Reine Wallenberg

Crystal field, phonon coupling and emission shift of Mn2+ in ZnS:Mn nanoparticles

The Mn2+ emission wavelengths are at 591, 588, 581 and 570 nm, respectively, for the ∼10, ∼4.5, ∼3.5 nm sized nanoparticles and the ZnS:Mn nanoparticles formed in an ultrastable zeolite-Y. To reveal the cause for the shift, the crystal field and phonon coupling were investigated. The results show that the predominant factor for the shift is the phonon coupling, whose strength is size dependent and is determined by both the size confinement and the surface modification of the nanoparticles. Although the crystal field strength decreases with the decreasing of the particle size, its change has little contribution to the emission shift of Mn2+ in ZnS:Mn nanoparticles.

Growth and characterization of GaAs and InAs nano-whiskers and InAs/GaAs heterostructures

Semiconducting InAs and GaAs nano-whiskers have been grown using a chemical beam epitaxy approach in combination with size-selected catalytic Au aerosol particles. The characterization of InAs and GaAs whiskers shows high crystalline quality as seen by transmission electron microscopy. Gate-dependent transport measurements suggests a diffusive electronic transport mechanism. We have also combined these two material systems by growing a very abrupt heterostructure interface within the whiskers, allowing the growth of highly mismatched structures without misfit dislocations

Effect of impurities on structural and electrochemical properties of the Ni-YSZ interface.

The changes in interface structure and chemical composition of a 99.995% pure nickel/yttria-stabilised zirconia (YSZ) interface were examined after heat treatment at 1000 °C in 97% H2/3% H2O with and without polarisation. Impedance spectroscopy was used for electrochemical characterisation. The results were compared to earlier investigations of a less pure nickel/YSZ interface. The pure interface developed different structures depending on whether or not the samples were polarised. Despite the purity of the nickel, impurities were found in the interfacial region. The pure electrodes/interfaces showed area specific polarisation resistances 10 times lower than the impure interfaces.

Size dependence of Eu2+ fluorescence in ZnS:Eu2+ nanoparticles

The emission bands of the 4.2, 3.2 and 2.6 nm sized ZnS:Eu2+ nanoparticles are peaking at 670, 580 and 520 nm, respectively. The emission of the 4.2 nm sized nanoparticles originates from the recombination of the Eu2+-bound exciton, while the emission of the 3.2 and 2.6 nm sized nanoparticles is from the Eu2+ intra-ion transition of 4f65d1(t2g)–4f7. Possible mechanisms for the size dependence of the 4f65d1(t2g)–4f7 transition of Eu2+ in ZnS:Eu2+ nanoparticles were investigated, and it was concluded that the decreases in the electron–phonon coupling and in crystal field strength upon a decrease in size are the two major factors responsible for the shift.

High transconductance self-aligned gate-last surface channel In 0.53 Ga 0.47 As MOSFET

In this paper we present a 55 nm gate length In0.53Ga0.47As MOSFET with extrinsic transconductance of 1.9 mS/µm and on-resistance of 199 Ωµm. The self-aligned MOSFET is formed using metalorganic chemical vapor deposition regrowth of highly doped source and drain access regions. The fabricated 140 nm gate length devices shows a low subthreshold swing of 79 mV/decade, which is attributed to the described low temperature gate-last process scheme.

Pressure dependence of Mn2+ fluorescence in ZnS : Mn2+ nanoparticles

The photoluminescence of Mn2+ in ZnS:Mn2+ nanoparticles with an average size of 4.5 nm has been measured under hydrostatic pressure from 0 to 6 GPa. The emission position is red-shifted at a rate of -33.3+/-0.6meV/GPa, which is in good agreement with the calculated value of -30.4meV/GPa using the crystal field theory

High-Frequency Performance of Self-Aligned Gate-Last Surface Channel MOSFET

We have developed a self-aligned L_g = 55 nm In_0.53Ga_0.47As MOSFET incorporating metal-organic chemical vapor deposition regrown n⁺⁺ In_0.53Ga_0.47As source and drain regions, which enables a record low on-resistance of 199 Ωμm. The regrowth process includes an InP support layer, which is later removed selectively to the n⁺⁺ contact layer. This process forms a high-frequency compatible device using a low-complexity fabrication scheme. We report on high-frequency measurements showing f_max of 292 GHz and f_t of 244 GHz. These results are accompanied by modeling of the device, which accounts for the frequency response of gate oxide border traps and impact ionization phenomenon found in narrow band gap FETs. The device also shows a high drive current of 2.0 mA/μm and a high extrinsic transconductance of 1.9 mS/μm. These excellent properties are attributed to the use of a gate-last process, which does not include high temperature or dry-etch processes.

Individual Defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors Operating below 60 mV/decade

Tunneling field-effect transistors (TunnelFET), a leading steep-slope transistor candidate, is still plagued by defect response, and there is a large discrepancy between measured and simulated device performance. In this work, highly scaled InAs/InxGa1-xAsySb1-y/GaSb vertical nanowire TunnelFET with ability to operate well below 60 mV/decade at technically relevant currents are fabricated and characterized. The structure, composition, and strain is characterized using transmission electron microscopy with emphasis on the heterojunction. Using Technology Computer Aided Design (TCAD) simulations and Random Telegraph Signal (RTS) noise measurements, effects of different type of defects are studied. The study reveals that the bulk defects have the largest impact on the performance of these devices, although for these highly scaled devices interaction with even few oxide defects can have large impact on the performance. Understanding the contribution by individual defects, as outlined in this letter, is essential to verify the fundamental physics of device operation, and thus imperative for taking the III-V TunnelFETs to the next level.

High-Frequency Performance of Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET

We have developed a self-aligned L_g = 55 nm In_0.53Ga_0.47As MOSFET incorporating metal-organic chemical vapor deposition regrown n⁺⁺ In_0.53Ga_0.47As source and drain regions, which enables a record low on-resistance of 199 Ωμm. The regrowth process includes an InP support layer, which is later removed selectively to the n⁺⁺ contact layer. This process forms a high-frequency compatible device using a low-complexity fabrication scheme. We report on high-frequency measurements showing f_max of 292 GHz and f_t of 244 GHz. These results are accompanied by modeling of the device, which accounts for the frequency response of gate oxide border traps and impact ionization phenomenon found in narrow band gap FETs. The device also shows a high drive current of 2.0 mA/μm and a high extrinsic transconductance of 1.9 mS/μm. These excellent properties are attributed to the use of a gate-last process, which does not include high temperature or dry-etch processes.

GaAsP Nanowires Grown by Aerotaxy

We have grown GaAsP nanowires with high optical and structural quality by Aerotaxy, a new continuous gas phase mass production process to grow III-V semiconductor based nanowires. By varying the PH3/AsH3 ratio and growth temperature, size selected GaAs1-xPx nanowires (80 nm diameter) with pure zinc-blende structure and with direct band gap energies ranging from 1.42 to 1.90 eV (at 300 K), (i.e., 0 ≤ x ≤ 0.43) were grown, which is the energy range needed for creating tandem III-V solar cells on silicon. The phosphorus content in the NWs is shown to be controlled by both growth temperature and input gas phase ratio. The distribution of P in the wires is uniform over the length of the wires and among the wires. This proves the feasibility of growing GaAsP nanowires by Aerotaxy and results indicate that it is a generic process that can be applied to the growth of other III-V semiconductor based ternary nanowires.