Ren-Jye Shiue

High-Contrast Electrooptic Modulation of a Photonic Crystal Nanocavity by Electrical Gating of Graphene

We demonstrate high-contrast electro-optic modulation of a photonic crystal nanocavity integrated with an electrically gated monolayer graphene. A silicon air-slot nanocavity provides strong overlap between the resonant optical field and graphene. Tuning the Fermi energy of the graphene layer to 0.85 eV enables strong control of its optical conductivity at telecom wavelengths, which allows modulation of cavity reflection in excess of 10 dB for a swing voltage of only 1.5 V. The cavity resonance at 1570 nm is found to undergo a shift in wavelength of nearly 2 nm, together with a 3-fold increase in quality factor. These observations enable a cavity-enhanced determination of graphenes complex optical sheet conductivity at different doping levels. Our simple device demonstrates the feasibility of high-contrast, low-power, and frequency-selective electro-optic modulators in graphene-integrated silicon photonic integrated circuits.

Controlling the spontaneous emission rate of monolayer MoS2 in a photonic crystal nanocavity

We report on controlling the spontaneous emission (SE) rate of a molybdenum disulfide (MoS2) monolayer coupled with a planar photonic crystal (PPC) nanocavity. Spatially resolved photoluminescence (PL) mapping shows strong variations of emission when the MoS2 monolayer is on the PPC cavity, on the PPC lattice, on the air gap, and on the unpatterned gallium phosphide substrate. Polarization dependences of the cavity-coupled MoS2 emission show a more than 5 times stronger extracted PL intensity than the un-coupled emission, which indicates an underlying cavity mode Purcell enhancement of the MoS2 SE rate exceeding a factor of 70.

High-Speed Electro-Optic Modulator Integrated with Graphene-Boron Nitride Heterostructure and Photonic Crystal Nanocavity

Nanoscale and power-efficient electro-optic (EO) modulators are essential components for optical interconnects that are beginning to replace electrical wiring for intra- and interchip communications.1-4 Silicon-based EO modulators show sufficient figures of merits regarding device footprint, speed, power consumption, and modulation depth.5-11 However, the weak electro-optic effect of silicon still sets a technical bottleneck for these devices, motivating the development of modulators based on new materials. Graphene, a two-dimensional carbon allotrope, has emerged as an alternative active material for optoelectronic applications owing to its exceptional optical and electronic properties.12-14 Here, we demonstrate a high-speed graphene electro-optic modulator based on a graphene-boron nitride (BN) heterostructure integrated with a silicon photonic crystal nanocavity. Strongly enhanced light-matter interaction of graphene in a submicron cavity enables efficient electrical tuning of the cavity reflection. We observe a modulation depth of 3.2 dB and a cutoff frequency of 1.2 GHz.

High-Responsivity Graphene-Boron Nitride Photodetector and Autocorrelator in a Silicon Photonic Integrated Circuit

Graphene and other two-dimensional (2D) materials have emerged as promising materials for broadband and ultrafast photodetection and optical modulation. These optoelectronic capabilities can augment complementary metal-oxide-semiconductor (CMOS) devices for high-speed and low-power optical interconnects. Here, we demonstrate an on-chip ultrafast photodetector based on a two-dimensional heterostructure consisting of high-quality graphene encapsulated in hexagonal boron nitride. Coupled to the optical mode of a silicon waveguide, this 2D heterostructure-based photodetector exhibits a maximum responsivity of 0.36 A/W and high-speed operation with a 3 dB cutoff at 42 GHz. From photocurrent measurements as a function of the top-gate and source-drain voltages, we conclude that the photoresponse is consistent with hot electron mediated effects. At moderate peak powers above 50 mW, we observe a saturating photocurrent consistent with the mechanisms of electron-phonon supercollision cooling. This nonlinear photoresponse enables optical on-chip autocorrelation measurements with picosecond-scale timing resolution and exceptionally low peak powers.

Enhanced photodetection in graphene-integrated photonic crystal cavity

We demonstrate the controlled enhancement of photoresponsivity in a graphene photodetector by coupling to slow light modes in a long photonic crystal linear defect cavity. Near the Brillouin zone (BZ) boundary, spectral coupling of multiple cavity modes results in broad-band photocurrent enhancement from 1530 nm to 1540 nm. Away from the BZ boundary, individual cavity resonances enhance the photocurrent eight-fold in narrow resonant peaks. Optimization of the photocurrent via critical coupling of the incident field with the graphene-cavity system is discussed. The enhanced photocurrent demonstrates the feasibility of a wavelength-scale graphene photodetector for efficient photodetection with high spectral selectivity and broadband response.

