Riccardo Di Pietro

Moderate doping leads to high performance of semiconductor/insulator polymer blend transistors

Polymer transistors are being intensively developed for next-generation flexible electronics. Blends comprising a small amount of semiconducting polymer mixed into an insulating polymer matrix have simultaneously shown superior performance and environmental stability in organic field-effect transistors compared with the neat semiconductor. Here we show that such blends actually perform very poorly in the undoped state, and that mobility and on/off ratio are improved dramatically upon moderate doping. Structural investigations show that these blend layers feature nanometre-scale semiconductor domains and a vertical composition gradient. This particular morphology enables a quasi three-dimensional spatial distribution of semiconductor pathways within the insulating matrix, in which charge accumulation and depletion via a gate bias is substantially different from neat semiconductor, and where high on-current and low off-current are simultaneously realized in the stable doped state. Adding only 5 wt% of a semiconducting polymer to a polystyrene matrix, we realized an environmentally stable inverter with gain up to 60.

Spectroscopic Investigation of Oxygen- and Water-Induced Electron Trapping and Charge Transport Instabilities in n-type Polymer Semiconductors

We present an optical spectroscopy study on the role of oxygen and water in electron trapping and storage/bias-stress degradation of n-type polymer field-effect transistors based on one of the most widely studied electron transporting conjugated polymers, poly{[N,N9-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,59-(2,29-bisthiophene)} (P(NDI2OD-T2)). We combine results obtained from charge accumulation spectroscopy, which allow optical quantification of the concentration of mobile and trapped charges in the polymer film, with electrical characterization of P(NDI2OD-T2) organic field-effect transistors to study the mechanism for storage and bias-stress degradation upon exposure to dry air/oxygen and humid nitrogen/water environments, thus separating the effect of the two molecules and determining the nature of their interaction with the polymer. We find that the stability upon oxygen exposure is limited by an interaction between the neutral polymer and molecular oxygen leading to a reduction in electron mobility in the bulk of the semiconductor. We use density functional theory quantum chemical calculations to ascribe the drop in mobility to the formation of a shallow, localized, oxygen-induced trap level, 0.34 eV below the delocalized lowest unoccupied molecular orbital of P(NDI2OD-T2). In contrast, the stability of the polymer anion against water is limited by two competing reactions, one involving the electrochemical oxidation of the polymer anion by water without degradation of the polymer and the other involving a radical anion-catalyzed chemical reaction of the polymer with water, in which the electron can be recycled and lead to further degradation reactions, such that a significant portion of the film is degraded after prolonged bias stressing. Using Raman spectroscopy, we have been able to ascribe this to a chemical interaction of water with the naphthalene diimide unit of the polymer. The degradation mechanisms identified here should be considered to explain electron trapping in other rylene diimides and possibly in other classes of conjugated polymers as well.

High Resolution Optical Spectroscopy of Air‐Induced Electrical Instabilities in n‐type Polymer Semiconductors

We use high-resolution charge-accumulation optical spectroscopy to measure charge accumulation in the channel of an n-type organic field-effect transistor. We monitor the degradation of device performance in air, correlate the onset voltage shift with the reduction of charge accumulated in the polymer semiconductor, and explain the results in view of the redox reaction between the polymer, water and oxygen in the accumulation layer.

High Conductivity in Molecularly p‐Doped Diketopyrrolopyrrole‐Based Polymer: The Impact of a High Dopant Strength and Good Structural Order

[3]-Radialene-based dopant CN6-CP studied herein, with its reduction potential of +0.8 versus Fc/Fc+ and the lowest unoccupied molecular orbital level of -5.87 eV, is the strongest molecular p-dopant reported in the open literature, so far. The efficient p-doping of the donor-acceptor dithienyl-diketopyrrolopyrrole-based copolymer having the highest unoccupied molecular orbital level of -5.49 eV is achieved. The doped films exhibit electrical conductivities up to 70 S cm(-1) .

Simultaneous extraction of charge density dependent mobility and variable contact resistance from thin film transistors

A model for the extraction of the charge density dependent mobility and variable contact resistance in thin film transistors is proposed by performing a full derivation of the current-voltage characteristics both in the linear and saturation regime of operation. The calculated values are validated against the ones obtained from direct experimental methods. This approach allows unambiguous determination of gate voltage dependent contact and channel resistance from the analysis of a single device. It solves the inconsistencies in the commonly accepted mobility extraction methods and provides additional possibilities for the analysis of the injection and transport processes in semiconducting materials.

