Renu W. Dave

Magnetoresistive random access memory using magnetic tunnel junctions

Magnetoresistive random access memory (MRAM) technology combines a spintronic device with standard silicon-based microelectronics to obtain a combination of attributes not found in any other memory technology. Key attributes of MRAM technology are nonvolatility and unlimited read and write endurance. Magnetic tunnel junction (MTJ) devices have several advantages over other magnetoresistive devices for use in MRAM cells, such as a large signal for the read operation and a resistance that can be tailored to the circuit. Due to these attributes, MTJ MRAM can operate at high speed and is expected to have competitive densities when commercialized. In this paper, we review our recent progress in the development of MTJ-MRAM technology. We describe how the memory operates, including significant aspects of reading, writing, and integration of the magnetic material with CMOS, which enabled our recent demonstration of a 1-Mbit memory chip. Important memory attributes are compared between MRAM and other memory technologies.

A 4-Mb toggle MRAM based on a novel bit and switching method

A 4-Mb magnetoresistive random access memory (MRAM) with a novel magnetic bit cell and toggle switching mode is presented. The circuit was designed in a five level metal, 0.18-mum complementary metal-oxide-semiconductor process with a bit cell size of 1.55 mum2. The new bit cell uses a balanced synthetic antiferromagnetic free layer and a phased write pulse sequence to provide robust switching performance with immunity from half-select disturbs. This switching mode greatly improves the operational performance of the MRAM as compared to conventional MRAM. A detailed description of this 4-Mb toggle MRAM is presented

The science and technology of magnetoresistive tunneling memory

Rapid advances in portable communication and computing systems are creating an increasing demand for nonvolatile random access memory that is both high-density and highspeed. Existing solid-state technologies are unable to provide all of the needed attributes in a single memory solution. Therefore, a number of different memories are currently being used to achieve the multiple functionality requirements, often compromising performance and adding cost to the system. A new technology, magnetoresistive random access memory (MRAM) based on magnetoresistive tunneling, has the potential to replace these memories in various systems with a single, universal solution. The key attributes of MRAM are nonvolatility, high-speed operation. and unlimited read and write endurance. This technology is enabled by the ability to deposit high-quality, nanometer scale tunneling barriers that display enhanced magnetoresistive response. In this article we describe several fundamental technical and scientific aspects of MRAM with emphasis on recent accomplishments that enabled our successful demonstration of a 256-Kb memory chip.

MgO-Based Tunnel Junction Material for High-Speed Toggle Magnetic Random Access Memory

We report the first demonstration of a magnetoresistive random access memory (MRAM) circuit incorporating MgO-based magnetic tunnel junction (MTJ) material for higher performance. We compare our results to those of AlOx-based devices, and we discuss the MTJ process optimization and material changes that made the demonstration possible.We present data on key MTJ material attributes for different oxidation processes and free-layer alloys, including resistance distributions, bias dependence, free-layer magnetic properties, interlayer coupling, breakdown voltage, and thermal endurance. A tunneling magnetoresistance (TMR) greater than 230% was achieved with CoFeB free layers and greater than 85% with NiFe free layers. Although the TMR with NiFe is at the low end of our MgO comparison, even this MTJ material enables faster access times, since its TMR is almost double that of a similar structure with an AlOx barrier. Bit-to-bit resistance distributions are somewhat wider for MgO barriers, with sigma about 1.5% compared to about 0.9% for AlOx. The read access time of our 4 Mb toggle MRAM circuit was reduced from 21 ns with AlOx to a circuit-limited 17 ns with MgO.

Angular dependence of spin-transfer switching in a magnetic nanostructure

We measured switching of a thin film nanomagnet driven by spin-polarized current in giant magnetoresistance spin valves as small as 50 nm×100 nm. Spin-transfer reversal is observed in both dc current and magnetic field sweeps, with a switching current of ∼5 mA, for example, for a bit with ∼900 Oe switching field in zero current. We studied the dependence of spin-transfer switching on the relative angle φ between the layer magnetizations by using a magnetic field to orient the magnetization of a bulk magnetic layer at an angle to a patterned layer held in place by shape anisotropy. The critical current is a minimum for collinear magnetizations and diverges as 1/|cos φ| as φ increases to 90°, consistent with switching current calculations using the Slonczewski spin-transfer torque model.

Tunneling criteria for magnetic-insulator-magnetic structures

The bias and temperature dependent resistance and magnetoresistance of magnetic tunnel junctions with and without intentional shorts through the insulating barrier were studied. Based on the experimental results, a set of quality criteria was formulated that enables the identification of barrier shorts. While the temperature and bias dependencies of the junction resistance and of the fitted barrier parameters are very sensitive to the presence of such shorts, the same dependencies of the magnetoresistance are surprisingly insensitive. Finally, junctions with a shorted barrier exhibit a dramatic increase in noise level and junction instability.

Fundamentals of MRAM Technology

Developments in portable communication and computing systems are creating a growing demand for nonvolatile random access memory that is dense and fast. None of the existing solid-state memories can provide all the needed attributes in a single memory solution. Therefore, to achieve the required multiple functionality requirements, a number of different memories are being used while compromising performance and adding cost to the system. Magnetoresistive Random Access Memory (MRAM) has the potential to replace these memories in various systems with a single, universal memory solution. Key attributes of MRAM technology are nonvolatility and unlimited read and write endurance. In addition, MRAM can operate at high-speed and is expected to have competitive densities. In this paper we describe several fundamental technical and scientific aspects of MRAM with emphasis on recent accomplishments that enabled our successful demonstration of a 256 kbit memory chip.

Criteria for ferromagnetic–insulator–ferromagnetic tunneling

The Rowell criteria, commonly used to identify tunneling in magnetic tunnel junctions (MTJ), are scrutinized. While neither the exponential-thickness dependence of the conductivity nor fits of non-linear transport data are found to be reliable tunneling criteria, the temperature-dependent conductivity does remain a solid criterion. Based on experimental studies of the bias and temperature-dependent resistance and magnetoresistance of MTJs, with and without shorted barriers, a new set of criteria is formulated. r 2002 Elsevier Science B.V. All rights reserved.

Exchange coupling control and thermal endurance of synthetic antiferromagnet structures for MRAM

Synthetic antiferromagnet (SAF) structures are a key element of TMR and GMR read heads and MRAM devices. Control of the SAF coupling strength and thermal endurance are key issues for these technologies. We find that the coupling strength increases with stronger crystalline texture in polycrystalline NiFe SAFs, and, surprisingly, we observe a strong dependence on seed layer in amorphous CoFeB SAFs. We also have developed an analysis method for evaluating thermal endurance of SAFs and show that failure of the SAF can be modeled as a thermally activated diffusion process. The analysis is used to predict the time to failure at any temperature, thus allowing accelerated failure analysis for SAF-based devices. The stability improves dramatically with increasing Ru spacer thickness. The time to failure for typical NiFe SAFs was found to be >10 years at 120/spl deg/C.

High speed toggle MRAM with mgO-based tunnel junctions

We report here the first integration of a new generation of high magnetoresistance-ratio (MR) magnetic tunnel junction (MTJ) material with a 90 nm CMOS front-end logic process. This new material, with MgO tunnel barriers, significantly increased the read signal over standard AlOx-based material. The 90 nm CMOS test vehicle has 8 kb arrays of 1T1MTJ memory cells with two orthogonal program lines oriented at 45deg from the bit easy axis for toggle switching. Read and toggle-write operations are demonstrated