Dmitri Efetov

Controlling electron-phonon interactions in graphene at ultrahigh carrier densities.

We report on the temperature dependent electron transport in graphene at different carrier densities n. Employing an electrolytic gate, we demonstrate that n can be adjusted up to 4 × 10(14)  cm(-2) for both electrons and holes. The measured sample resistivity ρ increases linearly with temperature T in the high temperature limit, indicating that a quasiclassical phonon distribution is responsible for the electron scattering. As T decreases, the resistivity decreases more rapidly following ρ(T) ∼ T(4). This low temperature behavior can be described by a Bloch-Grüneisen model taking into account the quantum distribution of the two-dimensional acoustic phonons in graphene. We map out the density dependence of the characteristic temperature Θ(BG) defining the crossover between the two distinct regimes, and show that, for all n, ρ(T) scales as a universal function of the normalized temperature T/Θ(BG).

Electronic Transport and Quantum Hall Effect in Bipolar Graphene p-n-p Junctions

We have developed a device fabrication process to pattern graphene into nanostructures of arbitrary shape and control their electronic properties using local electrostatic gates. Electronic transport measurements have been used to characterize locally gated bipolar graphene p-n-p junctions. We observe a series of fractional quantum Hall conductance plateaus at high magnetic fields as the local charge density is varied in the p and n regions. These fractional plateaus, originating from chiral edge states equilibration at the p-n interfaces, exhibit sensitivity to interedge backscattering which is found to be strong for some of the plateaus and much weaker for other plateaus. We use this effect to explore the role of backscattering and estimate disorder strength in our graphene devices.

Electronic transport in locally gated graphene nanoconstrictions

We have developed the combination of an etching and deposition technique that enables the fabrication of locally gated graphene nanostructures of arbitrary design. Employing this method, we have fabricated graphene nanoconstrictions with local tunable transmission and characterized their electronic properties. An order of magnitude enhanced gate efficiency is achieved adopting the local gate geometry with thin dielectric gate oxide. A complete turn off of the device is demonstrated as a function of the local gate voltage. Such strong suppression of device conductance was found to be due to both quantum confinement and Coulomb blockade effects in the constricted graphene nanostructures.

A MoTe 2 -based light-emitting diode and photodetector for silicon photonic integrated circuits

One of the current challenges in photonics is developing high-speed, power-efficient, chip-integrated optical communications devices to address the interconnects bottleneck in high-speed computing systems. Silicon photonics has emerged as a leading architecture, in part because of the promise that many components, such as waveguides, couplers, interferometers and modulators, could be directly integrated on silicon-based processors. However, light sources and photodetectors present ongoing challenges. Common approaches for light sources include one or few off-chip or wafer-bonded lasers based on III-V materials, but recent system architecture studies show advantages for the use of many directly modulated light sources positioned at the transmitter location. The most advanced photodetectors in the silicon photonic process are based on germanium, but this requires additional germanium growth, which increases the system cost. The emerging two-dimensional transition-metal dichalcogenides (TMDs) offer a path for optical interconnect components that can be integrated with silicon photonics and complementary metal-oxide-semiconductors (CMOS) processing by back-end-of-the-line steps. Here, we demonstrate a silicon waveguide-integrated light source and photodetector based on a p-n junction of bilayer MoTe2, a TMD semiconductor with an infrared bandgap. This state-of-the-art fabrication technology provides new opportunities for integrated optoelectronic systems.

Li Intercalation into Graphite: Direct Optical Imaging and Cahn-Hilliard Reaction Dynamics.

Lithium intercalation into graphite is a critical process in energy storage technology. Studies of Li intercalation kinetics have proved challenging due to structural and phase complexity, and sample heterogeneity. Here we report direct time- and space-resolved, all-optical measurement of Li intercalation. We use a single crystal graphite electrode with lithographically defined disc geometry. All-optical, Raman and reflectance measurements distinguish the intrinsic intercalation process from side reactions, and provide new insight into the microscopic intercalation process. The recently proposed Cahn-Hilliard reaction (CHR) theory quantitatively captures the observed phase front spatial patterns and dynamics, using a two-layer free-energy model with novel, generalized Butler-Volmer kinetics. This approach unites Cahn-Hilliard and electrochemical kinetics, using a thermodynamically consistent description of the Li injection reaction at the crystal edge that involves a cooperative opening of graphene planes. The excellent agreement between experiment and theory presented here, with single-crystal resolution, provides strong support for the CHR theory of solid-state reactions.

Inducing superconducting correlation in quantum Hall edge states

The quantum Hall (QH) effect supports a set of chiral edge states at the boundary of a two-dimensional system. A superconductor (SC) contacting these states can provide correlations of the quasiparticles in the dissipationless edge states. Here we fabricated highly transparent and nanometre-scale SC junctions to graphene. We demonstrate that the QH edge states can couple via superconducting correlations through the SC electrode narrower than the superconducting coherence length. We observe that the chemical potential of the edge state exhibits a sign reversal across the SC electrode. This provides direct evidence of conversion of the incoming electron to the outgoing hole along the chiral edge state, termed crossed Andreev conversion (CAC). We show that CAC can successfully describe the temperature, bias and SC electrode width dependences. This hybrid SC/QH system could provide a novel route to create isolated non-Abelian anyonic zero modes, in resonance with the chiral edge states. A superconductor–graphene junction is shown to exhibit the quantum Hall effect, with the chemical potential of the edge state displaying a sign reversal. Such a system could provide a platform for observing isolated non-Abelian anyonic zero modes.

Multiband transport in bilayer graphene at high carrier densities

We report a multiband transport study of bilayer graphene at high carrier densities. Employing a poly(ethylene)oxide-CsClO

Graphene-Based Josephson-Junction Single-Photon Detector

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Ambipolar transport and magneto-resistance crossover in a Mott insulator, Sr2IrO4

solid polymer electrolyte gate we demonstrate the filling of the high-energy subbands in bilayer graphene samples at carrier densities

Controlled Electrochemical Intercalation of Graphene/h-BN van der Waals Heterostructures

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