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Dive into the research topics where Remi Papon is active.

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Featured researches published by Remi Papon.


Applied Physics Letters | 2015

Structure dependent hydrogen induced etching features of graphene crystals

Amutha Thangaraja; Sachin M. Shinde; Golap Kalita; Remi Papon; Subash Sharma; Riteshkumar Vishwakarma; Kamal P. Sharma; Masaki Tanemura

H2 induced etching of graphene is of significant interest to understand graphene growth process as well as to fabricate nanoribbons and various other structures. Here, we demonstrate the structure dependent H2 induced etching behavior of graphene crystals. We synthesized graphene crystals on electro-polished Cu foil by an atmospheric pressure chemical vapor deposition process, where some of the crystals showed hexagonal shaped snowflake-dendritic morphology. Significant differences in H2 induced etching behavior were observed for the snowflake-dendritic and regular graphene crystals by annealing in a gas mixture of H2 and Ar. The regular graphene crystals were etched anisotropically creating hexagonal holes with pronounced edges, while etching of all the dendritic crystals occurred from the branches of lobs creating symmetrical fractal structures. The etching behavior provides important clue of graphene nucleation and growth as well as their selective etching to fabricate well-defined structures for nanoelectronics.


RSC Advances | 2015

Formation of graphene nanoribbons and Y-junctions by hydrogen induced anisotropic etching

Remi Papon; Subash Sharma; Sachin M. Shinde; Amutha Thangaraja; Golap Kalita; Masaki Tanemura

Metal nanoparticles and H2 induced etching of graphene are of significant interest to synthesise graphene nanoribbons and various other structures with crystallographically defined edges. Here, we demonstrate a controllable H2-induced etching process of graphene crystals to fabricate nanoribbons, and Y-junction structures with pronounced edges. Individual graphene crystals and continuous films were grown on Cu foil by the solid source chemical vapor deposition (CVD) technique. The etching behavior of the synthesized graphene was investigated by annealing at 1000 °C in a gas mixture of H2 and Ar. A highly anisotropic etching creates hexagonal holes, nanoribbons and Y-junction graphene with clear edge structures. The distinct graphene edges of individual ribbons create a 120° angle to form a Y-shaped structure. The finding may be significant for fabricating well-defined graphene structures with controlled edges for electronic device applications as well as creating in-plane heterostructures with other two dimensional (2D) materials.


Applied Physics Letters | 2014

Controlling single and few-layer graphene crystals growth in a solid carbon source based chemical vapor deposition

Remi Papon; Golap Kalita; Subash Sharma; Sachin M. Shinde; Riteshkumar Vishwakarma; Masaki Tanemura

Here, we reveal the growth process of single and few-layer graphene crystals in the solid carbon source based chemical vapor deposition (CVD) technique. Nucleation and growth of graphene crystals on a polycrystalline Cu foil are significantly affected by the injection of carbon atoms with pyrolysis rate of the carbon source. We observe micron length ribbons like growth front as well as saturated growth edges of graphene crystals depending on growth conditions. Controlling the pyrolysis rate of carbon source, monolayer and few-layer crystals and corresponding continuous films are obtained. In a controlled process, we observed growth of large monolayer graphene crystals, which interconnect and merge together to form a continuous film. On the other hand, adlayer growth is observed with an increased pyrolysis rate, resulting few-layer graphene crystal structure and merged continuous film. The understanding of monolayer and few-layer crystals growth in the developed CVD process can be significant to grow graphene with controlled layer numbers.


