of 5 MHz

GaAlAs/GaAs heterojunction bipolar transistors: issues and prospects for application

Issues important for the manufacturing of GaAlAs/GaAs heterojunction bipolar transistors (HBTs) and their prospects for application in various areas are discussed. The microwave and digital performance status of HBTs is reviewed. Extrapolated values of maximum frequency of oscillation above 200 GHz and frequency divider operation at 26.9 GHz are reported. Key prospects for further device development are highlighted. >

Open-Loop Digital Predistorter for RF Power Amplifiers Using Dynamic Deviation Reduction-Based Volterra Series

In this paper, we propose an efficient open-loop digital predistorter (DPD) derived from the dynamic deviation reduction-based Volterra series that allows compensation for both nonlinear distortion and memory effects induced by RF power amplifiers in wireless transmitters. In this approach, the parameters of the predistorter can be directly extracted from an offline system identification process. This eliminates the usual requirement for a closed-loop real-time parameter adaptation, which dramatically reduces the implementation complexity of the system. It is shown that a further reduction in system complexity can be achieved by applying under-sampling theory in the model extraction and utilizing parameter interpolation in the DPD implementation. Experimental results show that by utilizing this technique with only a small number of parameters, nonlinear distortion induced by the PA can be significantly reduced, as evaluated by both adjacent channel power ratio reduction and normalized root mean square error improvement. A comparison with a memoryless polynomial function based predistorter and an analysis of the impact of decresting are also presented.

A Monolithic High-Efficiency 2.4-GHz 20-dBm SiGe BiCMOS Envelope-Tracking OFDM Power Amplifier

A monolithic SiGe BiCMOS envelope-tracking power amplifier (PA) is demonstrated for 802.11g OFDM applications at 2.4 GHz. The 4-mm2 die includes a high-efficiency high-precision envelope amplifier and a two-stage SiGe HBT PA for RF amplification. Off-chip digital predistortion is employed to improve EVM performance. The two-stage amplifier exhibits 12-dB gain, <5% EVM, 20-dBm OFDM output power, and an overall efficiency (including the envelope amplifier) of 28%.

Schottky barrier engineering in III–V nitrides via the piezoelectric effect

A method for enhancing effective Schottky barrier heights in III–V nitride heterostructures based on the piezoelectric effect is proposed, demonstrated, and analyzed. Two-layer GaN/AlxGa1−xN barriers within heterostructure field-effect transistor epitaxial layer structures are shown to possess significantly larger effective barrier heights than those for AlxGa1−xN, and the influence of composition, doping, and layer thicknesses is assessed. A GaN/Al0.25Ga0.75N barrier structure optimized for heterojunction field-effect transistors is shown to yield a barrier height enhancement of 0.37 V over that for Al0.25Ga0.75N. Corresponding reductions in forward-bias current and reverse-bias leakage are observed in current–voltage measurements performed on Schottky diodes.