The impact of molecular weight, air exposure and molecular doping on the charge transport properties and electronic defects in dithienyl-diketopyrrolopyrrole-thieno[3,2-b]thiophene copolymers

We performed an in-depth study of high molecular weight poly[3,6-(dithiophene-2-yl)-2,5-di(2-octyldodecyl)-pyrrolo[3,4-c]pyrrole-1,4-dione-alt-thieno[3,2-b]thiophene] P(DPP2OD-TT) synthesized through the Stille coupling polycondensation in order to understand the correlation between molecular weight, processing conditions and charge transport. We observed a rapid increase in its aggregation in solution with increasing molecular weight which strongly limits the solubility and processability for weight average molecular weights beyond 200 kg mol−1. This results in severe limitation in the charge transport properties of the polymer. We further observe the presence of bulk electronic defects in all different polymer batches that severely limit the current flow and manifest themselves in organic field effect transistors as apparent charge density dependence of the mobility. These defects are passivated by exposure to an ambient atmosphere, as confirmed by an increase in current and mobility that is no more charge density dependent. This is further confirmed by the result of chemical doping using 2,2-(perfluoronaphthalene-2,6-diylidene)dimalononitrile, F6TCNNQ, which leads to the filling of the trap states and a higher charge density independent mobility of up to 1 cm2 V−1 s−1.

Analysis of charge injection and contact resistance as a function of electrode surface treatment in ambipolar polymer transistors

Ambipolar organic field-effect transistors (OFETs) have both of hole and electron enhancements in charge transport. The characteristics of conjugated diketopyrrolopyrrole ambipolar OFETs depend on the metal-contact surface treatment for charge injection. To investigate the charge-injection characteristics of ambipolar transistors, these devices are processed via various types of self-assembled monolayer treatments and annealing. We conclude that treatment by the self-assembled monolayer 1-decanethiol gives the best enhancement of electron charge injection at both 100 and 300 °C annealing temperature. In addition, the contact resistance is calculated by using two methods: One is the gated four-point probe (gFPP) method that gives the voltage drop between channels, and the other is the simultaneous contact resistance extraction method, which extracts the contact resistance from the general transfer curve. We confirm that the gFPP method and the simultaneous extraction method give similar contact resistance, which means that we can extract contact resistance from the general transfer curve without any special contact pattern. Based on these characteristics of ambipolar p- and n-type transistors, we fabricate inverter devices with only one active layer.

Electrical nucleation and detection of single 360° homochiral Néel domain walls measured using the anomalous Nernst effect

Using a thermoelectric measurement, we demonstrate the nucleation and detection of a single 360° homochiral Neel domain wall (DW), formed by an independently nucleated pair of 180° Neel DWs having the same helicity in a perpendicular magnetic anisotropy track. The DW formation is governed by strong interfacial Dzyaloshinskii-Moriya interaction (DMI) and detected at room temperature using the anomalous Nernst effect (ANE). A large DMI can be generated at an interface where the symmetry is broken between a material having a large spin-orbit coupling and a thin ferromagnetic layer. The ANE voltage, V ANE ∝ ∇ T × M, is sensitive to the magnitude of the out-of-plane magnetization M through a confined in-plane temperature gradient ∇T and allows for the direct thermoelectrical detection of the DW position with nanoscale accuracy along the track. Here, we present evidence that independently nucleated pairs of 180° Neel DWs in microwire devices can be brought together by an applied magnetic field to form a 360° homochiral Neel DW. Subsequently, we show that a strong magnetic field needs to be applied in order to annihilate the 360° DW due to the strong interfacial DMI in our Pt/Co(0.6nm)/AlOx multilayers. In addition to enabling a high magnetic storage and data transfer rate with low power consumption in novel computational and storage devices, such DWs facilitate a reduction in bit size down to a few nanometers with metastability.Using a thermoelectric measurement, we demonstrate the nucleation and detection of a single 360° homochiral Neel domain wall (DW), formed by an independently nucleated pair of 180° Neel DWs having the same helicity in a perpendicular magnetic anisotropy track. The DW formation is governed by strong interfacial Dzyaloshinskii-Moriya interaction (DMI) and detected at room temperature using the anomalous Nernst effect (ANE). A large DMI can be generated at an interface where the symmetry is broken between a material having a large spin-orbit coupling and a thin ferromagnetic layer. The ANE voltage, V ANE ∝ ∇ T × M, is sensitive to the magnitude of the out-of-plane magnetization M through a confined in-plane temperature gradient ∇T and allows for the direct thermoelectrical detection of the DW position with nanoscale accuracy along the track. Here, we present evidence that independently nucleated pairs of 180° Neel DWs in microwire devices can be brought together by an applied magnetic field to form a 36...