Controlled Light–Matter Interaction in Graphene Electrooptic Devices Using Nanophotonic Cavities and Waveguides

Nanophotonic devices, such as waveguides and cavities, can strongly enhance the interaction of light with graphene. We describe techniques for enhancing the interaction of photons with graphene using chip-integrated nanophotonic devices. Transferring single-layer graphene onto planar photonic crystal nanocavities enables a spectrally selective, order-of-magnitude enhancement of optical coupling with graphene, as shown by spectroscopic studies of cavity modes in visible and infrared spectral ranges. We observed dramatically cavity-enhanced absorption, hot photoluminescence emission, and Raman scattering of the monolayer graphene. We also described a broad-spectrum enhancement of the light-matter interaction by coupling graphene with a bus waveguide on a silicon-on-insulator photonic integrated circuit, which enables a 6.2-dB transmission attenuation due to the graphene absorption over a waveguide length of 70 μm. By electrically gating the graphene monolayer coupled with a planar photonic crystal nanocavity, electrooptic modulation of the cavity reflection was possible with a contrast in excess of 10 dB. Moreover, a novel modulator device based on the cavity-coupled graphene-boron nitride-graphene capacitor was fabricated, showing a modulation speed up to 0.57 GHz. These results indicate the applications of graphene-cavity devices in high-speed and high-contrast modulators with low energy consumption. The integration of graphene with nanophotonic architectures promises a new generation of compact, energy-efficient, and ultrafast electrooptic graphene devices for on-chip optical communications.

High-resolution optical spectroscopy using multimode interference in a compact tapered fibre.

Optical spectroscopy is a fundamental tool in numerous areas of science and technology. Much effort has focused on miniaturizing spectrometers, but thus far at the cost of spectral resolution and broad operating range. Here we describe a compact spectrometer that achieves both high spectral resolution and broad bandwidth. The device relies on imaging multimode interference from leaky modes along a multimode tapered optical fibre, resulting in spectrally distinguishable spatial patterns over a wide range of wavelengths from 500 to 1,600 nm. This tapered fibre multimode interference spectrometer achieves a spectral resolution down to 40 pm in the visible spectrum and 10 pm in the near-infrared spectrum (corresponding to resolving powers of 10(4)-10(5)). Multimode interference spectroscopy is suitable in a variety of device geometries, including planar waveguides in a broad range of transparent materials.

Chalcogenide glass-on-graphene photonics

Two-dimensional (2D) materials are of tremendous interest to integrated photonics, given their singular optical characteristics spanning light emission, modulation, saturable absorption and nonlinear optics. To harness their optical properties, these atomically thin materials are usually attached onto prefabricated devices via a transfer process. Here, we present a new route for 2D material integration with planar photonics. Central to this approach is the use of chalcogenide glass, a multifunctional material that can be directly deposited and patterned on a wide variety of 2D materials and can simultaneously function as the light-guiding medium, a gate dielectric and a passivation layer for 2D materials. Besides achieving improved fabrication yield and throughput compared with the traditional transfer process, our technique also enables unconventional multilayer device geometries optimally designed for enhancing light–matter interactions in the 2D layers. Capitalizing on this facile integration method, we demonstrate a series of high-performance glass-on-graphene devices including ultra-broadband on-chip polarizers, energy-efficient thermo-optic switches, as well as graphene-based mid-infrared waveguide-integrated photodetectors and modulators.Exploiting the peculiar properties of graphene, a series of high-performance glass-on-graphene devices, such as polarizers, thermo-optic switches and mid-infrared waveguide-integrated photodetectors and modulators are realized.

Waveguide-integrated photonic crystal spectrometer with camera readout

We demonstrate an infrared spectrometer based on waveguide-coupled nanocavity filters in a planar photonic crystal structure. The input light is coupled into the waveguide, from which spectral components are dropped into the cavities and radiated off-chip for detection on a commercial InGaAs camera. The spectrometer has a footprint of only 60 μm by 8 μm. The spectral resolution is about 1 nm in the operation bandwidth of 1522–1545 nm. By substituting the membrane material and structure parameters, this design can be easily extended into the visible regime and developed for a variety of highly efficient, miniature photonic applications.

Active 2D materials for on-chip nanophotonics and quantum optics

Abstract Two-dimensional materials have emerged as promising candidates to augment existing optical networks for metrology, sensing, and telecommunication, both in the classical and quantum mechanical regimes. Here, we review the development of several on-chip photonic components ranging from electro-optic modulators, photodetectors, bolometers, and light sources that are essential building blocks for a fully integrated nanophotonic and quantum photonic circuit.