Richard David Goldberg

Optimised Charging Performance On Quantum X Ion Implanters

A key parameter in the optimisation of CMOS device yield is the minimisation of charging‐induced damage and/or breakdown of the gate dielectric material during ion implantation. In typical ion beams used for transistor doping applications, beam potentials can charge up the wafer surface if not controlled, and hence this potential must be neutralised to avoid damage to devices. MOS capacitor TEG (Test Element Group) wafers are an industry standard metric for determining the charging performance of ion implanters. By optimising the performance of the High Density Plasma Flood System (HDPFS) of the Applied Materials Quantum X ion implanter, TEG device yields of >90% at antenna ratios of 1E5:1 for a gate dielectric thickness of 3.5 nm on 300 mm wafers have been demonstrated.

Applied Quantum X Implant System: Technology Enhancements to Enable Production‐Worthy Performance at the 45 nm Node

Mechanical scanning of the wafer in 2 dimensions is one approach that has been used to achieve single wafer processing for high current ion implantation. This approach simplifies the beamline design, compared to scanned beam or ribbon beam architectures, but has required a number of new technologies and methods in the scanner hardware and in dosimetry control. The Applied® Quantum X Implant system was designed to incorporate these new technologies, and has achieved the process performance and low energy productivity required for advanced junction formation at the 65 nm technology node. Since its introduction, extensive qualification and development work has been carried out, to extend its capability to the next technology generation. A number of further innovations and improvements to the beamline and platform have been developed, extending its throughput and process control capability to be production‐worthy at 45 nm.This paper will review the process control challenges associated with the 2d mechanical ...

Quantum IIatrade; : low energy beamline innovations for increased manufacturing productivity

An investigation into the processes that limit the performance of ion implanters at low energies (≤10keV) is described. Experimental results, obtained using an indirectly-heated cathode (IHC) ion source and tetrode extraction system are used to illustrate how the transmission of low energy ions can be optimised by matching the beam emittance produced by a specific beamline element to the acceptance of the subsequent beamline component. Emittance measurements on a 5keV BxFy (i.e. B, F, BF, BF2) beam immediately downstream of the extraction electrodes demonstrated that, for a standard source, the beam quality deteriorates dramatically when the it is tuned to maximise the cracking of molecular feed gases. Incorporation of a slotted cathode was shown to overcome this problem and resulted in enhanced beam transmission through the extraction lens. Quality measurements on a set of 1keV BxFy beams were also undertaken to investigate the effects of extraction lens voltages and electrode position on their current density profiles. A 100μm slit was used to section the beams and the transmitted beamlets were profiled to identify aberrations introduced by the extraction lens. By distorting the emittance diagram these aberrations lead to the requirement of a larger acceptance in the subsequent beamline and resulted in increased beam loss. Based on these finding a series of design modifications were made to Applied Materials QuantumLEAP™ implant system. Performance statistics from the resulting Quantum II™ ion implanter show a 30-50% improvement over its predecessor in beam transmission efficiency and, as a result, low energy ion currents.