Riteshkumar Vishwakarma

Opening of triangular hole in triangular-shaped chemical vapor deposited hexagonal boron nitride crystal

In-plane heterostructure of monolayer hexagonal boron nitride (h-BN) and graphene is of great interest for its tunable bandgap and other unique properties. Here, we reveal a H2-induced etching process to introduce triangular hole in triangular-shaped chemical vapor deposited individual h-BN crystal. In this study, we synthesized regular triangular-shaped h-BN crystals with the sizes around 2-10 μm on Cu foil by chemical vapor deposition (CVD). The etching behavior of individual h-BN crystal was investigated by annealing at different temperature in an H2:Ar atmosphere. Annealing at 900 °C, etching of h-BN was observed from crystal edges with no visible etching at the center of individual crystals. While, annealing at a temperature ≥950 °C, highly anisotropic etching was observed, where the etched areas were equilateral triangle-shaped with same orientation as that of original h-BN crystal. The etching process and well-defined triangular hole formation can be significant platform to fabricate planar heterostructure with graphene or other two-dimensional (2D) materials.

Structure dependent hydrogen induced etching features of graphene crystals

H2 induced etching of graphene is of significant interest to understand graphene growth process as well as to fabricate nanoribbons and various other structures. Here, we demonstrate the structure dependent H2 induced etching behavior of graphene crystals. We synthesized graphene crystals on electro-polished Cu foil by an atmospheric pressure chemical vapor deposition process, where some of the crystals showed hexagonal shaped snowflake-dendritic morphology. Significant differences in H2 induced etching behavior were observed for the snowflake-dendritic and regular graphene crystals by annealing in a gas mixture of H2 and Ar. The regular graphene crystals were etched anisotropically creating hexagonal holes with pronounced edges, while etching of all the dendritic crystals occurred from the branches of lobs creating symmetrical fractal structures. The etching behavior provides important clue of graphene nucleation and growth as well as their selective etching to fabricate well-defined structures for nanoelectronics.

Transfer free graphene growth on SiO 2 substrate at 250 °C

Low-temperature growth, as well as the transfer free growth on substrates, is the major concern of graphene research for its practical applications. Here we propose a simple method to achieve the transfer free graphene growth on SiO2 covered Si (SiO2/Si) substrate at 250 °C based on a solid-liquid-solid reaction. The key to this approach is the catalyst metal, which is not popular for graphene growth by chemical vapor deposition. A catalyst metal film of 500 nm thick was deposited onto an amorphous C (50 nm thick) coated SiO2/Si substrate. The sample was then annealed at 250 °C under vacuum condition. Raman spectra measured after the removal of the catalyst by chemical etching showed intense G and 2D peaks together with a small D and intense SiO2 related peaks, confirming the transfer free growth of multilayer graphene on SiO2/Si. The domain size of the graphene confirmed by optical microscope and atomic force microscope was about 5 μm in an average. Thus, this approach will open up a new route for transfer free graphene growth at low temperatures.

Controlling single and few-layer graphene crystals growth in a solid carbon source based chemical vapor deposition

Here, we reveal the growth process of single and few-layer graphene crystals in the solid carbon source based chemical vapor deposition (CVD) technique. Nucleation and growth of graphene crystals on a polycrystalline Cu foil are significantly affected by the injection of carbon atoms with pyrolysis rate of the carbon source. We observe micron length ribbons like growth front as well as saturated growth edges of graphene crystals depending on growth conditions. Controlling the pyrolysis rate of carbon source, monolayer and few-layer crystals and corresponding continuous films are obtained. In a controlled process, we observed growth of large monolayer graphene crystals, which interconnect and merge together to form a continuous film. On the other hand, adlayer growth is observed with an increased pyrolysis rate, resulting few-layer graphene crystal structure and merged continuous film. The understanding of monolayer and few-layer crystals growth in the developed CVD process can be significant to grow graphene with controlled layer numbers.

Influence of oxygen on nitrogen-doped carbon nanofiber growth directly on nichrome foil

The synthesis of various nitrogen-doped (N-doped) carbon nanostructures has been significantly explored as an alternative material for energy storage and metal-free catalytic applications. Here, we reveal a direct growth technique of N-doped carbon nanofibers (CNFs) on flexible nichrome (NiCr) foil using melamine as a solid precursor. Highly reactive Cr plays a critical role in the nanofiber growth process on the metal alloy foil in an atmospheric pressure chemical vapor deposition (APCVD) process. Oxidation of Cr occurs in the presence of oxygen impurities, where Ni nanoparticles are formed on the surface and assist the growth of nanofibers. Energy-dispersive x-ray spectroscopy (EDXS) and x-ray photoelectron spectroscopy (XPS) clearly show the transformation process of the NiCr foil surface with annealing in the presence of oxygen impurities. The structural change of NiCr foil assists one-dimensional (1D) CNF growth, rather than the lateral two-dimensional (2D) growth. The incorporation of distinctive graphitic and pyridinic nitrogen in the graphene lattice are observed in the synthesized nanofiber, owing to better nitrogen solubility. Our finding shows an effective approach for the synthesis of highly N-doped carbon nanostructures directly on Cr-based metal alloys for various applications.

Graphene formation at 150 °C using indium as catalyst

Graphene is generally synthesized at high temperatures. Here we demonstrate a simple method to synthesize graphene at 150 °C. Carbon foils were irradiated with Ar+ ions at 1 keV with a simultaneous supply of catalyst metal without any intentional heating to survey the novel catalyst for graphene growth at low temperature. The ion irradiated surfaces were covered with densely distributed conical structures sometimes with a nanofiber on their respective tips. As revealed by high resolution (HR) transmission electron microscopy (TEM), the conical tips featured few layer graphene only for the newly selected catalyst metal, In, which is rarely used for the chemical vapor deposition (CVD) synthesis of graphene. This observation gives a new insight into the catalytic activity during graphene synthesis. Encouraged by this ion-induced graphene formation, samples of a thin, amorphous carbon film on SiO2 substrates overlaid with this novel catalyst film were prepared, and finally, graphene growth was achieved by simple vacuum heating at 150 °C.