Nanotechnology | 2016

Influence of oxygen on nitrogen-doped carbon nanofiber growth directly on nichrome foil

Riteshkumar Vishwakarma; Sachin M. Shinde; Mohamad Saufi Rosmi; Chisato Takahashi; Remi Papon; Rakesh D. Mahyavanshi; Yosuke Ishii; Shinji Kawasaki; Golap Kalita; Masaki Tanemura

The synthesis of various nitrogen-doped (N-doped) carbon nanostructures has been significantly explored as an alternative material for energy storage and metal-free catalytic applications. Here, we reveal a direct growth technique of N-doped carbon nanofibers (CNFs) on flexible nichrome (NiCr) foil using melamine as a solid precursor. Highly reactive Cr plays a critical role in the nanofiber growth process on the metal alloy foil in an atmospheric pressure chemical vapor deposition (APCVD) process. Oxidation of Cr occurs in the presence of oxygen impurities, where Ni nanoparticles are formed on the surface and assist the growth of nanofibers. Energy-dispersive x-ray spectroscopy (EDXS) and x-ray photoelectron spectroscopy (XPS) clearly show the transformation process of the NiCr foil surface with annealing in the presence of oxygen impurities. The structural change of NiCr foil assists one-dimensional (1D) CNF growth, rather than the lateral two-dimensional (2D) growth. The incorporation of distinctive graphitic and pyridinic nitrogen in the graphene lattice are observed in the synthesized nanofiber, owing to better nitrogen solubility. Our finding shows an effective approach for the synthesis of highly N-doped carbon nanostructures directly on Cr-based metal alloys for various applications.


RSC Advances | 2014

Synthesis of a three dimensional structure of vertically aligned carbon nanotubes and graphene from a single solid carbon source

Sachin M. Shinde; Golap Kalita; Subash Sharma; Remi Papon; Mohd Zamri Mohd Yusop; Masaki Tanemura

Here, we demonstrate the synthesis of a three dimensional (3D) structure of vertically aligned carbon nanotubes (VACNTs) and graphene from a single solid carbon source. Graphene growth on Cu foil is achieved using solid camphor as the carbon source, whereas the VACNTs are obtained by adding a small amount of ferrocene in the camphor feedstock with minimum contamination from the iron catalyst. Highly dense VACNTs are grown on a transferred graphene film to fabricate the hybrid structure. Raman spectroscopy, optical and scanning electron microcopy studies confirm out of plane growth of the carbon nanotubes (CNTs) from the graphene film. Current–voltage (I–V) measurements are performed to investigate the in plane and out of plane electrical characteristics of the 3D structure. Contact resistance of the VACNTs–graphene is explored taking into account the other resistive contacts in the 3D material system. Achieving a seamless contact of VACNTs–graphene film is significant for low contact resistance and thereby practical device application.


Carbon | 2014

Synthesis of graphene crystals from solid waste plastic by chemical vapor deposition

Subash Sharma; Golap Kalita; Ryo Hirano; Sachin M. Shinde; Remi Papon; Hajime Ohtani; Masaki Tanemura


Surface & Coatings Technology | 2015

Polymer-free graphene transfer on moldable cellulose acetate based paper by hot press technique

Sachin M. Shinde; Golap Kalita; Subash Sharma; Zurita Zulkifli; Remi Papon; Masaki Tanemura


Carbon | 2014

Transformation of chemical vapor deposited individual graphene crystal with oxidation of copper substrate

Golap Kalita; Remi Papon; Subash Sharma; Sachin M. Shinde; Riteshkumar Vishwakarma; Masaki Tanemura


Physica Status Solidi B-basic Solid State Physics | 2017

Optimization of CVD parameters for graphene synthesis through design of experiments

Remi Papon; Christel Pierlot; Subash Sharma; Sachin M. Shinde; Golap Kalita; Masaki Tanemura


Materials Letters | 2014

Synthesis of transfer-free graphene by solid phase reaction process in presence of a carbon diffusion barrier

Muhammed Emre Ayhan; Golap Kalita; Remi Papon; Ryo Hirano; Masaki Tanemura

Collaboration


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Golap Kalita

Nagoya Institute of Technology

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Masaki Tanemura

Nagoya Institute of Technology

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Subash Sharma

Nagoya Institute of Technology

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Sachin M. Shinde

Nagoya Institute of Technology

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Riteshkumar Vishwakarma

Nagoya Institute of Technology

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Kamal P. Sharma

Nagoya Institute of Technology

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Rakesh D. Mahayavanshi

Nagoya Institute of Technology

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Mohamad Saufi Rosmi

Sultan Idris University of Education

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